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    Piezoelectric thin film element and piezoelectric thin film device including the same
    1.
    发明授权
    Piezoelectric thin film element and piezoelectric thin film device including the same 有权
    压电薄膜元件和包括该压电薄膜元件的压电薄膜器件

    公开(公告)号：US08310135B2

    公开(公告)日：2012-11-13

    申请号：US12797340

    申请日：2010-06-09

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    IPC分类号： H01L41/187

    CPC分类号： H01L41/18

    摘要： A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.

    摘要翻译： 提供了一种压电薄膜元件，其包括在基板上：由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆lt; lE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z表示的压电薄膜 = 1）; 其上层叠有上电极，其中，所述压电薄膜具有假立方晶体，四方晶体或正交晶体中的任一种的晶体结构，或者具有至少两个所述伪晶体的晶体结构， 立方晶体，四方晶体或正交晶体，并且在这样的晶体结构中，（001）取向的（001）取向晶粒与（111）方向取向的（111）取向晶粒共存， 由晶粒的晶轴和衬底表面的法线中的至少一个形成的角度设定在0°至10°的范围内。

    Piezoelectric thin film element, and piezoelectric thin film device
    3.
    发明授权
    Piezoelectric thin film element, and piezoelectric thin film device 有权
    压电薄膜元件和压电薄膜器件

    公开(公告)号：US08310136B2

    公开(公告)日：2012-11-13

    申请号：US12814544

    申请日：2010-06-14

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    IPC分类号： H01L41/187

    CPC分类号： H01L41/316 ,  H01L41/1873

    摘要： A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (NaxKyLiz)NbO3 (0≦x 1≦, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and an upper electrode disposed on a substrate, wherein the piezoelectric thin film has a crystal structure of a pseudo-cubic crystal or a tetragonal crystal or an orthorhombic crystal, or has a composition in which one of these crystals exists or at least two or more of them coexist, and is preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and in the ratio of component (001) to component (111), volume fraction of the component (001) falls within a range of 60% or more and 100% or less, and the volume fraction of the component (111) falls within a range of 0% or more and 40% or less, in a case that the total of the component (001) and the component (111) is set to be 100%.

    摘要翻译： 一种压电薄膜元件，包括具有至少一个下电极的压电薄膜层压体，由通式（NaxKyLiz）NbO 3表示的压电薄膜（0＆amp; nlE; x 1＆nlE; 0＆nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2 ，x + y + z = 1），以及设置在基板上的上电极，其中，所述压电薄膜具有假立方晶体或四方晶体或正交晶体的晶体结构，或者具有其中一个 存在这些晶体，或者其中至少两种以上共存，并且优选地定向为小于或等于这些晶体的两个轴的特定轴，并且以组分（001）与组分（111）的比例，体积分数 的组分（001）的含量在60％以上且100％以下的范围内，成分（111）的体积分数在0％以上且40％以下的范围内，在 组分（001）和组分（111）的总和被设置为100％。

    PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE INCLUDING THE SAME
    5.
    发明申请
    PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE INCLUDING THE SAME 有权
    压电薄膜元件和包括其的压电薄膜器件

    公开(公告)号：US20100314972A1

    公开(公告)日：2010-12-16

    申请号：US12797340

    申请日：2010-06-09

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

    IPC分类号： H01L41/04

    CPC分类号： H01L41/18

    摘要： A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.

    摘要翻译： 提供了一种压电薄膜元件，其包括在基板上：由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆lt; lE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z表示的压电薄膜 = 1）; 其上层叠有上电极，其中，所述压电薄膜具有假立方晶体，四方晶体或正交晶体中的任一种的晶体结构，或者具有至少两个所述伪晶体的晶体结构， 立方晶体，四方晶体或正交晶体，并且在这样的晶体结构中，（001）取向的（001）取向晶粒与（111）方向取向的（111）取向晶粒共存， 由晶粒的晶轴和衬底表面的法线中的至少一个形成的角度设定在0°至10°的范围内。

    Piezoelectric thin film element
    6.
    发明授权
    Piezoelectric thin film element 有权
    压电薄膜元件

    公开(公告)号：US08058779B2

    公开(公告)日：2011-11-15

    申请号：US12588484

    申请日：2009-10-16

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

    IPC分类号： H01L41/187

    CPC分类号： H01L41/047 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

    摘要： A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.

    摘要翻译： 压电薄膜元件包括底电极，压电层和衬底上的顶电极。 压电层包括由（NaxKyLiz）NbO 3（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的钙钛矿型氧化物， 电极包括算术平均粗糙度Ra不大于0.86nm的表面粗糙度或均方根粗糙度Rms不大于1.1nm的表面粗糙度。

    Piezoelectric thin film element
    8.
    发明申请
    Piezoelectric thin film element 审中-公开
    压电薄膜元件

    公开(公告)号：US20120025668A1

    公开(公告)日：2012-02-02

    申请号：US13137580

    申请日：2011-08-26

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

    IPC分类号： H01L41/047 ,  H01L41/113 ,  H01L41/09

    CPC分类号： H01L41/047 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

    摘要： A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.

    摘要翻译： 压电薄膜元件包括底电极，压电层和衬底上的顶电极。 作为主相，压电体层包含钙钛矿型氧化物。 底部电极在算术平均粗糙度Ra中的表面粗糙度不大于0.86nm，均方根粗糙度Rms下的表面粗糙度不大于1.1nm。 底部电极在垂直于衬底的方向上具有（111）优先取向。