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公开(公告)号：US10769320B2
公开(公告)日：2020-09-08
申请号：US14107850
申请日：2013-12-16
IPC分类号： G06F30/20 , G03F7/20 , G06F30/398
摘要： Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.
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公开(公告)号：US10580673B2
公开(公告)日：2020-03-03
申请号：US16198658
申请日：2018-11-21
摘要： In some embodiments, a first plurality of electron-microscope images for respective instances of a semiconductor structure is obtained from a first source. The electron-microscope images of the first plurality show different values of one or more semiconductor-fabrication parameters. A model is trained that specifies a relationship between the first plurality of electron-microscope images and the values of the one or more semiconductor-fabrication parameters. A second plurality of electron-microscope images for respective instances of the semiconductor structure on one or more semiconductor wafers is collected. The one or more semiconductor wafers are distinct from the first source. Values of the one or more semiconductor-fabrication parameters for the second plurality of electron-microscope images are predicted using the model.
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公开(公告)号：US10215559B2
公开(公告)日：2019-02-26
申请号：US14879534
申请日：2015-10-09
摘要： Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a primary, multiple patterned target is measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target and an assist target are measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target is measured at different process steps and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model.
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公开(公告)号：US20190049602A1
公开(公告)日：2019-02-14
申请号：US16101521
申请日：2018-08-13
摘要： Methods and systems for more efficient X-Ray scatterometry measurements of on-device structures are presented herein. X-Ray scatterometry measurements of one or more structures over a measurement area includes a decomposition of the one or more structures into a plurality of sub-structures, a decomposition of the measurement area into a plurality of sub-areas, or both. The decomposed structures, measurement areas, or both, are independently simulated. The scattering contributions of each of the independently simulated decomposed structures are combined to simulate the actual scattering of the measured structures within the measurement area. In a further aspect, measured intensities and modelled intensities including one or more incidental structures are employed to perform measurement of structures of interest. In other further aspects, measurement decomposition is employed to train a measurement model and to optimize a measurement recipe for a particular measurement application.
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公开(公告)号：US10062157B2
公开(公告)日：2018-08-28
申请号：US15342432
申请日：2016-11-03
发明人： Stilian Ivanov Pandev , Alexander Kuznetsov , Gregory R. Brady , Andrei V. Shchegrov , Noam Sapiens , John J. Hench
CPC分类号： G06T7/0004 , G01B2210/56 , G01N21/211 , G01N21/255 , G01N21/84 , G01N21/8422 , G01N2201/06113 , G03F7/70625 , G03F7/70633 , G06T7/60 , G06T2207/10004 , G06T2207/30148
摘要： Disclosed are apparatus and methods for determining a structure or process parameter value of a target of interest on a semiconductor wafer. A plurality of collection patterns are defined for a spatial light beam controller positioned at a pupil image plane of a metrology tool. For each collection pattern, a signal is collected from a sensor of the metrology tool, and each collected signal represents a combination of a plurality of signals that the spatial light beam controller samples, using each collection pattern, from a pupil image of the target of interest. The collection patterns are selected so that the pupil image is reconstructable based on the collection patterns and their corresponding collection signals. The collected signal for each of the collection patterns is analyzed to determine a structure or process parameter value for the target of interest.
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公开(公告)号：US09255877B2
公开(公告)日：2016-02-09
申请号：US14278224
申请日：2014-05-15
发明人： Andrei Veldman , Andrei V. Shchegrov , Gregory Brady , Thaddeus Gerard Dziura , Stilian Ivanov Pandev , Alexander Kuznetsov
CPC分类号： G01N21/211 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/9501 , G01N2021/213
摘要： Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are predetermined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.
摘要翻译： 本文介绍了用于评估测量系统通过给定过程窗口跟踪测量参数的能力的方法和系统。 性能评估包括随机扰动，系统扰动或两者，以有效表征模型误差，计量系统缺陷和校准误差等的影响。 在一些示例中，度量目标参数被预先确定为实验设计（DOE）的一部分。 将度量目标参数的估计值与已知的DOE参数值进行比较，以确定特定测量的跟踪能力。 在一些示例中，测量模型由主要组件参数化，以减少测量模型的自由度数。 此外，提出了用于优化用于受过程变化的度量应用的半导体测量系统的测量能力的示例性方法和系统。
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7.发明授权Optical metrology of periodic targets in presence of multiple diffraction orders 有权存在多个衍射级的周期性目标的光学计量学公开(公告)号：US09243886B1
公开(公告)日：2016-01-26
申请号：US13924204
申请日：2013-06-21
IPC分类号： G01B9/02 , G01N21/47 , G01N21/956
CPC分类号： G01N21/956 , G01B2210/56 , G01N21/4785 , G01N21/4788 , G01N21/9501 , G01N21/95623 , G03F7/70625 , H01L22/12
摘要： One or more non-zero diffraction orders are selected, and these selected one or more zero or non-zero diffraction orders are selected for eliminating or obtaining corresponding zero or non-zero diffraction order terms or interference term from measurements from a periodic target using an optical metrology tool. The periodic target has a pitch, and the measurements contain a zero diffraction order and one or more non-zero diffraction order terms. Using the optical metrology tool, an incident beam is directed to positions on the target, and the measurements are obtained from the target in response to the incident beam. The measurements are processed to eliminate or obtain each zero or non-zero diffraction order term or interference term associated with each selected zero or non-zero diffraction order, resulting in a processed metrology signal. The positions are shifted from each other so as to cause the zero or non-zero diffraction order term or interference term corresponding to each selected zero or non-zero diffraction order to be eliminated or obtained.
摘要翻译： 选择一个或多个非零衍射级，并且选择这些选择的一个或多个零或非零衍射级，以从消除或获得来自周期性靶的测量的相应的零或非零衍射级项或干扰项使用 光学计量工具。 周期性目标具有间距，并且测量包含零衍射级和一个或多个非零衍射级项。 使用光学测量工具，入射光束被引导到目标上的位置，并且响应于入射光束从目标获得测量值。 处理测量以消除或获得与每个选定的零或非零衍射级相关联的每个零或非零衍射级项或干涉项，导致处理的度量信号。 这些位置彼此偏移，以便消除或获得与零或非零衍射级相对应的零或非零衍射级项或干涉项。
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公开(公告)号：US20200243400A1
公开(公告)日：2020-07-30
申请号：US16257066
申请日：2019-01-24
发明人： David Y. Wang , Esen Salcin , Michael Friedmann , Derrick Shaughnessy , Andrei V. Shchegrov , Jonathan M. Madsen , Alexander Kuznetsov
摘要： Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.
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公开(公告)号：US20190214285A1
公开(公告)日：2019-07-11
申请号：US16198658
申请日：2018-11-21
摘要： In some embodiments, a first plurality of electron-microscope images for respective instances of a semiconductor structure is obtained from a first source. The electron-microscope images of the first plurality show different values of one or more semiconductor-fabrication parameters. A model is trained that specifies a relationship between the first plurality of electron-microscope images and the values of the one or more semiconductor-fabrication parameters. A second plurality of electron-microscope images for respective instances of the semiconductor structure on one or more semiconductor wafers is collected. The one or more semiconductor wafers are distinct from the first source. Values of the one or more semiconductor-fabrication parameters for the second plurality of electron-microscope images are predicted using the model.
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公开(公告)号：US20190212281A1
公开(公告)日：2019-07-11
申请号：US16230489
申请日：2018-12-21
IPC分类号： G01N23/223 , G02B27/09 , H05G1/30 , G01N23/083 , G01N23/207
CPC分类号： G01N23/223 , G01N23/083 , G01N23/2076 , G02B27/0977 , H05G1/30
摘要： Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.
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