公开(公告)号：US11063068B2

公开(公告)日：2021-07-13

申请号：US16575917

申请日：2019-09-19

Applicant: LG Display Co., Ltd.

Inventor： JinChae Jeon ,  SoYoung Noh ,  UiJin Chung ,  Eunsung Kim ,  HyunSoo Shin ,  Wonkyung Kim ,  Jeihyun Lee

IPC: H01L27/12

Abstract: A display apparatus includes a substrate having a first substrate, a second substrate, and an inorganic insulating layer between the first substrate and the second substrate. A first buffer layer is on the substrate, wherein the first buffer layer includes n+1 layers, and ‘n’ is 0 or an even number. A first thin film transistor, a second thin film transistor, and a storage capacitor are each on the first buffer layer. The first thin film transistor includes a first active layer formed of a low temperature poly silicon material. The second thin film transistor includes a second active layer formed of an oxide semiconductor material. The storage capacitor includes a first capacitor electrode and a second capacitor electrode.

公开(公告)号：US09806105B2

公开(公告)日：2017-10-31

申请号：US15295128

申请日：2016-10-17

Applicant: LG Display Co., Ltd.

Inventor： Wonkyung Kim ,  Soyoung Noh ,  Hyunsoo Shin ,  Kyeongju Moon

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/56 ,  H01L27/12 ,  H01L29/66 ,  G02F1/136 ,  G02F1/1345

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.

公开(公告)号：US10121899B2

公开(公告)日：2018-11-06

申请号：US15352951

申请日：2016-11-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Kyeongju Moon ,  Soyoung Noh ,  Hyunsoo Shin ,  Wonkyung Kim

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/32 ,  G02F1/1368

Abstract: A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.

公开(公告)号：US09954014B2

公开(公告)日：2018-04-24

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh ,  Jinchae Jeon ,  Seungchan Choi ,  Junho Lee ,  Youngjang Lee ,  Sungbin Ryu ,  Kitae Kim ,  Bokyoung Cho ,  Jeanhan Yoon ,  Uijin Chung ,  Jihye Lee ,  Eunsung Kim ,  Hyunsoo Shin ,  Kyeongju Moon ,  Hyojin Kim ,  Wonkyung Kim ,  Jeihyun Lee ,  Soyeon Je

IPC: H01L27/12 ,  H01L27/32 ,  H01L49/02 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.