SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号:US20140346438A1

    公开(公告)日:2014-11-27

    申请号:US14454581

    申请日:2014-08-07

    Inventor: Kyong Jun KIM

    CPC classification number: H01L33/06 B82Y99/00 H01L33/04 H01L33/12 H01L33/32

    Abstract: Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.

    Abstract translation: 公开了一种半导体发光器件,其包括包括n型掺杂剂的第一导电半导体层,有源层和包括p型掺杂剂的第二至第六导电半导体层。 第三至第六导电半导体层包括有源层上的AlGaN基半导体,第二导​​电半导体层在第六导电半导体层上包括GaN基半导体层。 有源层包括多个量子势垒层和多个量子阱层,并且包括2到10的周期。多个量子阱层包括InGaN半导体,并且多个量子势垒层中的至少一个包括GaN基 半导体。 第六导电半导体层具有约5nm至约100nm的厚度。

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