公开(公告)号：US10325937B2

公开(公告)日：2019-06-18

申请号：US14628378

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/822

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US09691799B2

公开(公告)日：2017-06-27

申请号：US14629632

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  G02F1/1345 ,  G02F1/1368

CPC classification number: H01L27/1251 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US11486757B2

公开(公告)日：2022-11-01

申请号：US16591377

申请日：2019-10-02

Applicant: LG Display Co., Ltd.

Inventor： SeonYeong Kim ,  Sungjin Lee

IPC: G01H11/08 ,  B06B1/02 ,  G01N29/34

Abstract: The present disclosure relates to ultrasonic sensors, ultrasonic sensing devices and display devices. The ultrasonic sensor includes an array of thin film transistors in which first electrodes are disposed, a piezoelectric material, and second electrodes. In order to generate ultrasonic waves and perform sensing, the second electrode is disposed in a patterned structure in which the second electrode is divided into multiple second electrodes, and a high voltage in the form of pulse is applied to the second electrode. Thus, in accordance with embodiments of the present disclosure, a high voltage is not applied to the array of thin film transistors; therefore, it is possible to reduce or overcome degradation of circuit elements disposed in the array of thin film transistors. Accordingly, it is possible to improve the reliability and lifetime of the circuit elements disposed in the array of thin film transistors, while performing sensing.

公开(公告)号：US10985196B2

公开(公告)日：2021-04-20

申请号：US14628444

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Hoyoung Jung ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

公开(公告)号：US10186528B2

公开(公告)日：2019-01-22

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

公开(公告)号：US11653570B2

公开(公告)日：2023-05-16

申请号：US16902127

申请日：2020-06-15

Applicant: LG Display Co., Ltd.

Inventor： DeukHo Yeon ,  TaeHyoung Moon ,  JaeHyun Kim ,  Sungjin Lee

IPC: H01L41/113 ,  G01H11/08 ,  H01L41/08 ,  H01L41/047

CPC classification number: H01L41/1132 ,  G01H11/08 ,  H01L41/0474 ,  H01L41/081

Abstract: A piezoelectric sensor includes: a lower substrate; a plurality of sensing transistors that are disposed on the lower substrate; a lower electrode that is disposed to cover the plurality of sensing transistors; a piezoelectric material layer that is disposed on the lower electrode; and an upper electrode that is disposed on the piezoelectric material layer. The piezoelectric material layer has a first thickness in a plurality of first areas in which the plurality of sensing transistors are disposed and has a second thickness which is greater than the first thickness in a second area in which the plurality of sensing transistors are not disposed. Accordingly, it is possible to further accurately and finely detect various types of biometric information.

公开(公告)号：US10903246B2

公开(公告)日：2021-01-26

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

公开(公告)号：US09721973B2

公开(公告)日：2017-08-01

申请号：US14629554

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Hoyoung Jung ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.