公开(公告)号：US06839890B2

公开(公告)日：2005-01-04

申请号：US10247947

申请日：2002-09-20

申请人： Mitsuro Sugita ,  Kenji Saitoh ,  Kenji Yamazoe

发明人： Mitsuro Sugita ,  Kenji Saitoh ,  Kenji Yamazoe

IPC分类号： G03F1/42 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F1/76 ,  G03F7/20 ,  H01L21/027 ,  G06K17/50

CPC分类号： G03F1/36

摘要： A method for forming, on a mask, a mask pattern used for exposure. The mask pattern includes a first pattern that blends plural types of patterns, and second pattern that is smaller in size than the first pattern. The mask pattern is arranged on the mask so that the first pattern may be resolved and the second pattern is restrained from being resolved. The method includes the steps of classifying the first pattern into one of a periodic pattern having at least three elements having two equal intervals in at least one direction among two orthogonal directions, an isolated pair pattern that does not belong to the periodic pattern and includes a pair of elements arranged in at least one direction among the two orthogonal directions, and an isolated element that does not belong to the isolated pair pattern and includes only one element without constituting any pair in any of the two orthogonal directions, arranging the second pattern for the isolated pair pattern, arranging the second pattern for the isolated element, and arranging the second pattern for the periodic pattern.

摘要翻译： 一种在掩模上形成用于曝光的掩模图案的方法。 掩模图案包括混合多种类型的图案的第一图案和尺寸小于第一图案的第二图案。 掩模图案被布置在掩模上，使得可以解析第一图案并且限制第二图案被解析。 该方法包括以下步骤：将第一图案分类为在两个正交方向之间的至少一个方向上具有至少三个具有两个等间隔的元件的周期性图案之一，不属于周期性图案的隔离对图案，并且包括 在两个正交方向上沿至少一个方向布置的一对元件，以及不属于隔离对图案并且仅包含一个元件而不在两个正交方向中的任一个中构成任何对的隔离元件，将第二图案设置为 隔离对图案，布置用于隔离元件的第二图案，并且布置用于周期性图案的第二图案。

公开(公告)号：US07217503B2

公开(公告)日：2007-05-15

申请号：US10132001

申请日：2002-04-24

申请人： Kenji Saitoh ,  Akiyoshi Suzuki ,  Kenji Yamazoe

发明人： Kenji Saitoh ,  Akiyoshi Suzuki ,  Kenji Yamazoe

IPC分类号： G03F7/20

CPC分类号： G03F1/30 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70466

摘要： An exposure method comprising the steps of forming onto a mask that arranges a pattern of a contact hole and a plurality of patterns each being smaller than the contact hole pattern, and illuminating the mask using plural kinds of light so as to resolve the desired pattern without the smaller patterns on a target via a projection optical system.

摘要翻译： 一种曝光方法，包括以下步骤：形成掩模，所述掩模布置接触孔和多个图案的图案，每个图案都小于接触孔图案，并且使用多种光照射所述掩模，以便解析所需图案而无需 通过投影光学系统在目标上的较小图案。

公开(公告)号：US07214453B2

公开(公告)日：2007-05-08

申请号：US10783218

申请日：2004-02-20

申请人： Kenji Yamazoe ,  Kenji Saitoh ,  Akiyoshi Suzuki

发明人： Kenji Yamazoe ,  Kenji Saitoh ,  Akiyoshi Suzuki

IPC分类号： G03F1/00

CPC分类号： G03F7/70433 ,  G03F1/36

摘要： A mask arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern so that where a virtual lattice is assumed which has a lattice point located at a center of the predetermined pattern, a center of the auxiliary pattern is offset from the lattice point of the virtual lattice.

摘要翻译： 掩模布置预定图案和小于预定图案的辅助图案，使得假定具有位于预定图案的中心的格子点的虚拟网格，辅助图案的中心偏离 虚拟网格。

公开(公告)号：US07399558B2

公开(公告)日：2008-07-15

申请号：US10896538

申请日：2004-07-22

申请人： Kenji Yamazoe ,  Kenji Saitoh

发明人： Kenji Yamazoe ,  Kenji Saitoh

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/36

摘要： A mask manufacturing method suitable for an exposure method wherein a mask on which a desired pattern and a supplementary pattern with formations smaller than those of the desired pattern are arrayed is illuminated, and the light which passed through the mask onto a member to be exposed is projected via a projection optical system, said method comprising a selecting step for selecting one of the following three supplementary patterns, a first supplementary pattern wherein said supplementary pattern is disposed at a position where a line extending in the vertical direction as to the pitch direction from a certain desired pattern hole of said desired pattern, and a line connecting the supplementary pattern hole closest to said certain desired pattern hole in the vertical direction with said certain desired pattern hole, intersect at an angle of 0°, a second supplementary pattern wherein said angle is 0° or more but less than 45°, and a third supplementary pattern wherein said supplementary pattern supplementary pattern is disposed at a position where said is disposed at a position where said angle is 45°.

摘要翻译： 照射适用于曝光方法的掩模制造方法，其中排列有期望图案和具有小于期望图案的图案的辅助图案的掩模，并且将通过掩模的光穿过待暴露的构件是 通过投影光学系统投影，所述方法包括选择步骤，用于选择以下三个补充图案中的一个：第一补充图案，其中所述辅助图案设置在从垂直方向延伸的关于俯仰方向的线的位置 所述期望图案的特定期望图形孔和将所述特定所需图案孔最靠近所述特定期望图案孔的所述图案孔与所述特定所需图案孔连接的线以0°的角度相交，第二辅助图案，其中所述 辅助图案设置在所述角度为0°以上且小于45°的位置 °和第三辅助图案，其中所述辅助图案设置在所述角度为45°的位置。

公开(公告)号：US07107573B2

公开(公告)日：2006-09-12

申请号：US10251581

申请日：2002-09-20

申请人： Kenji Yamazoe ,  Akiyoshi Suzuki ,  Kenji Saitoh

发明人： Kenji Yamazoe ,  Akiyoshi Suzuki ,  Kenji Saitoh

IPC分类号： G03F9/00 ,  G03F7/00 ,  G03B27/54

CPC分类号： G03F1/36 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441

摘要： A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system includes the steps of forming data for the predetermined pattern, forming data for the auxiliary pattern, and setting the illumination condition for defining an effective light source of illumination using the plural kinds of light.

公开(公告)号：US20050037267A1

公开(公告)日：2005-02-17

申请号：US10896538

申请日：2004-07-22

申请人： Kenji Yamazoe ,  Kenji Saitoh

发明人： Kenji Yamazoe ,  Kenji Saitoh

IPC分类号： G03C5/00 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/82 ,  H01L21/822 ,  H01L27/04

CPC分类号： G03F1/36

摘要： A mask manufacturing method suitable for an exposure method wherein a mask on which a desired pattern and a supplementary pattern with formations smaller than those of the desired pattern are arrayed is illuminated, and the light which passed through the mask onto a member to be exposed is projected via a projection optical system, said method comprising a selecting step for selecting one of the following three supplementary patterns, a first supplementary pattern wherein said supplementary pattern is disposed at a position where a line extending in the vertical direction as to the pitch direction from a certain desired pattern hole of said desired pattern, and a line connecting the supplementary pattern hole closest to said certain desired pattern hole in the vertical direction with said certain desired pattern hole, intersect at an angle of 0°, a second supplementary pattern wherein said supplementary pattern is disposed at a position where said angle is 0° or more but less than 45°, and a third supplementary pattern wherein said supplementary pattern is disposed at a position where said angle is 45°.

摘要翻译： 照射适用于曝光方法的掩模制造方法，其中排列有期望图案和具有小于期望图案的图案的辅助图案的掩模，并且将通过掩模的光穿过待暴露的构件是 通过投影光学系统投影，所述方法包括选择步骤，用于选择以下三个补充图案中的一个：第一补充图案，其中所述辅助图案设置在从垂直方向延伸的关于俯仰方向的线的位置 所述期望图案的特定期望图形孔和将所述特定所需图案孔最靠近所述特定期望图案孔的所述图案孔与所述特定所需图案孔连接的线以0°的角度相交，第二辅助图案，其中所述 辅助图案设置在所述角度为0°以上且小于45°的位置 °和第三辅助图案，其中所述辅助图案设置在所述角度为45°的位置。

公开(公告)号：US08163448B2

公开(公告)日：2012-04-24

申请号：US12685368

申请日：2010-01-11

申请人： Manabu Hakko ,  Kenji Yamazoe

发明人： Manabu Hakko ,  Kenji Yamazoe

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70958 ,  G02B1/11 ,  G02B27/0012

摘要： The present invention provides a method of determining a structure of an antireflection coating formed on a substrate as an exposure target of an exposure apparatus, the method comprising steps of calculating, an intensity distribution of light diffracted by an original, based on information of an effective light source formed on a pupil plane of a projection optical system, and information of an original pattern, extracting diffracted light having an intensity of not less than a threshold from the intensity distribution calculated in the calculating step, and determining the structure of the antireflection coating, formed on the substrate, such that a reflectance of the antireflection coating falls within a target range when an incident angle of the diffracted light, which has the intensity of not less than the threshold and is extracted in the extracting step, on the antireflection coating formed on the substrate is an input.

摘要翻译： 本发明提供一种确定作为曝光装置的曝光对象的基板上形成的抗反射涂层的结构的方法，所述方法包括以下步骤：基于有效的信息计算由原稿衍射的光的强度分布 形成在投影光学系统的光瞳平面上的光源和原始图案的信息，从计算步骤计算的强度分布中提取具有不小于阈值的强度的衍射光，并确定抗反射涂层的结构 形成在基板上，使得当具有不小于阈值的强度并且在提取步骤中提取的衍射光的入射角在抗反射涂层上时，抗反射涂层的反射率落在目标范围内 形成在基板上的是输入。

公开(公告)号：US07821648B2

公开(公告)日：2010-10-26

申请号：US12342631

申请日：2008-12-23

申请人： Kenji Yamazoe ,  Yuki Oshima

发明人： Kenji Yamazoe ,  Yuki Oshima

IPC分类号： G01B11/02

CPC分类号： G01B11/255 ,  G01B11/2441 ,  G01M11/025 ,  G01M11/0271

摘要： A measurement method for measuring a shape of a target using an interference pattern includes the steps of converting a first interference pattern into a first shape of the target (S103 to S105), obtaining a second interference pattern at a position where the target moves in an optical axis direction of the reference surface (S107, S108), unwrapping the second interference pattern after aligning a phase of the first interference pattern with a phase of the second interference pattern (S109), converting the unwrapped second interference pattern into a second shape of the target (S110), determining whether or not the first shape of the target coincides with the second shape (S111), and calculating the shape of the target by adding the integral multiple of a wavelength of the light source to the unwrapped second interference pattern if the first shape does not coincide with the second shape (S112).

摘要翻译： 使用干涉图案测量目标的形状的测量方法包括以下步骤：将第一干涉图案转换成目标的第一形状（S103至S105），在目标移动的位置获得第二干涉图案 参考面的光轴方向（S107，S108），在将第一干涉图案的相位与第二干涉图案的相位对准后，将第二干涉图案解包（S109），将展开后的第二干涉图案转换为 目标（S110），确定目标的第一形状是否与第二形状一致（S111），并且通过将光源的波长的整数倍相加于展开的第二干涉图案来计算目标的形状 如果第一形状与第二形状不一致（S112）。

公开(公告)号：US07675629B2

公开(公告)日：2010-03-09

申请号：US11851029

申请日：2007-09-06

申请人： Yumiko Ohsaki ,  Yasuhiro Sawada ,  Kenji Yamazoe ,  Seiji Takeuchi

发明人： Yumiko Ohsaki ,  Yasuhiro Sawada ,  Kenji Yamazoe ,  Seiji Takeuchi

IPC分类号： G01B9/02

CPC分类号： G03F7/70566 ,  G02B27/0025 ,  G03F7/706

摘要： An exposure apparatus including an illumination system which illuminates an original, and projection optics which project a pattern of the original illuminated by the illumination system onto a substrate. The apparatus includes an interferometer which forms an interference pattern including aberration information on the projection optics using a polarized light beam emitted from the illumination system, in which the interferometer is a common path interferometer in which two light beams forming interference pattern pass along a path in the projection optics, and a processor which calculates optical characteristics of the projection optics on the basis of the interference pattern formed by the interferometer. The illumination system including a polarization controller which sequentially generates at least three difference polarized light beams with respective polarization states different from each other. The processor separates first aberration and second aberration from wavefront aberration represented by the interference patterns sequentially formed by the interferometer using the at least three different polarized light beams, by calculating a data of the interference patterns, the first aberration being aberration which does not change dependent on a polarization state of polarized light beam entering the projection optics. The second aberration is aberration which changes dependent on the polarization state of the polarized light beam entering the projection optics.

摘要翻译： 一种曝光装置，包括照亮原稿的照明系统，以及投影光学元件，其将由照明系统照射的原稿的图案投影到基板上。 该装置包括干涉仪，其使用从照明系统发射的偏振光形成包括投影光学器件上的像差信息的干涉图案，其中干涉仪是公共路径干涉仪，其中形成干涉图案的两个光束沿着路径 投影光学器件和基于由干涉仪形成的干涉图案来计算投影光学元件的光学特性的处理器。 所述照明系统包括偏振控制器，其顺序地产生具有彼此不同的各自偏振状态的至少三个差分偏振光束。 处理器通过计算干涉图案的数据，使用至少三个不同的偏振光束分离由干涉仪顺序形成的干涉图案所表示的波前像差的第一像差和第二像差，第一像差是不依赖于变化的像差 在入射到投影光学器件的偏振光束的偏振状态下。 第二像差是根据进入投影光学器件的偏振光束的偏振状态而变化的像差。

公开(公告)号：US07359033B2

公开(公告)日：2008-04-15

申请号：US11363038

申请日：2006-02-28

申请人： Kenji Yamazoe

发明人： Kenji Yamazoe

IPC分类号： G03B27/42

CPC分类号： G03F7/70125 ,  G03F1/00 ,  G03F7/70566

摘要： An exposure method for exposing an image of a mask pattern onto a plate via a projection optical system. The method includes a step of illuminating one of a binary mask and an attenuated phase shifting mask, which has a contact hole pattern and an auxiliary pattern, by utilizing light from a light source and an illumination optical system so that the contact hole pattern can be resolved, but a resolution of the auxiliary pattern is restrained. The illuminating step uses an off-axis illumination that is polarized in a tangential direction when a value that is calculated by normalizing half the length of an interval between centers of the auxiliary pattern and the contact hole pattern that are adjacent to each other by λ/NA is 0.25×√{square root over (2)} or smaller, where λ is a wavelength of the light, and NA is a numerical aperture of the projection optical system at an image side.

摘要翻译： 一种用于通过投影光学系统将掩模图案的图像曝光到印版上的曝光方法。 该方法包括通过利用来自光源和照明光学系统的光来照亮具有接触孔图案和辅助图案的二进制掩模和衰减相移掩模之一的步骤，使得接触孔图案可以 解决了，但辅助模式的分辨率受到限制。 照明步骤使用沿切线方向极化的离轴照明，当通过将辅助图案的中心与接触孔图案之间的间隔的长度的一半归一化为λ/ NA是0.25×{平方根超过（2或更小，其中λ是光的波长，NA是投影光学系统在像侧的数值孔径）。