摘要:
A regeneration method of a working solution is herein disclosed in which various by-products which do not participate in the production of hydrogen peroxide and which are present in the working solution in a hydrogen peroxide production process utilizing an anthraquinone method can efficiently be converted into anthraquinones effective as reaction media for the production of hydrogen peroxide.The present invention is concerned with (1) a regeneration method of a working solution wherein at least a part of the unreduced working solution is brought into contact with a catalyst mainly comprising a .gamma.-alumina at a temperature of 40 to 150.degree. C., and (2) another regeneration method of a working solution wherein the working solution is brought into contact with a catalyst mainly comprising a .gamma.-alumina at a temperature of 20 to 150.degree. C. under conditions that a concentration h (mol/liter) of the alkyltetrahydroanthrahydroquinones in the working solution before the catalytic treatment meets the equation(0.0018.times.t-0.0285).times.h
摘要:
A method for preparing hydrogen peroxide in accordance with an anthraquinone method, comprising hydrogenating at least one anthraquinone with a hydrogenation catalyst comprising palladium and at least one alkali metal, supported on a silica carrier, wherein the at least one alkali metal is in an amount of 0.1% to 5 wt % based on the weight of the silica carrier.
摘要:
A hydrogenation catalyst for the production of hydrogen peroxide by the hydrogenation of anthraquinones in accordance with a hydrogen peroxide production process utilizing an anthraquinone method. The catalyst includes palladium supported on a carrier. The carrier comprises spherical silica particles, wherein at least 90 wt % of the silica particles have particle diameters of 10 to 100 .mu.m. The silica particles have an average particle diameter of 30 to 60 .mu.m and a pore volume of 0.4 to 1.0 ml/g. The catalyst has desirable activity, strength, service life and selectivity.
摘要:
The present invention provides a fixed bed reactor for carrying out a mixed gas/liquid phase reaction, wherein the reactor has a piping structure composed of microchannels, the cross-sectional area of the fixed bed is 0.0001 cm2 to 0.008 cm2 and a single or parallely arranged two or more fixed beds, and the reactor has, in addition to the fixed beds, a gas phase distribution portion, a portion for introducing the gas phase to the fixed bed, a liquid phase distribution portion, a portion for introducing the liquid phase to the fixed bed, a packing material introduction portion and a fluid merging portion, a gas/liquid mixed phase reaction process for carrying out a gas/liquid mixed phase reaction using the fixed bed reactor described above, and further a process for producing hydrogen peroxide in which the reaction is started and stopped in a reducing atmosphere, and the present invention further provides a novel fixed bed gas/liquid mixed phase reactor which makes it possible to carry out gas/liquid mixed phase reactions stably and under steady state conditions by using microchannels.
摘要:
The present invention provides a fixed bed reactor for carrying out a mixed gas/liquid phase reaction, wherein the reactor has a piping structure composed of microchannels, the cross-sectional area of the fixed bed is 0.0001 cm2 to 0.008 cm2 and a single or parallely arranged two or more fixed beds, and the reactor has, in addition to the fixed beds, a gas phase distribution portion, a portion for introducing the gas phase to the fixed bed, a liquid phase distribution portion, a portion for introducing the liquid phase to the fixed bed, a packing material introduction portion and a fluid merging portion, a gas/liquid mixed phase reaction process for carrying out a gas/liquid mixed phase reaction using the fixed bed reactor described above, and further a process for producing hydrogen peroxide in which the reaction is started and stopped in a reducing atmosphere, and the present invention further provides a novel fixed bed gas/liquid mixed phase reactor which makes it possible to carry out gas/liquid mixed phase reactions stably and under steady state conditions by using microchannels.
摘要:
Provided is an alkaline developable photosensitive resin composition which does not contain crude particles, has excellent storage stability, can avoid the deterioration of working environments, and contains few substances toxic to human bodies. The alkaline developable photosensitive resin composition is characterized by comprising (A) a resin containing a carboxyl group, (B) a photopolymerization initiator, (C) a compound having at least two ethylenically unsaturated groups per molecule, and (D) a dibasic acid ester.
摘要:
In a hot press molding method for press-molding a heated material and cooling the material while holding the material in a mold, during press molding of the material, shape changes including a portion that curves with respect to a longitudinal direction of the material are molded at longitudinal opposite end portions of the material and resistance to thermal contraction force of the material in the longitudinal direction during cooling is imparted. In one embodiment of the present invention, the shape changes molded on the material during the press molding are minute protrusions provided on surfaces of the longitudinal opposite end portions of the material. The invention makes it possible to suppress thermal contraction of the material during cooling in hot press molding to thereby prevent defects associated therewith.
摘要:
A heat sink including a base section, connection fins, and parallel fins. The base section includes: a first base plate configured to be mounted with a heat generating component on its outer surface; a second base plate disposed to face the first base plate in a parallel manner, configured to be mounted with a heat generating component on its outer surface; and a third base plate disposed perpendicular to the first base plate and the second base plate, which secures the first base plate and the second base plate along a junction line. The base section includes first and second regions arranged in the direction of the junction line. The connection fins are disposed on the first region to connect inner surfaces of the first and second base plates and to be parallel to the third base plate, and the parallel fins are disposed on the second region from an inner surface of the third base plate to be parallel to the first base plate.
摘要:
A gas sensor including a gas sensor element having a first measurement chamber (16); a first pumping cell (11); a second measurement chamber (18) into which a gas to be measured having a controlled oxygen partial pressure is introduced; and a second pumping cell (13) having a second inner pump electrode (13b) and a second counterpart electrode (13c) pump electrode configured to detect a specific gas component. The second inner pump electrode is made of a material that contains, as a principal ingredient, two kinds of Pt particles having different particle sizes and whose particle size ratio measured by a sedimentation particle-size distribution ranges from 1.75 to 14.2. A mixing ratio between large Pt particles and small Pt particles has a mass ratio of 10/90 to 50/50. A 10 kHz-1 Hz resistance value across the second pumping cell at 600° C. is 150Ω or less.
摘要:
There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).