公开(公告)号：US20190326456A1

公开(公告)日：2019-10-24

申请号：US16457129

申请日：2019-06-28

申请人： LG ELECTRONICS INC.

发明人： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

摘要： A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

公开(公告)号：US20190305171A1

公开(公告)日：2019-10-03

申请号：US16443564

申请日：2019-06-17

申请人： LG ELECTRONICS INC.

发明人： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC分类号： H01L31/18 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/20 ,  H01L31/105 ,  H01L31/024 ,  H01L31/0236

摘要： A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US20220319892A1

公开(公告)日：2022-10-06

申请号：US17628776

申请日：2020-02-11

申请人： LG ELECTRONICS INC.

发明人： Hyunwoo CHO ,  Bongchu SHIM ,  Hyeyoung YANG ,  Jisoo KO ,  Wonjae CHANG

IPC分类号： H01L21/68 ,  H01L21/683

摘要： The present invention provides an assembly substrate used in a method for manufacturing a display device which mounts semiconductor light emitting devices on a predetermined position of an assembly substrate by using an electric field and a magnetic field. Specifically, the assembly substrate is characterized by comprising: a base part; a plurality of assembly electrodes formed extending in one direction and disposed on the base part; a dielectric layer laminated on the base part so as to cover the assembly electrodes; a partition wall formed on the base part and including a plurality of grooves for guiding the semiconductor light emitting devices to a predetermined position; and a metal shielding layer formed on the base part, wherein each of the plurality of grooves penetrates the partition wall so as to form a seating surface on which the guided light emitting devices are seated, and the metal shielding layer overlaps with a part of the seating surface such that an electric field formed on a part of the seating surface is shielded.

公开(公告)号：US20220262967A1

公开(公告)日：2022-08-18

申请号：US17627541

申请日：2020-04-09

申请人： LG ELECTRONICS INC.

发明人： Sungjin KIM ,  Juhwa CHEONG ,  Hyungwook CHOI ,  Wonjae CHANG

IPC分类号： H01L31/0368 ,  H01L31/0224 ,  H01L31/18

摘要： A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.

公开(公告)号：US20190148573A1

公开(公告)日：2019-05-16

申请号：US16250463

申请日：2019-01-17

申请人： LG ELECTRONICS INC.

发明人： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0747

摘要： A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US20170309761A1

公开(公告)日：2017-10-26

申请号：US15643180

申请日：2017-07-06

申请人： LG ELECTRONICS INC.

发明人： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0747 ,  H01L31/077

CPC分类号： H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

摘要： A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.

公开(公告)号：US20240322084A1

公开(公告)日：2024-09-26

申请号：US18573895

申请日：2021-07-05

申请人： LG ELECTRONICS INC.

发明人： Jinsung KIM ,  Wonjae CHANG ,  Wonseok CHOI

IPC分类号： H01L33/44 ,  H01L25/16

CPC分类号： H01L33/44 ,  H01L25/167

摘要： A semiconductor light emitting device includes a light emitting structure having a first region and a second region along a major axis direction, an insulating layer surrounding a side surface of the first region, and a first electrode surrounding a side surface of the second region. The thickness of the insulating layer is the same as the thickness of the first electrode. Therefore, when implementing a display, lighting defects can be prevented and luminance deviation can be eliminated, thereby improving image quality.

公开(公告)号：US20230059135A1

公开(公告)日：2023-02-23

申请号：US17784271

申请日：2020-01-31

申请人： LG ELECTRONICS INC.

发明人： Wonjae CHANG ,  Bongchu SHIM ,  Gunho KIM

IPC分类号： H01L33/48 ,  H01L25/16

摘要： A method for manufacturing a display device related to a micro-light-emitting diode (micro-LED) according to an embodiment of the present disclosure comprises the steps of: moving an assembly device comprising a magnetic body, while the assembly device is in contact or not in contact with an assembly substrate (a chamber filled with fluid is positioned below the assembly device and the assembly substrate, wherein a plurality of specific semiconductor light-emitting diodes are included in the chamber); on the basis of a magnetic field generated by the assembly device, moving the plurality of specific semiconductor light-emitting diodes in the chamber in a direction in which the assembly substrate is positioned; arranging, in first-type assembly grooves in the assembly substrate, a first group of semiconductor light-emitting diodes from among the plurality of specific semiconductor light-emitting diodes; and arranging, in second-type assembly grooves in the assembly substrate, a second group of semiconductor light-emitting diodes from among the plurality of specific semiconductor light-emitting diodes.

公开(公告)号：US20220367421A1

公开(公告)日：2022-11-17

申请号：US17623853

申请日：2019-08-01

申请人： LG ELECTRONICS INC.

发明人： Jisoo KO ,  Hyeyoung YANG ,  Wonjae CHANG ,  Hyunwoo CHO

IPC分类号： H01L25/075 ,  H01L33/62

摘要： The present invention may be applied to display device-related technical fields and relates to a display device using a semiconductor light-emitting element, such as a micro light-emitting diode (LED), and a manufacturing method therefor. The present invention, according to one embodiment, may comprise: a substrate; a stepped film positioned on at least some pixel regions, among a plurality of individual pixel regions positioned on the substrate; an assembly electrode positioned on the substrate or the stepped film; an insulation layer positioned on the assembly electrode; a partition wall positioned on the insulation layer and defining an assembly groove having mounted therein a semiconductor light-emitting element forming the individual pixel; the semiconductor light-emitting element mounted in an assembly surface of the assembly groove; and a lighting electrode electrically connected to the semiconductor light-emitting element.

公开(公告)号：US20160155866A1

公开(公告)日：2016-06-02

申请号：US14953264

申请日：2015-11-27

申请人： LG ELECTRONICS INC.

发明人： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC分类号： H01L31/0224 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

摘要： Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

摘要翻译： 公开了一种太阳能电池及其制造方法。 太阳能电池包括半导体衬底，半导体衬底的第一表面上的隧道层，隧道层上的第一导电类型半导体区域，并且包括第一导电类型的杂质，第二表面上的第二导电类型半导体区域， 包括与第一导电类型相反的第二导电类型的杂质，第一导电类型半导体区域上的第一钝化膜，形成在第一钝化膜上并通过形成在第一导电类型半导体区域中的开口部分连接到第一导电类型半导体区域的第一电极 第一钝化膜，第二导电型半导体区域上的第二钝化膜，以及形成在第二钝化膜上并通过形成在第二钝化膜中的开口部分连接到第二导电型半导体区域的第二电极。