公开(公告)号：US20160043113A1

公开(公告)日：2016-02-11

申请号：US14921099

申请日：2015-10-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil CHO ,  Yongil KIM

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

公开(公告)号：US20150243723A1

公开(公告)日：2015-08-27

申请号：US14628411

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil CHO ,  Yongil KIM

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 TFT基板包括：基板，在基板上的第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，基板上的第二TFT，包括：第二TFT 栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在 所述中间绝缘层在所述氧化物层上并且与所述第二栅电极重叠，其中所述第一源极，第一漏极和所述第二栅电极位于所述中间绝缘层和所述氧化物层之间，并且其中所述第二源极和所述第二漏极 在氧化物半导体层上。

公开(公告)号：US20150243685A1

公开(公告)日：2015-08-27

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板的第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极 以及第一漏电极，设置在所述基板的第二区域的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和 第二漏电极，设置在基板的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅极电极和第二栅电极之上的氧化物层， 氧化物半导体层。

公开(公告)号：US20150243724A1

公开(公告)日：2015-08-27

申请号：US14629544

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Seongpil CHO ,  Yongil KIM

IPC: H01L27/32 ,  H01L29/04 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3276 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A display includes: a first TFT, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT, including: a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 一种显示器包括：第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，第二TFT，包括：第二栅电极，第二栅电极，第二栅电极， 栅极电极，第二源电极和第二漏极电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在中间绝缘层上，在氧化物层上， 并且与第二栅电极重叠，其中第一源极，第一漏极和第二栅电极在中间绝缘层和氧化物层之间，并且其中第二源极和第二漏极电极在氧化物半导体层上。

公开(公告)号：US20150243688A1

公开(公告)日：2015-08-27

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

Abstract translation: 提供薄膜晶体管基板和使用其的显示器。 显示器包括：第一区域，第二区域，设置在第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极， 以及第一漏极，设置在所述第二区的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅极，所述第二栅电极上的氧化物半导体层，第二源极和第二漏极， 显示装置的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅电极和第二栅电极之上的氧化物层。