公开(公告)号：US20140120659A1

公开(公告)日：2014-05-01

申请号：US14146937

申请日：2014-01-03

Applicant: LG Display Co., Ltd.

Inventor： Chang-Il RYOO ,  Hyun-Sik SEO ,  Jong-Uk BAE

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole.

Abstract translation: 讨论了制造阵列基板的方法和包括阵列基板的显示装置。 根据实施例，阵列基板包括形成在基板上的栅电极; 形成在所述栅电极上的栅极绝缘层; 形成在栅绝缘层上的氧化物半导体层和防蚀层，其中氧化物半导体层的端部和防蚀层的端部彼此对准; 源极和漏极形成在防蚀层上; 钝化层，包括形成在源电极和漏电极上以及栅极绝缘层上的接触孔; 以及形成在钝化层上并通过接触孔的像素电极。

公开(公告)号：US20130153870A1

公开(公告)日：2013-06-20

申请号：US13706216

申请日：2012-12-05

Applicant: LG Display Co., Ltd.

Inventor： Hyun-Sik SEO ,  Jeong-Hoon LEE ,  Dae-Won KIM ,  Yong-Ho CHOI

IPC: H01L51/52

CPC classification number: H01L51/5262 ,  H01L27/1248 ,  H01L27/322 ,  H01L27/3272 ,  H01L51/5275

Abstract: The present invention is to provide an organic light emitting display device for preventing a thin-film transistor from being deteriorated due to hydrogen when forming a light compensation layer configured to enhance viewing angle, and the organic light emitting display device may include a first substrate and a second substrate comprising a plurality of pixels; a thin-film transistor formed at each pixel of the first substrate; a color filter layer formed at each pixel; an insulating layer formed on the color filter layer; a light compensation layer formed on the insulating layer and made of a material containing no hydrogen; a pixel electrode formed on the light compensation layer of each pixel; an organic light emitting unit formed on the pixel electrode to emit light; and a common electrode formed on the organic light emitting unit.

Abstract translation: 本发明提供一种有机发光显示装置，用于防止在形成用于增强视角的光补偿层时由于氢而使薄膜晶体管劣化，并且有机发光显示装置可包括第一基板和 包括多个像素的第二基板; 形成在所述第一基板的每个像素处的薄膜晶体管; 形成在每个像素处的滤色器层; 形成在滤色器层上的绝缘层; 形成在绝缘层上并由不含氢的材料制成的光补偿层; 形成在每个像素的光补偿层上的像素电极; 形成在像素电极上以发光的有机发光单元; 以及形成在有机发光单元上的公共电极。

公开(公告)号：US20140353661A1

公开(公告)日：2014-12-04

申请号：US14109339

申请日：2013-12-17

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyun-Sik SEO ,  Jong-Woo KIM ,  Chung-Ho LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L27/3279 ,  G02F2001/13629 ,  H01L27/124 ,  H01L27/1244 ,  H01L29/45 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: A thin film transistor (TFT) array substrate is disclosed. The TFT array substrate includes a gate line, a first gate electrode branched from the gate line, a gate insulating film formed over the substrate, an active layer formed on the gate insulating film, a data line formed to comprise a plurality of metal layers including a first metal layer and a second metal layer formed of copper (Cu), a source electrode formed on the gate insulating film to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers, and a drain electrode formed on the gate insulating film to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers.

Abstract translation: 公开了薄膜晶体管（TFT）阵列基板。 TFT阵列基板包括栅极线，从栅极线分支的第一栅极电极，在基板上形成的栅极绝缘膜，形成在栅极绝缘膜上的有源层，形成为包括多个金属层的数据线，包括 由铜（Cu）形成的第一金属层和第二金属层，形成在所述栅极绝缘膜上以在所述多个金属层中包括除了所述第二金属层之外的剩余金属层的源电极和形成在 所述栅极绝缘膜在所述多个金属层中包括除了所述第二金属层之外的剩余金属层。

公开(公告)号：US20150144943A1

公开(公告)日：2015-05-28

申请号：US14538243

申请日：2014-11-11

Applicant: LG Display Co., Ltd.

Inventor： Hyun-Sik SEO ,  Kyung-Han SEO

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/7869 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2227/323

Abstract: An array substrate includes: a substrate; a thin film transistor including a gate electrode, an oxide semiconductor layer and source and drain electrodes, wherein a first insulating layer of an inorganic insulating material is disposed between the gate electrode and the oxide semiconductor layer, and wherein a second insulating layer of an inorganic insulating material is disposed between the oxide semiconductor layer and the source and drain electrodes; a passivation layer on the thin film transistor; a first electrode on the passivation layer in the pixel region; and a first hydrogen absorbing layer on at least one of top and bottom surfaces of the first insulating layer, top and bottom surfaces of the second insulating layer and top and bottom surfaces of the passivation layer, the first hydrogen absorbing layer including plurality of particles spaced apart from each other and including one of nickel, palladium and platinum.

Abstract translation: 阵列基板包括：基板; 包括栅电极，氧化物半导体层以及源极和漏极的薄膜晶体管，其中无机绝缘材料的第一绝缘层设置在栅电极和氧化物半导体层之间，并且其中无机的第二绝缘层 绝缘材料设置在氧化物半导体层与源极和漏极之间; 薄膜晶体管上的钝化层; 在像素区域中的钝化层上的第一电极; 以及在所述第一绝缘层，所述第二绝缘层的顶表面和底表面以及所述钝化层的顶表面和底表面中的至少一个顶表面和底表面上的第一吸氢层，所述第一吸氢层包括间隔开的多个颗粒 彼此分开，包括镍，钯和铂中的一种。

公开(公告)号：US20130277673A1

公开(公告)日：2013-10-24

申请号：US13923019

申请日：2013-06-20

Applicant: LG Display Co., Ltd.

Inventor： Chang-Il RYOO ,  Hyun-Sik SEO ,  Jong-Uk BAE

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole.

Abstract translation: 讨论了制造阵列基板的方法和包括阵列基板的显示装置。 根据实施例，阵列基板包括形成在基板上的栅电极; 形成在所述栅电极上的栅极绝缘层; 形成在栅绝缘层上的氧化物半导体层和防蚀层，其中氧化物半导体层的端部和防蚀层的端部彼此对准; 源极和漏极形成在防蚀层上; 钝化层，包括形成在源电极和漏电极上以及栅极绝缘层上的接触孔; 以及形成在钝化层上并通过接触孔的像素电极。