公开(公告)号：US20210305193A1

公开(公告)日：2021-09-30

申请号：US17207086

申请日：2021-03-19

Applicant: LG Electronics Inc.

Inventor： Siho CHOI ,  Seongmoo CHO ,  Kwangsoo KIM ,  Gun LEE

IPC: H01L23/00 ,  H01L23/373 ,  H01L25/065

Abstract: A power module according implementations of the present disclosure includes a bonding layer for bonding two adjacent members. The bonding layer is formed by melting, applying, and solidifying a bonding material that has excellent thermal conductivity and electrical conductivity. The melted bonding material includes a plurality of anti-tilting members. The two members bonded during the process of solidifying the melted bonding material are supported by the plurality of anti-tilting members. This may allow tilting caused during the formation of the bonding layer to be suppressed.

公开(公告)号：US20210329815A1

公开(公告)日：2021-10-21

申请号：US17033353

申请日：2020-09-25

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsoo KIM ,  Seongmoo CHO ,  Oksun YU ,  Hyunsi HWANG ,  Siho CHOI ,  Gun LEE

IPC: H05K7/20 ,  H02M1/32 ,  H02M7/537

Abstract: The present disclosure relates to an electric power module and an inverter apparatus having the same. The electric power module of the present disclosure may include a power device that converts the frequency of input power for output; a housing in which a passage of cooling fluid is disposed to accommodate the power device therein, and a cooling member, one side of which is in direct heat exchange with the power device, and the other side of which is in direct heat exchange with the cooling fluid, wherein the cooling member is made of a metal foam having a multi-porous structure. As a result, it may be possible to increase a heat transfer area of the heat conductor, and suppress the occurrence of pressure loss in the cooling fluid.

公开(公告)号：US20210243923A1

公开(公告)日：2021-08-05

申请号：US17035263

申请日：2020-09-28

Applicant: LG ELECTRONICS INC.

Inventor： Hyunsi HWANG ,  Seongmoo CHO ,  Kwangsoo KIM ,  Siho CHOI ,  Gun LEE

IPC: H05K7/20

Abstract: A power module assembly is disclosed. A power module assembly according to an embodiment includes a module housing part having a power module, and an upper cover part and a lower cover part disposed to cover upper and lower sides of the module housing part, respectively, and defining a flow path part, through which cooling water flows, in spaces apart from the module housing part. The module housing part exposes a part of the power module on the flow path part. With the configuration, the cooling water can flow in direct contact with the power module, thereby more improving heat dissipation performance of the power module assembly.

公开(公告)号：US20210337703A1

公开(公告)日：2021-10-28

申请号：US17039449

申请日：2020-09-30

Applicant: LG ELECTRONICS INC.

Inventor： Gun LEE ,  Seongmoo CHO ,  Kwangsoo KIM ,  Siho CHOI

IPC: H05K7/20 ,  H05K5/02 ,  H05K5/03

Abstract: The present disclosure relates to a power module assembly, and may include a plurality of cooling fins on an upper cover covering an upper portion of a module housing and a lower cover covering a lower portion of the module housing to cool the power module received inside the module housing, and the plurality of cooling fins may constitute a cooling passage to allow coolant to flows into the module housing, and expand a heat exchange area of the power module, thereby improving the cooling performance of the power module.

公开(公告)号：US20200036283A1

公开(公告)日：2020-01-30

申请号：US16399522

申请日：2019-04-30

Applicant: LG ELECTRONICS INC.

Inventor： Seongmoo CHO ,  Kwangsoo KIM

IPC: H02M1/42 ,  G05F1/70 ,  H02M5/458 ,  H02P23/26

Abstract: A device for power factor correction can include a converter housing having an inner surface; a first converter substrate mounted on the inner surface of the converter housing; a second converter substrate mounted on another surface of first converter housing opposite to the inner surface; and a housing cover covering the first converter substrate and coupled to an upper surface of the converter housing, in which the second converter substrate includes a first surface having a first region including a source pad, and a second region including a drain pad spaced apart from the source pad, the source pad including a source pad extension portion extending into the second region; and a second surface including a heat dissipation pad for communicating heat from the source and drain pads to an outside of the device, in which the first region of the second converter substrate overlaps with the another surface of first converter housing, and the second region of the second converter substrate faces the housing cover without overlapping with the first converter substrate.

公开(公告)号：US20150200257A1

公开(公告)日：2015-07-16

申请号：US14589730

申请日：2015-01-05

Applicant: LG Electronics Inc.

Inventor： Junho KIM ,  Seongmoo CHO ,  Taehoon JANG ,  Eujin HWANG ,  Jaemoo KIM

IPC: H01L29/205 ,  H01L29/20 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786

Abstract: A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Abstract translation: 氮化物半导体功率器件包括沿着沉积方向具有可变的Al组成的AlGaN多层和SixNy层，以便最小化在制造异质结型时产生的漏电流的增加和击穿电压的降低 HFET器件。 半导体器件包括缓冲层，形成在缓冲层上的AlGaN多层，形成在AlGaN多层上的GaN沟道层和形成在AlGaN多层上的AlGaN阻挡层，其中AlGaN多层的铝（Al）组成沿着 沉积AlGaN多层的方向。