公开(公告)号：US06825126B2

公开(公告)日：2004-11-30

申请号：US10422859

申请日：2003-04-25

申请人： Masayuki Asai ,  Sadayoshi Horii ,  Kanako Kitayama ,  Masayuki Tsuneda

发明人： Masayuki Asai ,  Sadayoshi Horii ,  Kanako Kitayama ,  Masayuki Tsuneda

IPC分类号： H01L21302

CPC分类号： C23C16/0218 ,  C23C16/0236 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/56

摘要： It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature. In the film-forming step, after the substrate temperature is raised up to the film-forming temperature, a film-forming process is performed by a thermal CVD method by supplying a source gas onto the substrate (205), and thereafter, the RPO process is performed (206). In this film-forming step, the film-forming source supply onto the substrate and the RPO process are preferably repeated a plurality of times.

摘要翻译： 本发明的一个目的是有效地和有效地抑制沉积在反应室中的积层膜的排出气体的影响，并减少孵化时间以改善薄膜的平整度。 半导体器件的制造方法包括预处理步骤和成膜步骤。 在预处理步骤中，将氢自由基供应到基板（202）上的RPH（远程等离子体氢化）方法，此后，向基板（203）供给氮自由基的RPN（远程等离子体氮化）工艺， 在衬底温度升高期间执行将氧自由基供应到衬底（204）上的RPO（远程等离子体氧化）工艺，以将衬底温度升高到成膜温度。 在成膜步骤中，在衬底温度升高到成膜温度之后，通过将源气体供应到衬底（205）上，通过热CVD法进行成膜工艺，此后，RPO 进行处理（206）。 在该成膜步骤中，优选重复多次重复供给到基板上的成膜源和RPO工艺。

公开(公告)号：US20070087579A1

公开(公告)日：2007-04-19

申请号：US10574893

申请日：2005-03-08

申请人： Kanako Kitayama ,  Sadayoshi Horii

发明人： Kanako Kitayama ,  Sadayoshi Horii

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32477 ,  C23C16/4405 ,  H01J37/32522 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31691

摘要： A semiconductor device manufacturing method by which a process chamber can be self-cleaned, while keeping a temperature in the process chamber low or a semiconductor device manufacturing method by which a high-k film adhering in the process chamber can be effectively removed. The method is provided with a pre-coat process, a film forming process and a cleaning process. Activated F* or Cl* by remote plasma passes through a high-k film (31), reacts to a pre-coat film (30) composed of SiO2 or Si. Since the pre-coat film (30) peels in pieces, the high-k film over the pre-coat film can be removed together.

摘要翻译： 可以在将处理室内的温度保持在较低水平的状态下对处理室进行自清洁的半导体器件制造方法或能够有效地除去附着在处理室中的高k膜的半导体器件的制造方法。 该方法具有预涂工艺，成膜工艺和清洁工艺。 远程等离子体激活的F *或Cl *通过高k膜（31），与由SiO 2或Si组成的预涂膜（30）反应。 由于预涂膜（30）剥离，因此可以一起除去预涂膜上的高k膜。

公开(公告)号：US06787481B2

公开(公告)日：2004-09-07

申请号：US10375131

申请日：2003-02-28

申请人： Masayuki Asai ,  Hisashi Nomura ,  Sadayoshi Horii

发明人： Masayuki Asai ,  Hisashi Nomura ,  Sadayoshi Horii

IPC分类号： H01L2131

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/31604

摘要： A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit 9 is supplied into a reaction chamber 1 through a shower head 6 to form an amorphous thin film including a hafnium oxide film (HfO2 film) on a substrate 4 which is rotating. In the film-modifying step, a radical generated in a reactant activation unit 11 is supplied through the same shower head 6 as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step. By a controller 25, the film-forming step and the film-modifying step are subsequently repeated two or more times in the same reaction chamber 1 so as to form a semiconductor device.

摘要翻译： 半导体器件的制造方法可以在衬底上有效地形成含有少量杂质的无定形薄膜，而无需快速退火处理和频繁的清洗工艺。 一种制造半导体器件的方法包括成膜步骤和薄膜修饰步骤。 在成膜步骤中，来自成膜原料供给单元9的成膜气体通过喷淋头6供给到反应室1中，以在基板上形成包含氧化铪膜（HfO 2膜）的非晶质薄膜 4是旋转的。 在膜改性步骤中，通过与用于供给成膜气体相同的喷头6供给在反应物活化单元11中产生的自由基，以除去在形成于膜中的膜中的杂质的特定元素 成膜步骤。 通过控制器25，随后在同一反应室1中重复两次或更多次的成膜步骤和膜修饰步骤，以形成半导体器件。

公开(公告)号：US07531467B2

公开(公告)日：2009-05-12

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/31

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device.The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US07524766B2

公开(公告)日：2009-04-28

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

公开(公告)号：US20070042581A1

公开(公告)日：2007-02-22

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/24

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US20050250341A1

公开(公告)日：2005-11-10

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

公开(公告)号：US08728935B2

公开(公告)日：2014-05-20

申请号：US12974884

申请日：2010-12-21

申请人： Kazuhiro Harada ,  Hideharu Itatani ,  Sadayoshi Horii

发明人： Kazuhiro Harada ,  Hideharu Itatani ,  Sadayoshi Horii

IPC分类号： H01L21/44

CPC分类号： C23C16/34 ,  C23C16/45525 ,  H01L21/28088 ,  H01L21/76834 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas; (c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and (d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film, wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere.

摘要翻译： 提供一种能够最小限度地防止由金属膜氧化引起的特性劣化的半导体器件的制造方法以及基板处理装置。 制造半导体器件的方法包括：（a）将衬底装载到处理容器中; （b）使用化学沉积法在所述基板上形成金属膜，通过将处理气体供给到所述处理容器中并排出所述处理气体; （c）使用化学沉积法在所述金属膜上形成氮化铝膜，通过向所述处理容器中供应含铝源气体和含氮气体并排出所述含铝源气体和所述含氮气体; 以及（d）在形成金属膜和氮化铝膜之后，从处理容器中卸载基板，其中在保持处理容器的内部具有氧气流的同时连续执行步骤（b）和步骤（c） 自由的气氛。

公开(公告)号：US08404603B2

公开(公告)日：2013-03-26

申请号：US12825012

申请日：2010-06-28

申请人： Arito Ogawa ,  Sadayoshi Horii ,  Taketoshi Sato ,  Hideharu Itatani ,  Nobuyuki Mise ,  Osamu Tonomura

发明人： Arito Ogawa ,  Sadayoshi Horii ,  Taketoshi Sato ,  Hideharu Itatani ,  Nobuyuki Mise ,  Osamu Tonomura

IPC分类号： H01L21/31

CPC分类号： H01L21/31616 ,  C23C16/303 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L28/40

摘要： A method of manufacturing a semiconductor device. In the method, an aluminum-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminum precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminum precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminum-containing insulation film is formed on the aluminum-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.

摘要翻译： 一种制造半导体器件的方法。 在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜， 将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程， 氧化前体进入处理室并从处理室排出氧化前体。 另外，对基板进行热处理。

公开(公告)号：US08193083B2

公开(公告)日：2012-06-05

申请号：US12230782

申请日：2008-09-04

申请人： Sadayoshi Horii ,  Yoshinori Imai ,  Mika Karasawa

发明人： Sadayoshi Horii ,  Yoshinori Imai ,  Mika Karasawa

IPC分类号： H01L21/44

CPC分类号： C23C16/0281 ,  C23C16/409 ,  H01L21/3141 ,  H01L21/31691 ,  H01L28/55

摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.

摘要翻译： 本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序， 钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序 在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。