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    Toroidal plasma Abatement Apparatus and Method
    1.
    发明申请
    Toroidal plasma Abatement Apparatus and Method 有权
    环形等离子体消除装置及方法

    公开(公告)号：US20140262746A1

    公开(公告)日：2014-09-18

    申请号：US14212398

    申请日：2014-03-14

    Applicant: MKS Instruments, Inc.

    Inventor： Xing Chen ,  IIya Pokidov ,  Arthur Tian ,  Ken Tran ,  David Lam ,  Kevin W. Wenzel

    IPC: B01D53/76

    CPC classification number: H01J37/32449 ,  B01D53/323 ,  B01D53/76 ,  B01D2257/2064 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32844 ,  H01J37/32935 ,  H01J2237/3321 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2245/121 ,  Y02C20/30

    Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

    Abstract translation: 提供了一种用于减少气体的装置。 该装置包括具有多个入口和出口以及至少一个室壁的环形等离子体室。 一个或多个磁芯相对于环形等离子体室设置。 等离子体室限制环形等离子体。 第二气体入口位于第一气体入口和气体出口之间的距离气体出口距离d处的环形等离子体室上，使得第一气体入口和第二气体入口之间的环形等离子体通道体积基本上 由惰性气体填充，基于要减少的气体的期望停留时间的距离d。

    Method and apparatus for processing dielectric materials using microwave energy
    2.
    发明授权
    Method and apparatus for processing dielectric materials using microwave energy 有权

    公开(公告)号：US10940635B2

    公开(公告)日：2021-03-09

    申请号：US16101370

    申请日：2018-08-10

    Applicant: MKS Instruments, Inc.

    Inventor： Xing Chen ,  David Lam ,  Kevin W. Wenzel ,  Ilya Pokidov

    IPC: B29C49/64 ,  B29B13/02 ,  B29C35/08 ,  H05B6/70 ,  B29B13/08 ,  H05B6/64 ,  B29K67/00 ,  B29L31/00

    Abstract: Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

    Method and Apparatus for Processing Dielectric Materials Using Microwave Energy
    6.
    发明申请
    Method and Apparatus for Processing Dielectric Materials Using Microwave Energy 审中-公开

    公开(公告)号：US20170173846A1

    公开(公告)日：2017-06-22

    申请号：US14978091

    申请日：2015-12-22

    Applicant: MKS Instruments, Inc.

    Inventor： Xing Chen ,  David Lam ,  Kevin W. Wenzel ,  Ilya Pokidov

    IPC: B29C49/64

    CPC classification number: B29C49/64 ,  B29B13/024 ,  B29C35/0805 ,  B29C49/6418 ,  B29C2035/0855 ,  B29K2067/003 ,  B29L2031/712 ,  H05B6/707

    Abstract: Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

    Microwave plasma applicator with improved power uniformity
    7.
    发明授权
    Microwave plasma applicator with improved power uniformity 有权

    公开(公告)号：US09653266B2

    公开(公告)日：2017-05-16

    申请号：US14645837

    申请日：2015-03-12

    Applicant: MKS Instruments, Inc.

    Inventor： Xing Chen ,  Chengxiang Ji ,  Erin Madden ,  Ilya Pokidov ,  Kevin W. Wenzel

    IPC: H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/32229 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/32522 ,  H05H1/46 ,  H05H2001/4622

    Abstract: An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

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