公开(公告)号：US09478591B2

公开(公告)日：2016-10-25

申请号：US14575435

申请日：2014-12-18

Applicant: LG DISPLAY CO., LTD.

Inventor： Kyoungjin Nam ,  Soyoung Noh ,  Gisang Hong ,  Seonhui Hwang ,  Jeongoh Kim

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52

CPC classification number: H01L27/3246 ,  H01L27/3258 ,  H01L51/5212 ,  H01L51/5228

Abstract: An organic light emitting display device can include a substrate, two or more first electrodes positioned on the substrate and spaced apart from one another, an auxiliary electrode positioned between the first electrodes, a barrier rib positioned on the auxiliary electrode and having a reversely tapered structure including at least two layers, a bank layer exposing portions of the first electrodes to define a light emission region, an organic layer positioned in the light emission region and patterned by the barrier rib, and a second electrode positioned on the organic layer and the barrier rib and disposed to be in contact with the auxiliary electrode.

Abstract translation: 有机发光显示装置可以包括基板，位于基板上并且彼此间隔开的两个或更多个第一电极，位于第一电极之间的辅助电极，位于辅助电极上并具有倒锥形结构的阻挡肋 包括至少两个层，暴露第一电极的部分以限定发光区域的堤层，位于发光区域中的有机层并且由阻挡层图案化;以及位于有机层和屏障上的第二电极 并配置成与辅助电极接触。

公开(公告)号：US09857648B2

公开(公告)日：2018-01-02

申请号：US14501392

申请日：2014-09-30

Applicant: LG Display Co., Ltd.

Inventor： Minjoo Kim ,  Soyoung Noh ,  Yongil Kim ,  Taehwan Kim

IPC: G02F1/1343 ,  G02F1/1362

CPC classification number: G02F1/136227 ,  G02F1/134363 ,  G02F2001/134372

Abstract: A disclosed liquid crystal display includes a substrate with a gate electrode, a gate insulation film, an active layer, a source electrode, a drain electrode, and a first passivation film formed on the substrate. An organic insulation film having a first contact hole and a common electrode having a second contact hole are formed on the first passivation film using a single mask. The display also includes a second passivation film on the common electrode, and a pixel electrode on the second passivation film and connected to the drain electrode via the contact hole through the second passivation film. The top surface of the organic insulation film adjacent to a side edge of the organic insulation film is uncovered by the common electrode.

公开(公告)号：US20170062490A1

公开(公告)日：2017-03-02

申请号：US15248667

申请日：2016-08-26

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/1251

Abstract: A display is disclosed which includes a substrate, a first thin film transistor, a second thin film transistor, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first thin film transistor is disposed in a first area on the substrate. The second thin film transistor is disposed in a second area on the substrate. The first storage capacitor electrode is disposed in a third area on the substrate. The oxide layer covers the first thin film transistor and the second thin film transistor, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode includes a first metal layer and a second metal layer, and overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first thin film transistor, the second thin film transistor and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

Abstract translation: 公开了一种显示器，其包括基板，第一薄膜晶体管，第二薄膜晶体管，第一存储电容器电极，氧化物层，氮化物层，第二存储电容器电极，平面层和像素电极。 第一薄膜晶体管设置在基板上的第一区域中。 第二薄膜晶体管设置在基板上的第二区域中。 第一存储电容器电极设置在基板上的第三区域中。 氧化物层覆盖第一薄膜晶体管和第二薄膜晶体管，并露出第一存储电容器电极。 氮化物层设置在氧化物层上并覆盖第一存储电容器电极。 第二存储电容电极包括第一金属层和第二金属层，并且与氮化物层上的第一辅助电容电极重叠。 平面层覆盖第一薄膜晶体管，第二薄膜晶体管和第二存储电容器电极。 像素电极设置在平面层上。

公开(公告)号：US10186529B2

公开(公告)日：2019-01-22

申请号：US15248667

申请日：2016-08-26

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh

IPC: H01L27/12

Abstract: A display is disclosed which includes a substrate, a first thin film transistor, a second thin film transistor, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first thin film transistor is disposed in a first area on the substrate. The second thin film transistor is disposed in a second area on the substrate. The first storage capacitor electrode is disposed in a third area on the substrate. The oxide layer covers the first thin film transistor and the second thin film transistor, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode includes a first metal layer and a second metal layer, and overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first thin film transistor, the second thin film transistor and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开(公告)号：US10121899B2

公开(公告)日：2018-11-06

申请号：US15352951

申请日：2016-11-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Kyeongju Moon ,  Soyoung Noh ,  Hyunsoo Shin ,  Wonkyung Kim

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/32 ,  G02F1/1368

Abstract: A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.

公开(公告)号：US09954014B2

公开(公告)日：2018-04-24

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh ,  Jinchae Jeon ,  Seungchan Choi ,  Junho Lee ,  Youngjang Lee ,  Sungbin Ryu ,  Kitae Kim ,  Bokyoung Cho ,  Jeanhan Yoon ,  Uijin Chung ,  Jihye Lee ,  Eunsung Kim ,  Hyunsoo Shin ,  Kyeongju Moon ,  Hyojin Kim ,  Wonkyung Kim ,  Jeihyun Lee ,  Soyeon Je

IPC: H01L27/12 ,  H01L27/32 ,  H01L49/02 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开(公告)号：US09806105B2

公开(公告)日：2017-10-31

申请号：US15295128

申请日：2016-10-17

Applicant: LG Display Co., Ltd.

Inventor： Wonkyung Kim ,  Soyoung Noh ,  Hyunsoo Shin ,  Kyeongju Moon

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/56 ,  H01L27/12 ,  H01L29/66 ,  G02F1/136 ,  G02F1/1345

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.

公开(公告)号：US09443920B2

公开(公告)日：2016-09-13

申请号：US14469055

申请日：2014-08-26

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh ,  Jeongoh Kim

IPC: H01L51/56 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3272 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3265

Abstract: The present disclosure relates to an organic light emitting diode display having high aperture ratio and a method for manufacturing the same. The present disclosure suggests an organic light emitting diode display comprising: a plurality of pixel areas disposed in a matrix manner on a substrate; a thin film transistor disposed in the pixel area; an organic light emitting diode connected to the thin film transistor and disposed in the pixel area; and a three-stack storage capacitor having four electrodes connected to the thin film transistor and the organic light emitting diode.

Abstract translation: 本公开涉及具有高开口率的有机发光二极管显示器及其制造方法。 本公开提出了一种有机发光二极管显示器，包括：以矩阵方式设置在基板上的多个像素区域; 设置在像素区域中的薄膜晶体管; 连接到薄膜晶体管并设置在像素区域中的有机发光二极管; 以及具有连接到薄膜晶体管和有机发光二极管的四个电极的三叠层存储电容器。