公开(公告)号：US6150231A

公开(公告)日：2000-11-21

申请号：US97784

申请日：1998-06-15

申请人： Karl Paul Muller ,  Venkatachalam C. Jaiprakash ,  Christopher J. Gould

发明人： Karl Paul Muller ,  Venkatachalam C. Jaiprakash ,  Christopher J. Gould

IPC分类号： H01L21/027 ,  G03F7/20 ,  G03F9/00 ,  H01L21/66 ,  H01L21/76

CPC分类号： G03F7/70633

摘要： Misalignment between two masking steps used in the manufacture of semiconductive devices in a wafer is determined by having a special alignment pattern on each of two masks used in the process and forming images of the masks on the semiconductor devices with the images of the alignment patterns being superimposed over one another to form a Moire pattern. The Moire pattern is compared with other Moire patterns known to correspond to particular amounts of misalignment of the masks to see if it corresponds to an acceptable alignment.

摘要翻译： 通过在工艺中使用的两个掩模中的每一个上具有特殊的对准图案并且在半导体器件上形成掩模的图像，其中对准图案的图像为 叠加在一起形成莫尔图案。 将莫尔图案与已知对应于掩模的特定量的未对准的其它莫尔图案进行比较，以查看它是否对应于可接受的对准。

公开(公告)号：US5776808A

公开(公告)日：1998-07-07

申请号：US777156

申请日：1996-12-26

申请人： Karl Paul Muller ,  Bernhard Poschenrieder ,  Klaus Roithner

发明人： Karl Paul Muller ,  Bernhard Poschenrieder ,  Klaus Roithner

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10861 ,  H01L21/31116

摘要： A method for allowing the removal of a TEOS etch mask layer utilizing an anisotropic technique such as reactive ion etching. The use of the anisotropic technique results in substantially less undercutting of the pad oxide layer than wet chemical etching techniques. One embodiment of the invention involves forming a polysilicon etch stop layer under the pad TEOS layer.

摘要翻译： 使用诸如反应离子蚀刻的各向异性技术来允许去除TEOS蚀刻掩模层的方法。 与湿化学蚀刻技术相比，使用各向异性技术导致焊盘氧化物层的底切性更少。 本发明的一个实施例涉及在焊盘TEOS层下面形成多晶硅蚀刻停止层。

公开(公告)号：US5667622A

公开(公告)日：1997-09-16

申请号：US519373

申请日：1995-08-25

申请人： Isahiro Hasegawa ,  Karl Paul Muller ,  Bernhard L. Poschenriedes ,  Hans-Joerg Timme ,  Theodore Van Kessel

发明人： Isahiro Hasegawa ,  Karl Paul Muller ,  Bernhard L. Poschenriedes ,  Hans-Joerg Timme ,  Theodore Van Kessel

IPC分类号： C23C16/52 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L35/28

CPC分类号： H01L21/67103 ,  H01L21/67069

摘要： A temperature control apparatus for single wafer etching tools comprising a cathode electrode, an isolation layer, and chuck means, respectfully, which are vertically stacked to support a wafer to be etched. A layer of thermoelectric elements is disposed between the isolation layer and the chuck means. The layer of thermoelectric elements comprises a center area closed loop of connected Peltier elements and an outer area closed loop of connected Peltier elements. The center area closed loop is coupled to a power source and is arranged to correspond to the center area of the wafer. The outer area closed loop is coupled to a power source and is arranged to correspond to the outer area of the wafer. Accordingly, the temperatures associated with each of the specific areas of the wafer are individually controlled by one of the closed loops.

摘要翻译： 一种用于单晶片蚀刻工具的温度控制装置，其包括阴极电极，隔离层和卡盘装置，其垂直堆叠以支撑待蚀刻的晶片。 一层热电元件设置在隔离层和卡盘装置之间。 热电元件层包括连接的珀耳帖元件的中心区域闭环和连接的珀耳帖元件的外部区域闭环。 中心区闭环耦合到电源并且被布置成对应于晶片的中心区域。 外部区域闭环耦合到电源，并且被布置成对应于晶片的外部区域。 因此，与晶片的每个特定区域相关联的温度由一个闭环单独控制。

公开(公告)号：US06294026B1

公开(公告)日：2001-09-25

申请号：US08756670

申请日：1996-11-26

申请人： Klaus Roithner ,  Bernhard Poschenrieder ,  Karl Paul Muller

发明人： Klaus Roithner ,  Bernhard Poschenrieder ,  Karl Paul Muller

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45561

摘要： The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.

摘要翻译： 本发明是一种用于在反应室内安装反应物气体的装置。 该装置能够用于气相沉积和蚀刻工艺。 该设备基本上补偿了由气体耗尽引起的晶片边缘处气相沉积和蚀刻不均匀的问题。 具有延伸穿过其中的多个孔的气体分配板附接到反应室的内表面。 至少一个真空密封隔板设置在气体分配板的表面和室的内表面之间。 隔板将板和反应室之间的空间分隔成气体分配区。 气体入口连接到每个气体分配区。 每个气体入口管线具有至少一个质量流量控制器，其调节到每个气体分配区域的气体流量。 质量流量控制器用于确保化学气相沉积或蚀刻跨基板表面的均匀速率。

公开(公告)号：US5961723A

公开(公告)日：1999-10-05

申请号：US756670

申请日：1996-11-26

申请人： Klaus Roithner ,  Bernhard Poschenrieder ,  Karl Paul Muller

发明人： Klaus Roithner ,  Bernhard Poschenrieder ,  Karl Paul Muller

摘要： The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.