公开(公告)号：US08304354B2

公开(公告)日：2012-11-06

申请号：US12765496

申请日：2010-04-22

申请人： Kai-Chun Hsu ,  Yeur-Luen Tu ,  Chung Chien Wang ,  Tzu-Hsuan Hsu ,  Ching-Chun Wang

发明人： Kai-Chun Hsu ,  Yeur-Luen Tu ,  Chung Chien Wang ,  Tzu-Hsuan Hsu ,  Ching-Chun Wang

IPC分类号： H01L21/31

CPC分类号： H01L27/14698 ,  H01L21/268 ,  H01L27/1464 ,  H01L27/14643

摘要： Methods are disclosed herein for determining the laser beam size and the scan pattern of laser annealing when fabricating backside illumination (BSI) CMOS image sensors to keep dark-mode stripe patterns corresponding to laser scan boundary effects from occurring within the sensor array regions of the image sensors. Each CMOS image sensor has a sensor array region and a periphery circuit. The methods determines a size of the laser beam from a length of the sensor array region and a length of the periphery circuit so that the laser beam covers an integer number of the sensor array region for at least one alignment of the laser beam on the array of BSI image sensors. The methods further determines a scan pattern so that the boundary of the laser beam does not overlap the sensor array regions during the laser annealing, but only overlaps the periphery circuits.

摘要翻译： 本文公开了用于确定当制造背面照明（BSI）CMOS图像传感器以保持对应于激光扫描边界效应的暗模式条纹图案在图像的传感器阵列区域内发生的激光退火的激光束尺寸和扫描图案的方法 传感器。 每个CMOS图像传感器具有传感器阵列区域和外围电路。 该方法确定来自传感器阵列区域的长度和外围电路的长度的激光束的尺寸，使得激光束覆盖整数个传感器阵列区域，用于激光束在阵列上的至少一个对准 的BSI图像传感器。 该方法进一步确定扫描图案，使得激光束的边界在激光退火期间不与传感器阵列区域重叠，而仅与外围电路重叠。

公开(公告)号：US08405177B2

公开(公告)日：2013-03-26

申请号：US13238420

申请日：2011-09-21

申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20120007204A1

公开(公告)日：2012-01-12

申请号：US13238420

申请日：2011-09-21

申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC分类号： H01L27/146 ,  H01L31/0352

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20110294250A1

公开(公告)日：2011-12-01

申请号：US13206228

申请日：2011-08-09

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/18

CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

摘要： Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.

摘要翻译： 提供一种形成和/或使用背面照明传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。 传输晶体管和光电检测器形成在前表面上。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。 可以由光电检测器感测反射的辐射。

公开(公告)号：US20110031542A1

公开(公告)日：2011-02-10

申请号：US12904903

申请日：2010-10-14

申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC分类号： H01L31/14 ,  H01L29/66

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20100181635A1

公开(公告)日：2010-07-22

申请号：US12405454

申请日：2009-03-17

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US08436443B2

公开(公告)日：2013-05-07

申请号：US12107199

申请日：2008-04-22

申请人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

IPC分类号： H01L27/146 ,  H01L31/09

CPC分类号： H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

摘要翻译： 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

公开(公告)号：US20120280357A1

公开(公告)日：2012-11-08

申请号：US13552734

申请日：2012-07-19

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu

IPC分类号： H01L27/06

CPC分类号： H01L23/522 ,  H01L21/6836 ,  H01L21/76256 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

摘要： Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of the semiconductor substrate to a carrier substrate, thinning the semiconductor substrate from the back side, and forming an trench from the back side to the front side of the semiconductor substrate to isolate the first circuit from the second circuit.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括提供具有正面和背面的半导体衬底，在半导体衬底的正面形成第一电路和第二电路，将半导体衬底的正面粘合到 载体衬底，从背面减薄半导体衬底，并且从半导体衬底的背侧到前侧形成沟槽，以将第一电路与第二电路隔离。

公开(公告)号：US08247882B2

公开(公告)日：2012-08-21

申请号：US13009354

申请日：2011-01-19

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu

IPC分类号： H01L29/00

CPC分类号： H01L23/522 ,  H01L21/6836 ,  H01L21/76256 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

摘要： Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of the semiconductor substrate to a carrier substrate, thinning the semiconductor substrate from the back side, and forming an trench from the back side to the front side of the semiconductor substrate to isolate the first circuit from the second circuit.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括提供具有正面和背面的半导体衬底，在半导体衬底的正面形成第一电路和第二电路，将半导体衬底的正面粘合到 载体衬底，从背面减薄半导体衬底，并且从半导体衬底的背侧到前侧形成沟槽，以将第一电路与第二电路隔离。

公开(公告)号：US08030721B2

公开(公告)日：2011-10-04

申请号：US12904903

申请日：2010-10-14

申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。