公开(公告)号：US20100047702A1

公开(公告)日：2010-02-25

申请号：US12610907

申请日：2009-11-02

申请人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03F7/20 ,  G03B27/32

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US20080182211A1

公开(公告)日：2008-07-31

申请号：US11831622

申请日：2007-07-31

申请人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura

发明人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura

IPC分类号： G03B27/32 ,  G03F7/26

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US20110242513A1

公开(公告)日：2011-10-06

申请号：US13159055

申请日：2011-06-13

申请人： Kunie OGATA ,  Masahide Tadokoro ,  Tsuyoshi Shibata ,  Shinichi Shinozuka

发明人： Kunie OGATA ,  Masahide Tadokoro ,  Tsuyoshi Shibata ,  Shinichi Shinozuka

IPC分类号： G03B27/42

CPC分类号： G03F7/38 ,  H01L21/67225 ,  H01L21/67248

摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

摘要翻译： 基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度 在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件 从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到 形成一个预先 确定模式。

公开(公告)号：US20090269686A1

公开(公告)日：2009-10-29

申请号：US12426600

申请日：2009-04-20

申请人： Kunie OGATA ,  Masahide TADOKORO ,  Tsuyoshi SHIBATA ,  Shinichi SHINOZUKA

发明人： Kunie OGATA ,  Masahide TADOKORO ,  Tsuyoshi SHIBATA ,  Shinichi SHINOZUKA

IPC分类号： G03C5/00 ,  G03B27/52

CPC分类号： G03F7/38 ,  H01L21/67225 ,  H01L21/67248

摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

摘要翻译： 基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度 在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件 从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到 形成一个预先 确定模式。

公开(公告)号：US20130057836A1

公开(公告)日：2013-03-07

申请号：US13598924

申请日：2012-08-30

申请人： Tomohiro NAKASHIMA ,  Shin INOUE ,  Yoshitaka HARA ,  Izumi HASEGAWA ,  Kunie OGATA ,  Takuya MORI

发明人： Tomohiro NAKASHIMA ,  Shin INOUE ,  Yoshitaka HARA ,  Izumi HASEGAWA ,  Kunie OGATA ,  Takuya MORI

IPC分类号： G03B27/52

CPC分类号： H01L21/67288

摘要： The present invention is a substrate treatment apparatus for performing solution treatment on a substrate, performing post-treatment in a treatment module subsequent to the solution treatment, including: a solution treatment section including a plurality of nozzles prepared for respective kinds of treatment solutions corresponding to lots of substrates; a transfer mechanism for transferring the substrate; a monitoring section monitoring whether there is a failure in discharge of the treatment solution in the nozzle; and a control unit outputting a control signal to prohibit the solution treatment in the solution treatment section for a substrate scheduled to be treated using a nozzle determined to have a failure by the monitoring section and to perform the solution treatment in the solution treatment section for a substrate scheduled to be treated using a nozzle other than the nozzle determined to have a failure.

摘要翻译： 本发明是一种在基板上进行固溶处理的基板处理装置，在固溶处理后的处理模块中进行后处理，其特征在于，包括：固溶处理部，其具有为各种对应于 大量的底物; 用于转移衬底的转移机构; 监视部，监视喷嘴中处理液的排出是否失败; 以及控制单元，其输出控制信号，以禁止在待处理的基板的固溶处理部中进行固溶处理，所述基板通过由所述监视部确定为具有故障的喷嘴进行处理，并且在所述固溶处理部中执行所述固溶处理 预定使用被确定为失效的喷嘴以外的喷嘴进行处理的基板。

公开(公告)号：US20080142508A1

公开(公告)日：2008-06-19

申请号：US11875239

申请日：2007-10-19

申请人： Megumi JYOUSAKA ,  Shinichi SHINOZUKA ,  Kunie OGATA

发明人： Megumi JYOUSAKA ,  Shinichi SHINOZUKA ,  Kunie OGATA

IPC分类号： H05B1/00 ,  G05D23/00 ,  G06F19/00

CPC分类号： G05D23/1931 ,  H01L21/67248

摘要： In the present invention, a thermal plate of a heating unit is divided into a plurality of thermal plate regions, and a temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting a temperature within the thermal plate can be set for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to a photolithography process are measured, and, from an in-plane tendency of the measured line widths, an in-plane tendency improvable by temperature correction and an unimprovable in-plane tendency are calculated using a Zernike polynomial. An average remaining tendency of the improvable in-plane tendency after improvement obtained in advance is added to the unimprovable in-plane tendency to estimate an in-plane tendency of the line widths within the substrate after change of temperature setting.

摘要翻译： 在本发明中，加热单元的热板被分成多个热板区域，并且可以为每个热板区域设定温度。 可以对热板的每个热板区域设定用于调节热板内的温度的温度校正值。 测量经过光刻工艺的衬底内的线宽，并且根据所测量的线宽的面内趋势，通过温度校正提高的面内趋势和不可估量的面内趋势，使用 一个Zernike多项式。 将预先获得的改进后的面内趋势的平均剩余趋势加到不可估量的平面内趋势中，以估计在温度设定变化之后衬底内线宽的面内趋势。

公开(公告)号：US20080091381A1

公开(公告)日：2008-04-17

申请号：US11869237

申请日：2007-10-09

申请人： Kunie OGATA ,  Shinichi Shinozuka ,  Yoshihiro Kondo

发明人： Kunie OGATA ,  Shinichi Shinozuka ,  Yoshihiro Kondo

IPC分类号： G01B21/02

CPC分类号： G03F7/70625 ,  G03F7/70525 ,  H01L22/20

摘要： In the present invention, substrates in a plurality of lots are successively processed in a coating and developing treatment system, and line width measurement is performed for some of substrates of the substrate which have been through processing in each lot. The line width measurement of two successive lots is performed such that the last line width measurement in the previous lot of the two successive lots has been completed at the time of completion of processing of a substrate which is first subjected to the line width measurement in the subsequent lot. According to the present invention, the measurement of product substrates can be performed without decreasing the throughput of the product substrates.

摘要翻译： 在本发明中，多个批次中的基板在涂布显影处理系统中连续地进行处理，并且对于已经通过每个批次处理的基板的一些基板进行线宽测量。 执行两个连续批次的线宽测量，使得在完成对在第一次进行线宽测量的基板的处理完成时，两个连续批次的前一批次中的最后一行宽度测量已经完成 随后很多。 根据本发明，可以在不降低产品基板的生产量的情况下进行产品基板的测量。