Abstract:
Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.
Abstract:
Provided are a light emitting apparatus and a light unit having the same. The light emitting apparatus includes a light emitting device includes a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.