公开(公告)号：US07988835B2

公开(公告)日：2011-08-02

申请号：US11519154

申请日：2006-09-12

申请人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

发明人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C16/00 ,  C23C16/50

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631

摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

摘要翻译： 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（288nm）的比率（Si（288nm）/ H＆bgr）） （288nm）的波长288nm的硅原子和发光强度H＆bgr; 的等离子体发射波长为484nm的氢原子为10.0以下，优选为3.0以下，或0.5以下，形成粒径为20nm以下或10nm以下的硅点（SiD） 在500度的低温下直接在基板（S）上。 在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

公开(公告)号：US07880392B2

公开(公告)日：2011-02-01

申请号：US11586583

申请日：2006-10-26

申请人： Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

发明人： Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

IPC分类号： C23C16/00

CPC分类号： H01J37/32954 ,  H01J37/321 ,  H01J37/32174

摘要： Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.

摘要翻译： 等离子体制造方法和装置，其中多个高频天线布置在等离子体产生室中，并且从高频电源装置（包括电源，相位控制器等）提供的高频电力是 从天线施加到腔室中的气体以产生电感耦合等离子体。 多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。 高频电源装置控制施加到每个天线的高频电压的相位，从而控制感应耦合等离子体的电子温度。

公开(公告)号：US20100189921A1

公开(公告)日：2010-07-29

申请号：US12753379

申请日：2010-04-02

申请人： Hiroshige DEGUCHI ,  Hitoshi Yoneda ,  Kenji Kato ,  Akinori Ebe ,  Yuichi Setsuhara

发明人： Hiroshige DEGUCHI ,  Hitoshi Yoneda ,  Kenji Kato ,  Akinori Ebe ,  Yuichi Setsuhara

IPC分类号： B01J19/08

CPC分类号： C23C16/509 ,  H01J37/32192 ,  H01J37/3222

摘要： A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.

摘要翻译： 使用多个高频天线2生成电感耦合等离子体的等离子体产生方法和装置以及使用该装置的等离子体处理装置。 天线2彼此相同。 通过一个匹配电路5和一个母线3，从天线2共同配置的高频电源4向天线2施加高频电力。母线3被分割为数字 在设置连接到匹配电路5的部分作为参考时，其等于天线的天线。 天线的一端部分通过供电线311,321,331连接到对应部分31,32,33。天线的另一端接地。 调节母线段和供电线的部分的阻抗，使得相同的电流流过天线，并且向天线施加相同的电压。 因此，在对提供给天线2的高频电力进行均匀化的同时产生电感耦合等离子体。

公开(公告)号：US20070193513A1

公开(公告)日：2007-08-23

申请号：US11708058

申请日：2007-02-20

申请人： Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kenji Kato ,  Akinori Ebe ,  Yuichi Setsuhara

发明人： Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kenji Kato ,  Akinori Ebe ,  Yuichi Setsuhara

IPC分类号： C23C16/00

CPC分类号： C23C16/509 ,  H01J37/32192 ,  H01J37/3222

摘要： A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.

摘要翻译： 使用多个高频天线2生成电感耦合等离子体的等离子体产生方法和装置以及使用该装置的等离子体处理装置。 天线2彼此相同。 通过一个匹配电路5和一个母线3，从天线2共同配置的高频电源4向天线2施加高频电力。母线3被划分为多个 在设置连接到匹配电路5的部分作为参考时，其等于天线的天线。 天线的一端部分通过供电线311,321,331连接到对应部分31,32,33。天线的另一端接地。 调节母线段和供电线的部分的阻抗，使得相同的电流流过天线，并且向天线施加相同的电压。 因此，在对提供给天线2的高频电力进行均匀化的同时产生电感耦合等离子体。

公开(公告)号：US20070095287A1

公开(公告)日：2007-05-03

申请号：US11586583

申请日：2006-10-26

申请人： Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

发明人： Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

IPC分类号： C23C16/00

CPC分类号： H01J37/32954 ,  H01J37/321 ,  H01J37/32174

摘要： Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.

摘要翻译： 等离子体制造方法和装置，其中多个高频天线布置在等离子体产生室中，并且从高频电源装置（包括电源，相位控制器等）提供的高频电力是 从天线施加到腔室中的气体以产生电感耦合等离子体。 多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。 高频电源装置控制施加到每个天线的高频电压的相位，从而控制感应耦合等离子体的电子温度。

公开(公告)号：US20070193512A1

公开(公告)日：2007-08-23

申请号：US11707862

申请日：2007-02-20

申请人： Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kenji Kato ,  Akinori Ebe ,  Yuichi Setsuhara

发明人： Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kenji Kato ,  Akinori Ebe ,  Yuichi Setsuhara

IPC分类号： C23C16/00

CPC分类号： C23C16/509 ,  H01J37/32192 ,  H01J37/3222

摘要： One or more high-frequency antennas is allocated to and disposed in one cubic space C having a side of 0.4 [m] in a plasma generating chamber 1 or in each of plural cubic spaces C, each having a side of 0.4 [m], adjacent ones of the plural cubic spaces being continuous to each other without forming a gap therebetween. The total length L [m] of the high-frequency antennas in each of the cubic spaces C is set in a range which satisfies relationships of (0.2/P)

摘要翻译： 在等离子体发生室1中或在具有0.4 [m]侧的多个立方体空间C中的每一个中分配一个或多个高频天线并将其布置在具有0.4 [m]侧的一个立方体C中， 多个立体空间中的相邻的空间彼此连续，而不形成间隙。 每个立方体空间C中的高频天线的总长度L [m]被设定为满足关于电感耦合等离子体产生（0.2 / P）

公开(公告)号：US20070144672A1

公开(公告)日：2007-06-28

申请号：US11586508

申请日：2006-10-26

申请人： Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

发明人： Kenji Kato ,  Hiroshige Deguchi ,  Hitoshi Yoneda ,  Kiyoshi Kubota ,  Akinori Ebe ,  Yuichi Setsuhara

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/509 ,  H01J37/321 ,  H01J37/32183

摘要： Plasma producing method and apparatus as well as plasma processing apparatus including the plasma producing apparatus wherein one or more high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power is applied to a gas in the chamber from the antenna(s) to produce inductively coupled plasma. Impedance of the high-frequency antenna is set in a range of 45 Ω or lower.

摘要翻译： 等离子体制造方法和装置以及包括等离子体制造装置的等离子体处理装置，其中一个或多个高频天线布置在等离子体产生室中，并且高频电力从天线施加到腔室中的气体 s）以产生电感耦合等离子体。 高频天线的阻抗设定在45Ω以下的范围内。

公开(公告)号：US20070144440A1

公开(公告)日：2007-06-28

申请号：US11586504

申请日：2006-10-26

申请人： Hitoshi Yoneda ,  Hiroshige Deguchi ,  Kenji Kato ,  Yuichi Setsuhara

发明人： Hitoshi Yoneda ,  Hiroshige Deguchi ,  Kenji Kato ,  Yuichi Setsuhara

IPC分类号： C23C16/00

CPC分类号： C23C16/509 ,  H01J37/321 ,  H01J37/3211

摘要： Plasma producing method and apparatus as well as plasma processing apparatus utilizing the plasma producing apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a matching box and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device supplies the high-frequency power to each antenna from terminals of the antennas on the same side.

摘要翻译： 等离子体制造方法和装置以及利用等离子体制造装置的等离子体处理装置，其中多个高频天线布置在等离子体产生室中，以及从高频电源装置（包括 电源，匹配盒等）从天线施加到腔室中的气体以产生电感耦合等离子体。 多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。 高频电源装置在同一侧的天线端子向每个天线提供高频电力。

公开(公告)号：US09078336B2

公开(公告)日：2015-07-07

申请号：US12921063

申请日：2009-03-03

申请人： Yuichi Setsuhara ,  Akinori Ebe

发明人： Yuichi Setsuhara ,  Akinori Ebe

IPC分类号： H01Q1/36 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211

摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.

摘要翻译： 本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。 根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管， 以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指抑制电子加速的区域，例如可以用真空或绝缘体形成。 这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

公开(公告)号：US08916034B2

公开(公告)日：2014-12-23

申请号：US13059318

申请日：2009-08-25

申请人： Yuichi Setsuhara ,  Akinori Ebe ,  Jeon Geon Han

发明人： Yuichi Setsuhara ,  Akinori Ebe ,  Jeon Geon Han

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC分类号： H01J37/3408 ,  C23C14/3407 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3411 ,  H01J37/3417

摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.

摘要翻译： 能够高速溅射工艺的薄膜形成溅射系统。 薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在所述目标保持器和所述基板保持器之间施加电压的电源; 设置在目标支架后面的磁控溅射磁体，用于产生具有平行于目标的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。 由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。