X-Ray Metrology System With Broadband Laser Produced Plasma Illuminator

    公开(公告)号:US20190215940A1

    公开(公告)日:2019-07-11

    申请号:US15867633

    申请日:2018-01-10

    Abstract: Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.

    EUV LIGHT SOURCE USING CRYOGENIC DROPLET TARGETS IN MASK INSPECTION
    2.
    发明申请
    EUV LIGHT SOURCE USING CRYOGENIC DROPLET TARGETS IN MASK INSPECTION 有权
    EUV光源在面板检测中使用低温滴定靶

    公开(公告)号:US20140246607A1

    公开(公告)日:2014-09-04

    申请号:US14180107

    申请日:2014-02-13

    Abstract: An apparatus for generating extreme ultra-violet (EUV) light for use in a lithography inspection tool, comprising a drive laser arranged to produce a laser pulse, a vacuum chamber, a set of focusing optics arranged to focus the laser pulse produced by the drive laser onto a target spot within the vacuum chamber with a beam target diameter of less than 100 μm, a target material generator arranged to deliver an amount of a target material to the target spot within the vacuum chamber, and a set of collector optics arranged to focus a quantity of EUV light generated when the amount of the target material is exposed to the laser pulse at the target spot onto an intermediate focus spot.

    Abstract translation: 一种用于产生用于光刻检查工具的极紫外(EUV)光的装置,包括布置成产生激光脉冲的驱动激光器,真空室,一组聚焦光学元件,其被布置成聚焦由驱动器产生的激光脉冲 激光到靶室直径小于100μm的真空室内的目标点上,目标材料发生器布置成将一定量的目标材料输送到真空室内的目标点,以及一组集光器,其被布置成 将当目标材料的量暴露于目标点处的激光脉冲的量的EUV光聚焦到中间焦点上。

    Beam shaping slit for small spot size transmission small angle X-ray scatterometry

    公开(公告)号:US10359377B2

    公开(公告)日:2019-07-23

    申请号:US15495634

    申请日:2017-04-24

    Abstract: Methods and systems for reducing the effect of finite source size on illumination beam spot size for Transmission, Small-Angle X-ray Scatterometry (T-SAXS) measurements are described herein. A beam shaping slit having a slender profile is located in close proximity to the specimen under measurement and does not interfere with wafer stage components over the full range of angles of beam incidence. In one embodiment, four independently actuated beam shaping slits are employed to effectively block a portion of an incoming x-ray beam and generate an output beam having a box shaped illumination cross-section. In one aspect, each of the beam shaping slits is located at a different distance from the specimen in a direction aligned with the beam axis. In another aspect, the beam shaping slits are configured to rotate about the beam axis in coordination with the orientation of the specimen.

    Plasma-Based Light Source
    4.
    发明申请
    Plasma-Based Light Source 审中-公开
    等离子体光源

    公开(公告)号:US20160249442A1

    公开(公告)日:2016-08-25

    申请号:US14838594

    申请日:2015-08-28

    CPC classification number: H05G2/003 G03F7/20 G03F7/70033 H05G2/008

    Abstract: The present disclosure is directed to plasma-based light sources. Systems and methods are described for protecting components of the light source from plasma generated debris which can include target material gas, atomic vapor, high energy ions, neutrals, micro-particles, and contaminants. Particular embodiments include arrangements for reducing the adverse effects of plasma generated ions and neutrals on light source components while simultaneously reducing in-band light attenuation due to target material gas and vapor.

    Abstract translation: 本公开涉及基于等离子体的光源。 描述了用于保护光源的组分的等离子体产生的碎片的系统和方法,其可以包括目标材料气体,原子蒸汽,高能离子,中性粒子,微粒子和污染物。 具体实施方案包括用于减少等离子体产生的离子和中性物质对光源组分的不利影响的装置,同时减少由于目标材料气体和蒸汽引起的带内光衰减。

    Debris Protection System For Reflective Optic Utilizing Gas Flow
    5.
    发明申请
    Debris Protection System For Reflective Optic Utilizing Gas Flow 有权
    用于反射光学利用气体流动的碎片保护系统

    公开(公告)号:US20140306115A1

    公开(公告)日:2014-10-16

    申请号:US14247082

    申请日:2014-04-07

    Abstract: The present disclosure is directed to a system for protecting a reflective optic and/or any other surface in a plasma-based illumination system from debris by actively flowing gas against the debris flow direction. According to various embodiments, a vacuum chamber is configured to contain a target material, wherein a laser or discharge produced plasma is generated in response to an excitation of the target material. One or more outlets within the chamber are configured to receive gas flowing from a fluidically coupled gas source and further configured to actively flow the gas towards a source of debris and away from the reflective optic or any other protected surface at a controlled flow rate.

    Abstract translation: 本公开涉及一种用于通过主动地流动气体抵抗碎屑流动方向来保护基于等离子体的照明系统中的反射光学器件和/或任何其它表面免受碎片的系统。 根据各种实施例,真空室被配置为容纳目标材料,其中响应于目标材料的激发产生激光或放电产生的等离子体。 腔室内的一个或多个出口构造成接收从流体耦合的气体源流动的气体,并进一步配置成主动地将气体朝向碎屑源流动,并以受控流速远离反射光学元件或任何其它受保护的表面。

    Multilayer Targets For Calibration And Alignment Of X-Ray Based Measurement Systems

    公开(公告)号:US20190302039A1

    公开(公告)日:2019-10-03

    申请号:US16364163

    申请日:2019-03-25

    Abstract: Multilayer targets enabling fast and accurate, absolute calibration and alignment of X-ray based measurement systems are described herein. The multilayer calibration targets have very high diffraction efficiency and are manufactured using fast, low cost production techniques. Each target includes a multilayer structure built up with pairs of X-ray transparent and X-ray absorbing materials. The layers of the multilayer target structure is oriented parallel to an incident X-ray beam. Measured diffraction patterns indicate misalignment in position and orientation between the incident X-Ray beam and the multilayer target. In another aspect, a composite multilayer target includes at least two multilayer structures arranged adjacent one another along a direction aligned with the incident X-ray beam, adjacent one another along a direction perpendicular to the incident X-ray beam, or a combination thereof. In some embodiments, the multilayer structures are spatially separated from one another by a gap distance.

    System and method for generation of extreme ultraviolet light
    8.
    发明授权
    System and method for generation of extreme ultraviolet light 有权
    用于产生极紫外光的系统和方法

    公开(公告)号:US09544984B2

    公开(公告)日:2017-01-10

    申请号:US14335442

    申请日:2014-07-18

    Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.

    Abstract translation: EUV光源包括可旋转的圆柱对称元件,其具有涂覆有等离子体形成目标材料的表面;驱动激光源,被配置为产生足以通过激发等离子体产生EUV光的一个或多个激光脉冲 等离子体形成目标材料,一组聚焦光学元件,其被配置为将一个或多个激光脉冲聚焦到可旋转的圆柱形对称元件的表面上;一组收集光学器件,被配置为接收从所产生的等离子体发出的EUV光,并进一步配置 将照明引导到中间焦点,以及气体管理系统,其包括被配置为将等离子体形成目标材料供应到可旋转的圆柱对称元件的表面的气体供应子系统。

    EUV light source using cryogenic droplet targets in mask inspection
    9.
    发明授权
    EUV light source using cryogenic droplet targets in mask inspection 有权
    EUV光源在面罩检查中使用低温液滴靶

    公开(公告)号:US09295147B2

    公开(公告)日:2016-03-22

    申请号:US14180107

    申请日:2014-02-13

    Abstract: An apparatus for generating extreme ultra-violet (EUV) light, including a drive laser arranged to produce a laser pulse, a vacuum chamber, a set of focusing optics arranged to focus the laser pulse produced by the drive laser onto a target spot within the vacuum chamber, a target material generator arranged to deliver a series of droplets of a target material to the target spot by modulating a flow velocity of a supply of the target material through a nozzle tip and thereby inducing a formation process of the series of droplets which series of droplets from the nozzle tip are expelled through a triple point chamber, and a set of collector optics arranged to focus a quantity of EUV light generated when a droplet of the series of drople of the target material is exposed to the laser pulse at the target spot onto an intermediate focus spot.

    Abstract translation: 一种用于产生极紫外(EUV)光的装置,包括布置成产生激光脉冲的驱动激光器,真空室,一组聚焦光学元件,其被布置成将由驱动激光产生的激光脉冲聚焦到该激光脉冲内的目标点上 真空室,目标材料发生器,其布置成通过调节目标材料的供应通过喷嘴尖端的流速而将目标材料的一系列液滴输送到目标点,从而引起一系列液滴的形成过程, 来自喷嘴尖端的一系列液滴通过三点室排出,并且一组收集器光学器件被布置成将当目标材料的一系列喷雾的液滴暴露于激光脉冲时产生的一定数量的EUV光 目标点到中间焦点。

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