Recipe Optimization Based Zonal Analysis
    1.
    发明申请

    公开(公告)号:US20190088514A1

    公开(公告)日:2019-03-21

    申请号:US15751514

    申请日:2017-12-11

    Abstract: Metrology methods and modules are provided, which comprise carrying out recipe setup procedure(s) and/or metrology measurement(s) using zonal analysis with respect to respective setup parameter(s) and/or metrology metric(s). The zonal analysis comprises relating to spatially variable values of the setup parameter(s) and/or metrology metric(s) across one or more wafers in one or more lots. Wafer zones may be discrete or spatially continuous, and be used to weight one or more parameter(s) and/or metric(s) during any of the stages of the respective setup and measurement processes.

    POLARIZATION MEASUREMENTS OF METROLOGY TARGETS AND CORRESPONDING TARGET DESIGNS
    2.
    发明申请
    POLARIZATION MEASUREMENTS OF METROLOGY TARGETS AND CORRESPONDING TARGET DESIGNS 审中-公开
    计量目标和相应目标设计的极化度量

    公开(公告)号:US20160178351A1

    公开(公告)日:2016-06-23

    申请号:US14949444

    申请日:2015-11-23

    Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

    Abstract translation: 提供了目标,目标元素和目标设计方法,其包括将目标结构设计为具有高于特定对比度阈值的高对比度至其偏振光背景,同时具有低于特定对比度阈值至其非极化背景下的特定对比度阈值的低对比度 光。 目标可能在设备特征尺度上具有细节,并且与设备设计规则兼容,并且当用偏振照明测量时保持光学对比度,并且因此被有效地用作计量目标。 同样提供了设计变型和相应的测量光学系统。

    METHOD AND APPARATUS FOR DIRECT SELF ASSEMBLY IN TARGET DESIGN AND PRODUCTION
    3.
    发明申请
    METHOD AND APPARATUS FOR DIRECT SELF ASSEMBLY IN TARGET DESIGN AND PRODUCTION 审中-公开
    目标设计和生产中直接自组装的方法和装置

    公开(公告)号:US20150242558A1

    公开(公告)日:2015-08-27

    申请号:US14710201

    申请日:2015-05-12

    Abstract: Target designs methods and targets are provided, in which at least some of the differentiation between target elements and their background is carried out by segmenting either of them. Directed self-assembly (DSA) processes are used to generate fine segmentation, and various characteristics of the polymer lines and their guiding lines are used to differentiate target elements from their background. Target designs and design principles are disclosed in relation to the DSA process, as well as optimization of the DSA process to yield high metrology measurement accuracy in face of production inaccuracies. Furthermore, designs and methods are provided for enhancing and using ordered regions of a DSA-produced polymer surface as target elements and as hard masks for production processes. The targets and methods may be configured to enable metrology measurements using polarized light to distinguish target elements or DSA features.

    Abstract translation: 提供了目标设计方法和目标,其中目标元素与其背景之间的至少一些区分通过分割它们之一进行。 定向自组装(DSA)过程用于生成细分,聚合物线及其引导线的各种特征用于区分目标元素与其背景。 关于DSA过程披露了目标设计和设计原理,以及在生产不准确的情况下优化DSA过程以产生高计量测量精度。 此外,提供了用于增强和使用DSA生产的聚合物表面的有序区域作为目标元素的设计和方法,以及用于生产过程的硬掩模。 目标和方法可以被配置为使得能够使用偏振光进行度量测量来区分目标元素或DSA特征。

    METHOD OF MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICES

    公开(公告)号:US20210149314A1

    公开(公告)日:2021-05-20

    申请号:US17161035

    申请日:2021-01-28

    Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

    IDENTIFYING REGISTRATION ERRORS OF DSA LINES
    5.
    发明申请
    IDENTIFYING REGISTRATION ERRORS OF DSA LINES 审中-公开
    识别DSA线的注册错误

    公开(公告)号:US20160018819A1

    公开(公告)日:2016-01-21

    申请号:US14867834

    申请日:2015-09-28

    Abstract: Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.

    Abstract translation: 提供方法和各个模块,其被配置为通过将结构的测量签名与对应于具有变化的模拟特征的模拟结构的模拟签名进行比较来识别DSA线相对于所产生的结构中的引导线的登记误差,以及表征所产生的结构 根据比较。 可以使用几何模型的电磁表征或通过分析基于模型的结果以无模型的方式进行表征。 因此,可以首次测量DSA线的定位和尺寸误差。

    METHOD OF MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICES

    公开(公告)号:US20200271596A1

    公开(公告)日:2020-08-27

    申请号:US16349101

    申请日:2019-04-12

    Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

    ON-PRODUCT DERIVATION AND ADJUSTMENT OF EXPOSURE PARAMETERS IN A DIRECTED SELF-ASSEMBLY PROCESS
    8.
    发明申请
    ON-PRODUCT DERIVATION AND ADJUSTMENT OF EXPOSURE PARAMETERS IN A DIRECTED SELF-ASSEMBLY PROCESS 有权
    产品衍生和调整自动组装过程中的曝光参数

    公开(公告)号:US20150301514A1

    公开(公告)日:2015-10-22

    申请号:US14755758

    申请日:2015-06-30

    Abstract: Methods and metrology tool modules embodying the methods are provided. Methods comprise measuring characteristics of intermediate features such as guiding lines in a directed self-assembly (DSA) process, deriving exposure parameters from the measured characteristics; and adjusting production parameters for producing consecutive target features according to the derived exposure parameters. The methods and modules enhance the accuracy of the DSA-produced structures and related measurements.

    Abstract translation: 提供了体现方法的方法和计量工具模块。 方法包括测量中间特征的特征,例如在定向自组装(DSA)过程中的引导线,从测量的特征导出曝光参数; 并根据导出的曝光参数调整生产连续目标特征的生产参数。 这些方法和模块提高了DSA生产的结构和相关测量的准确性。

Patent Agency Ranking