公开(公告)号：US20250029968A1

公开(公告)日：2025-01-23

申请号：US18709398

申请日：2022-09-06

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Wonseok CHOI ,  Sul LEE ,  Minseok KIM

IPC: H01L25/16 ,  H01L27/12 ,  H01L33/62

Abstract: A display device according to an embodiment includes: a substrate; a plurality of assembly lines disposed on the substrate and including first assembly lines and second assembly lines which are alternately arranged; a planarization layer having a plurality of openings which overlap the plurality of assembly lines respectively; a plurality of light-emitting elements disposed in the plurality of openings respectively; and a plurality of conductive connection members disposed in the plurality of openings respectively to electrically connect the plurality of assembly lines and the plurality of light-emitting elements to each other, wherein the planarization layer protrudes more inwardly of the plurality of openings than one end of the respective assembly lines, and one end of the respective assembly lines is exposed from the planarization layer and comes into contact with the plurality of conductive connection members.

公开(公告)号：US20240250065A1

公开(公告)日：2024-07-25

申请号：US18290995

申请日：2021-07-21

Applicant: LG ELECTRONICS INC.

Inventor： Chilkeun PARK ,  Byoungkwon CHO ,  Wonseok CHOI ,  Wonjae CHANG

IPC: H01L25/065 ,  H01L27/12 ,  H01L33/62

CPC classification number: H01L25/0652 ,  H01L27/124 ,  H01L33/62

Abstract: The display device can include a substrate, a barrier rib having an assembly hole on the substrate, a semiconductor light emitting device in the assembly hole, and a first connection part disposed in the assembly hole and on the barrier rib and electrically connected to a side surface of the semiconductor light emitting device. In the embodiment, maximum luminance can always be obtained regardless of whether the assembling wirings disposed on the substrate are disposed on the same layer or different layers, and each pixel has constant luminance, thereby improving image quality due to luminance uniformity.

公开(公告)号：US20230420423A1

公开(公告)日：2023-12-28

申请号：US18247789

申请日：2020-10-06

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Junoh SHIN ,  Youngdo KIM ,  Wonseok CHOI ,  Dohan KIM

IPC: H01L25/075 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L2933/0066 ,  H01L33/62

Abstract: A display device according to embodiments of the present invention comprises: a substrate; a plurality of first metal wiring layers formed on the substrate; a first insulating layer stacked on the substrate to cover the first metal wiring; a second metal wiring layer stacked on at least a portion of the first insulating layer so as to be spaced apart therefrom; and a second insulating layer stacked on the second metal wiring. The second metal wiring layer comprises: at least one first metal layer having a first conductivity; and at least one second metal layer having a higher conductivity than the first metal layer, wherein the first metal layer may block diffusion of the second metal layer.

公开(公告)号：US20190355860A1

公开(公告)日：2019-11-21

申请号：US16530701

申请日：2019-08-02

Applicant: LG ELECTRONICS INC.

Inventor： Hyungseok KIM ,  Kwangsun JI ,  Youngjoo EO ,  Heonmin LEE ,  Choul KIM ,  Hojung SYN ,  Wonseok CHOI ,  Kihoon PARK ,  Junghoon CHOI ,  Hyunjin YANG

IPC: H01L31/0747 ,  H01L31/0216

Abstract: A solar cell can include a single crystalline semiconductor substrate; an emitter region positioned on an incident surface of the substrate, forming a p-n junction with the single crystalline semiconductor substrate; a first passivation layer positioned on a rear surface of the substrate and made of an oxide material; a back surface field layer positioned on the first passivation layer and forming a hetero junction with the single crystalline semiconductor substrate; a first electrode electrically connected to the emitter region; and a second electrode electrically connected to the single crystalline semiconductor substrate

公开(公告)号：US20180301580A1

公开(公告)日：2018-10-18

申请号：US15949628

申请日：2018-04-10

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Hyun LEE ,  Wonseok CHOI ,  Younho HEO

IPC: H01L31/0725 ,  H01L31/0735

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising a first cell, the first cell including: a first base layer formed of a gallium indium phosphide (GaInP)-based compound semiconductor; a first emitter layer forming a p-n junction with the first base layer; a first window layer positioned on a front surface of the first base layer or the first emitter layer; and a first back surface field layer positioned on a back surface of the first emitter layer or the first base layer, wherein the first window layer of the first cell is formed of a four-component III-V compound semiconductor.

公开(公告)号：US20250006879A1

公开(公告)日：2025-01-02

申请号：US18688172

申请日：2022-09-01

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Wonseok CHOI ,  Gisang HONG ,  Eunhye LEE ,  Jungmin KIM ,  Hun JANG ,  Hyeseon EOM ,  Moonsun LEE ,  Juhyun NAM

IPC: H01L33/62 ,  H01L25/16

Abstract: The manufacturing method of the display device according to the embodiment includes a step of self-aligning the light emitting device inside the opening of the planarization layer overlapping the first assembly wiring and the second assembly wiring, a step of sequentially forming a conductive layer and an organic layer on a planarization layer and a light emitting device, a step of ashing the organic layer to remove the second part on the first part of the organic layer, and a step of forming a contact electrode by etching the conductive layer corresponding to the second part, wherein the contact electrode is in contact with the side of the first semiconductor layer below the light emitting device.

公开(公告)号：US20240363818A1

公开(公告)日：2024-10-31

申请号：US18572064

申请日：2021-06-30

Applicant: LG ELECTRONICS INC.

Inventor： Jeonghyo KWON ,  Wonseok CHOI ,  Junoh SHIN ,  Sungmin PARK

IPC: H01L33/62 ,  H01L25/16

CPC classification number: H01L33/62 ,  H01L25/167

Abstract: The display device can comprise a first wiring, a second wiring disposed on a different layer from the first wiring, a pad disposed on the same layer as the second wiring and that vertically overlaps the first wiring, and on the pad and the second wiring. It is disposed and can comprise an insulating layer having an assembly hole, and a semiconductor light emitting device disposed on a pad and a second wiring within the assembly hole. The embodiment prevents separation of the semiconductor light emitting device, improves the light efficiency of the semiconductor light emitting device to implement high luminance, and significantly improves light efficiency, thereby implementing further improved high resolution.

公开(公告)号：US20240194844A1

公开(公告)日：2024-06-13

申请号：US18286491

申请日：2022-04-12

Applicant: LG DISPLAY CO., LTD. ,  LG ELECTRONICS INC.

Inventor： Gisang HONG ,  Jaeyoung OH ,  Jungmin KIM ,  Wonseok CHOI

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12 ,  H01L33/10

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/1244 ,  H01L33/10

Abstract: A display device including a semiconductor light emitting device according to an embodiment has a substrate, a first assembly wiring and a second assembly wiring spaced apart from each other on the substrate, a planarization layer having an opening hole and a contact hole on the first assembly wiring and the second assembly wiring, a light emitting device disposed within the opening of the planarization layer, a first electrode thereof overlapping the first assembly wiring and the second assembly wiring, and a first light absorption layer disposed to surround an area where the light emitting device is disposed and having light absorption characteristics.

公开(公告)号：US20210265541A1

公开(公告)日：2021-08-26

申请号：US17153592

申请日：2021-01-20

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Wonseok CHOI ,  Sungmin PARK

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/38 ,  H01L33/00

Abstract: Discussed are a display device and a method of manufacturing the same, and more particularly, to a display device including a semiconductor light emitting device having a size of several μm to several tens of μm and a method of manufacturing the same. The present disclosure provides a display device, including a base portion, a plurality of transistors disposed on the base portion, a plurality of semiconductor light emitting devices disposed on the base portion, a plurality of wiring electrodes disposed on the base portion, and electrically connected to the plurality of transistors and the plurality of semiconductor light emitting devices, a partition wall disposed on the base portion, and formed to cover the plurality of transistors, and a connection electrode connecting some of the plurality of transistors and some of the plurality of wiring electrodes, wherein the connection electrode is configured to pass through the partition wall.

公开(公告)号：US20180182912A1

公开(公告)日：2018-06-28

申请号：US15853237

申请日：2017-12-22

Applicant: LG Electronics Inc.

Inventor： Wonseok CHOI ,  Jinhee PARK ,  Soohyun KIM ,  Wonki YOON ,  Heonmin LEE

IPC: H01L31/0735 ,  H01L31/0304 ,  H01L31/0216 ,  H01L31/0725

CPC classification number: H01L31/0735 ,  H01L31/02168 ,  H01L31/03046 ,  H01L31/0725 ,  Y02E10/544

Abstract: A compound semiconductor solar cell that includes: a light absorbing layer; a first electrode; and a second electrode, wherein the light absorbing layer includes; a first semiconductor layer having a first band gap, a second semiconductor layer having a second band gap being larger than the first band gap and forming a hetero junction with the first semiconductor layer, and including a first material and a second material, and wherein in the junction buffer layer, a concentration of the first material on a surface in contact with the second semiconductor layer is larger than the concentration of the first material on a surface in contact with the first semiconductor layer, and a concentration of the second material on the surface in contact with the second semiconductor layer is smaller than the concentration of the second material on the surface in contact with the first semiconductor layer is disclosed.