公开(公告)号：US08247847B2

公开(公告)日：2012-08-21

申请号：US12612466

申请日：2009-11-04

申请人： Kaori Takimoto ,  Masayuki Okada ,  Takeshi Takeda

发明人： Kaori Takimoto ,  Masayuki Okada ,  Takeshi Takeda

IPC分类号： H01L27/148 ,  H01L29/66

CPC分类号： H01L27/14843 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/14683

摘要： A solid-state imaging device including a first transfer electrode portion and a second transfer electrode portion having a pattern area ratio higher than that of the first transfer electrode portion. The first transfer electrode portion includes a plurality of first transfer electrodes having a single-layer structure of metal material. The second transfer electrode portion includes a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon.

摘要翻译： 一种固态成像装置，包括第一转印电极部分和具有高于第一转印电极部分的图案面积比的第二转印电极部分。 第一转印电极部分包括具有单层金属材料结构的多个第一转印电极。 第二转移电极部分包括具有多晶硅或非晶硅的单层结构的多个第二转移电极。

公开(公告)号：US20090263929A1

公开(公告)日：2009-10-22

申请号：US12382713

申请日：2009-03-23

申请人： Takeshi Takeda ,  Yukihiro Ando ,  Masaki Okamoto ,  Masayuki Okada ,  Kaori Takimoto ,  Katsuhisa Kugimiya ,  Tadayuki Kimura

发明人： Takeshi Takeda ,  Yukihiro Ando ,  Masaki Okamoto ,  Masayuki Okada ,  Kaori Takimoto ,  Katsuhisa Kugimiya ,  Tadayuki Kimura

IPC分类号： H01L31/00

CPC分类号： H01L27/14812 ,  H01L27/14831

摘要： A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insulating layer on the substrate to cover the transfer electrodes formed on the substrate; forming openings in the planarized insulating layer so that each of the transfer electrodes is partly exposed out of the planarized insulating layer at a predetermined position; forming a wiring material layer so that the openings are filled with the wiring material layer; forming a resist layer on the wiring material layer; exposing and developing the resist layer so that only the resist layer in a predetermined area covering the openings is left; and patterning the wiring material layer using the exposed and developed resist layer to form connection wirings connected to the transfer electrodes by the openings.

摘要翻译： 一种制造固态成像装置的方法，包括以下步骤：通过栅极绝缘层，在具有多个光检测部分的基板上形成转印电极，使得光敏部分露出; 在所述基板上形成平坦化的绝缘层，以覆盖形成在所述基板上的转移电极; 在平坦化绝缘层中形成开口，使得每个传输电极在预定位置部分地暴露在平坦化绝缘层之外; 形成布线材料层，使得开口被布线材料层填充; 在所述布线材料层上形成抗蚀剂层; 曝光和显影抗蚀剂层，使得仅保留覆盖开口的预定区域中的抗蚀剂层; 并使用曝光和显影的抗蚀剂层图案化布线材料层，以形成通过开口连接到转印电极的连接布线。

公开(公告)号：US07977140B2

公开(公告)日：2011-07-12

申请号：US12382713

申请日：2009-03-23

申请人： Takeshi Takeda ,  Yukihiro Ando ,  Masaki Okamoto ,  Masayuki Okada ,  Kaori Takimoto ,  Katsuhisa Kugimiya ,  Tadayuki Kimura

发明人： Takeshi Takeda ,  Yukihiro Ando ,  Masaki Okamoto ,  Masayuki Okada ,  Kaori Takimoto ,  Katsuhisa Kugimiya ,  Tadayuki Kimura

IPC分类号： H01L21/00

CPC分类号： H01L27/14812 ,  H01L27/14831

摘要： A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insulating layer on the substrate to cover the transfer electrodes formed on the substrate; forming openings in the planarized insulating layer so that each of the transfer electrodes is partly exposed out of the planarized insulating layer at a predetermined position; forming a wiring material layer so that the openings are filled with the wiring material layer; forming a resist layer on the wiring material layer; exposing and developing the resist layer so that only the resist layer in a predetermined area covering the openings is left; and patterning the wiring material layer using the exposed and developed resist layer to form connection wirings connected to the transfer electrodes by the openings.

摘要翻译： 一种制造固态成像装置的方法，包括以下步骤：通过栅极绝缘层，在具有多个光检测部分的基板上形成转印电极，使得光敏部分露出; 在所述基板上形成平坦化的绝缘层，以覆盖形成在所述基板上的转移电极; 在平坦化绝缘层中形成开口，使得每个传输电极在预定位置部分地从平坦化绝缘层露出; 形成布线材料层，使得开口被布线材料层填充; 在所述布线材料层上形成抗蚀剂层; 曝光和显影抗蚀剂层，使得仅保留覆盖开口的预定区域中的抗蚀剂层; 并使用曝光和显影的抗蚀剂层图案化布线材料层，以形成通过开口连接到转印电极的连接布线。

公开(公告)号：US08384166B2

公开(公告)日：2013-02-26

申请号：US12476507

申请日：2009-06-02

申请人： Kaori Takimoto

发明人： Kaori Takimoto

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/28

CPC分类号： H01L29/42368 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/66545

摘要： A semiconductor device manufacturing method includes the steps of: successively forming, on a semiconductor substrate, a gate insulating film and first and second dummy sections stacked in this order; forming a notch section by processing the gate insulating film and the first and second dummy gate sections into a previously set pattern and making the first dummy gate section move back in the gate length direction relative to the second dummy gate section; forming a side wall of an insulating material in a side part of each of the gate insulating film and the first and second dummy gate sections and embedding the notch section therewith; removing the first and second dummy gate sections to leave the gate insulating film and the notch section in the bottom of a removed portion; and forming a gate electrode made of a conductive material by embedding the removed portion with the conductive material.

摘要翻译： 半导体器件制造方法包括以下步骤：在半导体衬底上依次形成栅极绝缘膜和依次堆叠的第一和第二虚拟部分; 通过将所述栅极绝缘膜和所述第一和第二伪栅极部分处理成预先设定的图案并使所述第一伪栅极部分相对于所述第二伪栅极部分在所述栅极长度方向上向后移动而形成陷波部分; 在所述栅极绝缘膜和所述第一和第二伪栅极部分的侧面部分中形成绝缘材料的侧壁，并且将所述切口部分嵌入其中; 去除第一和第二伪栅极部分以使去除部分的底部留下栅极绝缘膜和切口部分; 以及通过将去除的部分嵌入导电材料中而形成由导电材料制成的栅电极。

公开(公告)号：US08760545B2

公开(公告)日：2014-06-24

申请号：US13154004

申请日：2011-06-06

申请人： Kaori Takimoto

发明人： Kaori Takimoto

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/148 ,  H01L21/00

CPC分类号： H01L27/1464 ,  H01L27/14687

摘要： A solid-state imaging device includes: a semiconductor substrate that has a light sensing portion which photoelectrically converts incident light; an infrared cut filter layer or a light shielding layer that is provided on a surface side opposite to a light receiving surface of the semiconductor substrate and is formed on substantially the entire surface of an area corresponding to an area in which the light sensing portion of the semiconductor substrate is formed; and a wiring layer that is provided on an upper layer of the infrared cut filter layer or the light shielding layer.

摘要翻译： 一种固态成像装置，包括：半导体基板，具有对入射光进行光电转换的感光部; 红外截止滤光层或遮光层，其设置在与半导体基板的受光面相反侧的表面侧，并且形成在与所述半导体基板的光检测部的区域对应的区域的大致整个表面上 形成半导体衬底; 以及设置在红外截止滤光层或遮光层的上层的布线层。

公开(公告)号：US07939860B2

公开(公告)日：2011-05-10

申请号：US12389864

申请日：2009-02-20

申请人： Kaori Takimoto

发明人： Kaori Takimoto

IPC分类号： H01L27/148

CPC分类号： H01L31/103 ,  H01L27/14609

摘要： Disclosed herein is a solid-state imaging device including: a semiconductor substrate; a sensor of impurity diffusion layer formed on the surface layer of said semiconductor substrate; a negative charge accumulation layer formed on said sensor from an insulating material containing a first metallic substance; and an interfacial layer formed between said sensor and said negative charge accumulation layer from an insulating material containing a second metallic substance having greater electronegativity than said first metallic substance.

摘要翻译： 本文公开了一种固态成像装置，包括：半导体衬底; 形成在所述半导体衬底的表面层上的杂质扩散层的传感器; 由含有第一金属物质的绝缘材料形成在所述传感器上的负电荷累积层; 以及由包含比所述第一金属物质具有更大的电负性的第二金属物质的绝缘材料形成在所述传感器和所述负电荷累积层之间的界面层。

公开(公告)号：US08912579B2

公开(公告)日：2014-12-16

申请号：US13313721

申请日：2011-12-07

申请人： Kaori Takimoto

发明人： Kaori Takimoto

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14818 ,  H01L27/1462 ,  H01L27/14683 ,  H01L27/14843

摘要： A solid-state image pickup device includes: a photoelectric conversion portion formed on a substrate and composed of a photodiode; an image pickup area in which plural pixels each including a reading-out electrode for reading out signal electric charges generated and accumulated in the photoelectric conversion portion are formed; and a light blocking film having an opening portion right above the photoelectric conversion portion in an effective pixel area of the image pickup area, and light-blocking said photoelectric conversion portion in an OB pixel area of the image pickup area, in which a film deposited between the light blocking film and the substrate right above the photoelectric conversion portion in the OB pixel area is composed of only a silicon oxide film.

摘要翻译： 固体摄像装置包括：光电转换部，形成在基板上，由光电二极管构成; 形成摄像区域，其中形成有包括用于读出在光电转换部分中产生和累积的信号电荷的读出电极的多个像素; 以及遮光膜，其具有位于图像拾取区域的有效像素区域中的光电转换部分正上方的开口部分，以及在图像拾取区域的OB像素区域中的遮光所述光电转换部分，其中膜沉积 在OB像素区域中的光电转换部分正上方的遮光膜和基板之间仅由氧化硅膜构成。

公开(公告)号：US20130020663A1

公开(公告)日：2013-01-24

申请号：US13547655

申请日：2012-07-12

申请人： Kaori Takimoto

发明人： Kaori Takimoto

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/307 ,  H01L27/14645 ,  H01L27/14656

摘要： A solid-state imaging device includes a semiconductor substrate and a photoelectric conversion layer above the semiconductor substrate. The photoelectric conversion layer includes a lower electrode having a side surface insulated with an insulating film, a photoelectric conversion film on the lower electrode, and an upper electrode. The upper electrode and the lower electrode sandwich the photoelectric conversion film. An upper surface of the lower electrode is lower than an upper surface of the insulating film.

摘要翻译： 固体摄像器件包括半导体衬底和半导体衬底之上的光电转换层。 光电转换层包括具有用绝缘膜绝缘的侧表面的下电极，下电极上的光电转换膜和上电极。 上电极和下电极夹着光电转换膜。 下电极的上表面比绝缘膜的上表面低。

公开(公告)号：US20120188431A1

公开(公告)日：2012-07-26

申请号：US13313721

申请日：2011-12-07

申请人： Kaori Takimoto

发明人： Kaori Takimoto

IPC分类号： H01L27/148 ,  H04N5/335 ,  H01L31/18

CPC分类号： H01L27/14818 ,  H01L27/1462 ,  H01L27/14683 ,  H01L27/14843

摘要： A solid-state image pickup device includes: a photoelectric conversion portion formed on a substrate and composed of a photodiode; an image pickup area in which plural pixels each including a reading-out electrode for reading out signal electric charges generated and accumulated in the photoelectric conversion portion are formed; and a light blocking film having an opening portion right above the photoelectric conversion portion in an effective pixel area of the image pickup area, and light-blocking said photoelectric conversion portion in an OB pixel area of the image pickup area, in which a film deposited between the light blocking film and the substrate right above the photoelectric conversion portion in the OB pixel area is composed of only a silicon oxide film.

摘要翻译： 固体摄像装置包括：光电转换部，形成在基板上，由光电二极管构成; 形成摄像区域，其中形成有包括用于读出在光电转换部分中产生和累积的信号电荷的读出电极的多个像素; 以及遮光膜，其具有位于图像拾取区域的有效像素区域中的光电转换部分正上方的开口部分，以及在图像拾取区域的OB像素区域中的遮光所述光电转换部分，其中膜沉积 在OB像素区域中的光电转换部分正上方的遮光膜和基板之间仅由氧化硅膜构成。

公开(公告)号：US20120008024A1

公开(公告)日：2012-01-12

申请号：US13154004

申请日：2011-06-06

申请人： Kaori Takimoto

发明人： Kaori Takimoto

IPC分类号： H04N5/335 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14687

摘要： A solid-state imaging device includes: a semiconductor substrate that has a light sensing portion which photoelectrically converts incident light; an infrared cut filter layer or a light shielding layer that is provided on a surface side opposite to a light receiving surface of the semiconductor substrate and is formed on substantially the entire surface of an area corresponding to an area in which the light sensing portion of the semiconductor substrate is formed; and a wiring layer that is provided on an upper layer of the infrared cut filter layer or the light shielding layer.

摘要翻译： 一种固态成像装置，包括：半导体基板，具有对入射光进行光电转换的感光部; 红外截止滤光层或遮光层，其设置在与半导体基板的受光面相反侧的表面侧，并且形成在与所述半导体基板的光检测部的区域对应的区域的大致整个表面上 形成半导体衬底; 以及设置在红外截止滤光层或遮光层的上层的布线层。