公开(公告)号：US20180301580A1

公开(公告)日：2018-10-18

申请号：US15949628

申请日：2018-04-10

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Hyun LEE ,  Wonseok CHOI ,  Younho HEO

IPC: H01L31/0725 ,  H01L31/0735

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising a first cell, the first cell including: a first base layer formed of a gallium indium phosphide (GaInP)-based compound semiconductor; a first emitter layer forming a p-n junction with the first base layer; a first window layer positioned on a front surface of the first base layer or the first emitter layer; and a first back surface field layer positioned on a back surface of the first emitter layer or the first base layer, wherein the first window layer of the first cell is formed of a four-component III-V compound semiconductor.

公开(公告)号：US20130252371A1

公开(公告)日：2013-09-26

申请号：US13671289

申请日：2012-11-07

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Hyun LEE ,  Jinwon CHUNG ,  Sehwon AHN

IPC: H01L31/20

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

Abstract: A method for manufacturing a thin film solar cell includes depositing a front electrode on a substrate in a chamber, etching the front electrode formed on the substrate to form an uneven portion on the surface of the front electrode, forming a photoelectric conversion unit on the front electrode, and forming a back electrode on the photoelectric conversion unit. The depositing of the front electrode includes depositing the front electrode while reducing a process pressure of the chamber from a first pressure to a second pressure lower than the first pressure. The etching of the front electrode form the uneven portion of the front electrode so that a top portion of the uneven portion includes a portion formed at the second pressure.

Abstract translation: 一种薄膜太阳能电池的制造方法，其特征在于，在前述电极的基板的表面上形成前面的电极，在前述电极的表面形成凹凸部， 电极，并在光电转换单元上形成背电极。 前电极的沉积包括沉积前电极，同时将室的处理压力从第一压力降低到低于第一压力的第二压力。 前电极的蚀刻形成前电极的不平坦部分，使得不平坦部分的顶部包括形成在第二压力下的部分。

公开(公告)号：US20140174517A1

公开(公告)日：2014-06-26

申请号：US14078702

申请日：2013-11-13

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Heonmin LEE ,  Hyun LEE ,  Jinwon CHUNG

IPC: H01L31/078 ,  H01L31/18

CPC classification number: H01L31/078 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a first photoelectric conversion unit based on crystalline semiconductor, a second photoelectric conversion unit on the first photoelectric conversion unit and including a plurality of conversion portions based on amorphous semiconductor, a bonding layer disposed between the first and second photoelectric conversion units to connect the first photoelectric conversion unit to the second photoelectric conversion unit, and electrodes electrically connected respectively to the first and second photoelectric conversion units.

Abstract translation: 太阳能电池包括：基于结晶半导体的第一光电转换单元，在第一光电转换单元上的第二光电转换单元，并且包括基于非晶半导体的多个转换部分，配置在第一和第二光电转换单元之间的接合层， 将第一光电转换单元连接到第二光电转换单元，以及分别与第一和第二光电转换单元电连接的电极。

公开(公告)号：US20180248059A1

公开(公告)日：2018-08-30

申请号：US15904019

申请日：2018-02-23

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Gunho KIM ,  Hyun LEE ,  Wonseok CHOI ,  Younho HEO

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0735

CPC classification number: H01L31/035281 ,  H01L31/022425 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/186 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surface of the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surrounding the defect portion.

公开(公告)号：US20180301577A1

公开(公告)日：2018-10-18

申请号：US15951379

申请日：2018-04-12

Applicant: LG Electronics Inc.

Inventor： Younho HEO ,  Soohyun KIM ,  Hyun LEE ,  Changhyun JEONG

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/0304 ,  H01L31/1868 ,  H01L31/1888 ,  H01L31/1892 ,  Y02E10/50

Abstract: According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.