Regeneration method of working solution
    1.
    依法登记的发明
    Regeneration method of working solution 失效
    工作液再生方法

    公开(公告)号:USH1787H

    公开(公告)日:1999-02-02

    申请号:US829696

    申请日:1997-03-26

    IPC分类号: C01B15/023 C07C50/18

    CPC分类号: C01B15/023

    摘要: A regeneration method of a working solution is herein disclosed in which various by-products which do not participate in the production of hydrogen peroxide and which are present in the working solution in a hydrogen peroxide production process utilizing an anthraquinone method can efficiently be converted into anthraquinones effective as reaction media for the production of hydrogen peroxide.The present invention is concerned with (1) a regeneration method of a working solution wherein at least a part of the unreduced working solution is brought into contact with a catalyst mainly comprising a .gamma.-alumina at a temperature of 40 to 150.degree. C., and (2) another regeneration method of a working solution wherein the working solution is brought into contact with a catalyst mainly comprising a .gamma.-alumina at a temperature of 20 to 150.degree. C. under conditions that a concentration h (mol/liter) of the alkyltetrahydroanthrahydroquinones in the working solution before the catalytic treatment meets the equation(0.0018.times.t-0.0285).times.h

    摘要翻译: 本文公开了一种工作溶液的再生方法,其中不参与过氧化氢生产的各种副产物在使用蒽醌方法的过氧化氢生产过程中存在于工作溶液中的各种副产物可有效地转化为蒽醌 作为生产过氧化氢的反应介质有效。 本发明涉及(1)一种工作溶液的再生方法,其中至少一部分未还原的工作溶液与主要包含γ-氧化铝的催化剂在40〜150℃的温度下接触, 和(2)工作溶液的另一种再生方法,其中使工作溶液与主要包含γ-氧化铝的催化剂在20至150℃的温度下接触,在浓度h(mol / l) 在催化处理之前的工作溶液中的烷基四氢蒽醌符合方程(0.0018xt-0.0285)xh <0.05,其中t为处理温度(℃),将工作溶液中的烷基四氢加成蒽转化为烷基四氢蒽醌。

    Fixed bed mixed gas/liquid phase reactor and mixed gas/liquid phase reaction process using the same
    4.
    发明授权
    Fixed bed mixed gas/liquid phase reactor and mixed gas/liquid phase reaction process using the same 有权
    固定床混合气/液相反应器和混合气/液相反应过程使用相同

    公开(公告)号:US08632729B2

    公开(公告)日:2014-01-21

    申请号:US13124228

    申请日:2009-10-15

    IPC分类号: B01J8/02 B01J35/02

    摘要: The present invention provides a fixed bed reactor for carrying out a mixed gas/liquid phase reaction, wherein the reactor has a piping structure composed of microchannels, the cross-sectional area of the fixed bed is 0.0001 cm2 to 0.008 cm2 and a single or parallely arranged two or more fixed beds, and the reactor has, in addition to the fixed beds, a gas phase distribution portion, a portion for introducing the gas phase to the fixed bed, a liquid phase distribution portion, a portion for introducing the liquid phase to the fixed bed, a packing material introduction portion and a fluid merging portion, a gas/liquid mixed phase reaction process for carrying out a gas/liquid mixed phase reaction using the fixed bed reactor described above, and further a process for producing hydrogen peroxide in which the reaction is started and stopped in a reducing atmosphere, and the present invention further provides a novel fixed bed gas/liquid mixed phase reactor which makes it possible to carry out gas/liquid mixed phase reactions stably and under steady state conditions by using microchannels.

    摘要翻译: 本发明提供了一种用于进行混合气/液相反应的固定床反应器,其中反应器具有由微通道组成的管道结构,固定床的横截面积为0.0001cm 2至0.008cm 2,单个或平行 设置两个以上的固定床,除了固定床之外,反应器还具有气相分配部,将气相引入固定床的部分,液相分配部,引导液相的部分 固定床,填充材料导入部和流体合流部,使用上述固定床反应器进行气/液混合相反应的气/液混合相反应方法,进一步制造过氧化氢 其中反应在还原气氛中开始和停止,并且本发明还提供了一种新的固定床气/液混合相反应器,其使得可以携带 通过使用微通道在稳定状态下稳定地进行气/液混合相反应。

    FIXED BED MIXED GAS/LIQUID PHASE REACTOR AND MIXED GAS/LIQUID PHASE REACTION PROCESS USING THE SAME
    5.
    发明申请
    FIXED BED MIXED GAS/LIQUID PHASE REACTOR AND MIXED GAS/LIQUID PHASE REACTION PROCESS USING THE SAME 有权
    固定床混合气/液相反应器和混合气/液相反应方法

    公开(公告)号:US20110200519A1

    公开(公告)日:2011-08-18

    申请号:US13124228

    申请日:2009-10-15

    IPC分类号: C01B15/029 B01J8/02 B01J8/04

    摘要: The present invention provides a fixed bed reactor for carrying out a mixed gas/liquid phase reaction, wherein the reactor has a piping structure composed of microchannels, the cross-sectional area of the fixed bed is 0.0001 cm2 to 0.008 cm2 and a single or parallely arranged two or more fixed beds, and the reactor has, in addition to the fixed beds, a gas phase distribution portion, a portion for introducing the gas phase to the fixed bed, a liquid phase distribution portion, a portion for introducing the liquid phase to the fixed bed, a packing material introduction portion and a fluid merging portion, a gas/liquid mixed phase reaction process for carrying out a gas/liquid mixed phase reaction using the fixed bed reactor described above, and further a process for producing hydrogen peroxide in which the reaction is started and stopped in a reducing atmosphere, and the present invention further provides a novel fixed bed gas/liquid mixed phase reactor which makes it possible to carry out gas/liquid mixed phase reactions stably and under steady state conditions by using microchannels.

    摘要翻译: 本发明提供了一种用于进行混合气/液相反应的固定床反应器,其中反应器具有由微通道组成的管道结构,固定床的横截面积为0.0001cm 2至0.008cm 2,单个或平行 设置两个以上的固定床,除了固定床之外,反应器还具有气相分配部,将气相引入固定床的部分,液相分配部,引导液相的部分 固定床,填充材料导入部和流体合流部,使用上述固定床反应器进行气/液混合相反应的气/液混合相反应方法,进一步制造过氧化氢 其中反应在还原气氛中开始和停止,并且本发明还提供了一种新的固定床气/液混合相反应器,其使得可以携带 通过使用微通道在稳定状态下稳定地进行气/液混合相反应。

    ALKALINE-DEVELOPABLE PHOTOSENSITIVE RESIN COMPOSITION, DRY FILM, CURED ARTICLE, AND PRINTED WIRING BOARD
    6.
    发明申请
    ALKALINE-DEVELOPABLE PHOTOSENSITIVE RESIN COMPOSITION, DRY FILM, CURED ARTICLE, AND PRINTED WIRING BOARD 审中-公开
    碱性可开发的感光树脂组合物,干膜,固化物和印刷线路板

    公开(公告)号:US20150079505A1

    公开(公告)日:2015-03-19

    申请号:US14394179

    申请日:2012-08-15

    申请人: Kenji Kato

    发明人: Kenji Kato

    IPC分类号: G03F7/038

    摘要: Provided is an alkaline developable photosensitive resin composition which does not contain crude particles, has excellent storage stability, can avoid the deterioration of working environments, and contains few substances toxic to human bodies. The alkaline developable photosensitive resin composition is characterized by comprising (A) a resin containing a carboxyl group, (B) a photopolymerization initiator, (C) a compound having at least two ethylenically unsaturated groups per molecule, and (D) a dibasic acid ester.

    摘要翻译: 本发明提供一种不含粗粒子的碱性显影性感光性树脂组合物,具有优良的储存稳定性,能够避免工作环境恶化,并且含有少量对人体有毒的物质。 碱性显影性感光性树脂组合物的特征在于,包含(A)含有羧基的树脂,(B)光聚合引发剂,(C)每分子具有至少2个烯属不饱和基团的化合物,(D)二元酸酯 。

    HOT PRESS MOLDING METHOD, ARTICLE MOLDED BY HOT PRESS MOLDING, AND MOLD FOR HOT PRESSING
    7.
    发明申请
    HOT PRESS MOLDING METHOD, ARTICLE MOLDED BY HOT PRESS MOLDING, AND MOLD FOR HOT PRESSING 审中-公开
    热压成型方法,通过热压成型制成的模具和热压模具

    公开(公告)号:US20140302341A1

    公开(公告)日:2014-10-09

    申请号:US14353624

    申请日:2011-12-26

    IPC分类号: B21J5/02

    摘要: In a hot press molding method for press-molding a heated material and cooling the material while holding the material in a mold, during press molding of the material, shape changes including a portion that curves with respect to a longitudinal direction of the material are molded at longitudinal opposite end portions of the material and resistance to thermal contraction force of the material in the longitudinal direction during cooling is imparted. In one embodiment of the present invention, the shape changes molded on the material during the press molding are minute protrusions provided on surfaces of the longitudinal opposite end portions of the material. The invention makes it possible to suppress thermal contraction of the material during cooling in hot press molding to thereby prevent defects associated therewith.

    摘要翻译: 在加热材料的压制成型并将材料保持在模具中的同时冷却材料的热压成型方法中,在材料的压制成型期间,包括相对于材料的纵向方向弯曲的部分的形状变化 在材料的纵向相对端部处,并且赋予材料在冷却期间在纵向方向上的热收缩力的能力。 在本发明的一个实施例中,在压制成型期间模制在材料上的形状变化是在材料的纵向相对端部的表面上设置的微小突起。 本发明可以抑制热压成型时的冷却过程中材料的热收缩,从而防止与其相关的缺陷。

    HEAT SINK, AND METHOD FOR PRODUCING SAME
    8.
    发明申请
    HEAT SINK, AND METHOD FOR PRODUCING SAME 有权
    散热器及其制造方法

    公开(公告)号:US20130081798A1

    公开(公告)日:2013-04-04

    申请号:US13700566

    申请日:2011-03-25

    IPC分类号: F28F3/04

    摘要: A heat sink including a base section, connection fins, and parallel fins. The base section includes: a first base plate configured to be mounted with a heat generating component on its outer surface; a second base plate disposed to face the first base plate in a parallel manner, configured to be mounted with a heat generating component on its outer surface; and a third base plate disposed perpendicular to the first base plate and the second base plate, which secures the first base plate and the second base plate along a junction line. The base section includes first and second regions arranged in the direction of the junction line. The connection fins are disposed on the first region to connect inner surfaces of the first and second base plates and to be parallel to the third base plate, and the parallel fins are disposed on the second region from an inner surface of the third base plate to be parallel to the first base plate.

    摘要翻译: 散热器,包括基部,连接翅片和平行翅片。 基部包括:构造成在其外表面上安装有发热部件的第一基板; 以平行方式设置为与所述第一基板相对地配置的第二基板,构造成在其外表面上安装有发热部件; 以及垂直于第一基板和第二基板设置的第三基板,其将第一基板和第二基板沿着接合线固定。 基部包括在接合线的方向上布置的第一和第二区域。 连接翅片设置在第一区域上以连接第一和第二基板的内表面并平行于第三基板,并且平行翅片从第三基板的内表面设置在第二区域上 平行于第一基板。

    Gas sensor and method for manufacturing the same
    9.
    发明授权
    Gas sensor and method for manufacturing the same 有权
    气体传感器及其制造方法

    公开(公告)号:US08377274B2

    公开(公告)日:2013-02-19

    申请号:US12463625

    申请日:2009-05-11

    IPC分类号: G01N27/407

    CPC分类号: G01N27/4075

    摘要: A gas sensor including a gas sensor element having a first measurement chamber (16); a first pumping cell (11); a second measurement chamber (18) into which a gas to be measured having a controlled oxygen partial pressure is introduced; and a second pumping cell (13) having a second inner pump electrode (13b) and a second counterpart electrode (13c) pump electrode configured to detect a specific gas component. The second inner pump electrode is made of a material that contains, as a principal ingredient, two kinds of Pt particles having different particle sizes and whose particle size ratio measured by a sedimentation particle-size distribution ranges from 1.75 to 14.2. A mixing ratio between large Pt particles and small Pt particles has a mass ratio of 10/90 to 50/50. A 10 kHz-1 Hz resistance value across the second pumping cell at 600° C. is 150Ω or less.

    摘要翻译: 一种气体传感器,包括具有第一测量室(16)的气体传感器元件; 第一泵送单元(11); 引入具有受控氧分压的待测气体的第二测量室(18); 以及具有第二内泵电极(13b)和配置成检测特定气体成分的第二配对电极(13c)泵浦电极的第二泵浦电池(13)。 第二内泵电极由含有不同粒径的两种Pt颗粒作为主要成分的材料制成,其沉降粒度分布测定的粒径比为1.75〜14.2。 大Pt颗粒和小Pt颗粒之​​间的混合比的质量比为10/90至50/50。 在600℃下跨越第二抽滤单元的10kHz-1Hz电阻值为150&OHgr; 或更少。

    Silicon dot forming method and silicon dot forming apparatus
    10.
    发明授权
    Silicon dot forming method and silicon dot forming apparatus 失效
    硅点形成方法和硅点形成装置

    公开(公告)号:US07988835B2

    公开(公告)日:2011-08-02

    申请号:US11519154

    申请日:2006-09-12

    摘要: There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

    摘要翻译: 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气(或氢气和含硅烷气体)供给到设置有硅溅射靶(例如,靶30)的真空室(1)中,或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室(1)中,向气体施加高频功率,从而产生等离子体,使得发射强度Si(288nm)的比率(Si(288nm)/ H&bgr)) (288nm)的波长288nm的硅原子和发光强度H&bgr; 的等离子体发射波长为484nm的氢原子为10.0以下,优选为3.0以下,或0.5以下,形成粒径为20nm以下或10nm以下的硅点(SiD) 在500度的低温下直接在基板(S)上。 在等离子体中(如果存在硅溅射靶,则具有化学溅射)。