公开(公告)号：US06534851B1

公开(公告)日：2003-03-18

申请号：US09642376

申请日：2000-08-21

申请人： Michael Antonell ,  Erik Cho Houge ,  Nitin Patel ,  Larry E. Plew ,  Catherine Vartuli

发明人： Michael Antonell ,  Erik Cho Houge ,  Nitin Patel ,  Larry E. Plew ,  Catherine Vartuli

IPC分类号： H01L2306

CPC分类号： H01L21/67346 ,  H01L22/20 ,  H01L22/34

摘要： A modular substrate-based processing scheme for producing semiconductor devices provides multiple modular processing units which may be arranged together to form any of various cohesive processing units or they may be individually or sequentially processed through standard semiconductor processing equipment. The cohesive processing units are processed unitarily providing for multiple modular processing units to be processed simultaneously. The modular processing units may be formed of a thick semiconductor substrate or a semiconductor substrate mounted on a further substrate such as a ceramic material. The modular processing units may each contain ribs, grooves, posts or other features to aid in handling and placement of the individual units.

摘要翻译： 用于制造半导体器件的基于模块化基板的处理方案提供多个模块化处理单元，其可以被布置在一起以形成各种内聚处理单元中的任何一个，或者可以通过标准半导体处理设备单独或顺序地处理。 整体处理单元被一体处理，提供要同时处理的多个模块化处理单元。 模块化处理单元可以由安装在诸如陶瓷材料的另外的基板上的厚半导体衬底或半导体衬底形成。 模块化处理单元可以各自包含肋，槽，柱或其他特征以帮助处理和放置各个单元。

公开(公告)号：US06713409B2

公开(公告)日：2004-03-30

申请号：US10303280

申请日：2002-11-25

申请人： Michael Antonell ,  Erik Cho Houge ,  Nitin Patel ,  Larry E. Plew ,  Catherine Vartuli

发明人： Michael Antonell ,  Erik Cho Houge ,  Nitin Patel ,  Larry E. Plew ,  Catherine Vartuli

IPC分类号： H01L2100

CPC分类号： H01L21/67346 ,  H01L22/20 ,  H01L22/34

摘要： A manufacturing method using a modular substrate-based processing scheme for producing semiconductor devices, provides multiple modular processing units which may be arranged together to form any of various cohesive processing units or individually or sequentially processed through standard semiconductor processing equipment. The cohesive processing units are processed unitarily providing for multiple modular processing units to be processed simultaneously. The modular processing units may be formed of a thick semiconductor substrate or a semiconductor substrate mounted on a further substrate such as a ceramic material. The modular processing units may each contain ribs, grooves, posts or other features to aid in handling and placement of the individual units.

摘要翻译： 使用基于模块化的基于基板的处理方法来制造半导体器件的制造方法提供了多个模块化处理单元，其可以被布置在一起以形成任何各种内聚处理单元，或者通过标准半导体处理设备单独地或顺序地处理。 整体处理单元被一体处理，提供要同时处理的多个模块化处理单元。 模块化处理单元可以由安装在诸如陶瓷材料的另外的基板上的厚半导体衬底或半导体衬底形成。 模块化处理单元可以各自包含肋，槽，柱或其他特征以帮助处理和放置各个单元。

公开(公告)号：US06695572B2

公开(公告)日：2004-02-24

申请号：US09966156

申请日：2001-09-28

申请人： Michael Antonell ,  Erik Cho Houge ,  Larry E. Plew ,  Catherine Vartuli ,  Jennifer Juszczak

发明人： Michael Antonell ,  Erik Cho Houge ,  Larry E. Plew ,  Catherine Vartuli ,  Jennifer Juszczak

IPC分类号： B65G4907

CPC分类号： H01L21/6732

摘要： A method and apparatus for minimizing the surface contamination of semiconductor wafers (11) during the semiconductor device manufacturing process. Semiconductor wafers (11) are stored in a storage cassette (12) with their face sides (17) facing downward and their back sides (16) facing upward. Particulate contamination present on the back sides of the wafers is thereby secured to the wafers by the force of gravity, and the faces of the wafers are shielded from falling debris. An automated wafer handling device (19) is provided with a rotary joint (22) to accomplish the wafer flipping motion before inserting a wafer into a cassette and after removing the wafer from the cassette.

摘要翻译： 一种在半导体器件制造过程中最小化半导体晶片（11）的表面污染的方法和装置。 半导体晶片（11）被储存在存储盒（12）中，其表面（17）面向下并且它们的背面（16）面向上。 因此，通过重力将晶片的背面存在的颗粒污染物固定在晶片上，并且晶片的表面被遮蔽而不会掉落。 自动晶片处理装置（19）设置有旋转接头（22），以在将晶片插入盒内并在从盒中取出晶片之后实现晶片翻转运动。

公开(公告)号：US06606371B2

公开(公告)日：2003-08-12

申请号：US09745236

申请日：2000-12-19

申请人： Michael Antonell ,  Erik Cho Houge ,  John Martin McIntosh ,  Larry E. Plew ,  Catherine Vartuli

发明人： Michael Antonell ,  Erik Cho Houge ,  John Martin McIntosh ,  Larry E. Plew ,  Catherine Vartuli

IPC分类号： G21K106

CPC分类号： G21K1/06 ,  G21K2201/062 ,  G21K2201/064 ,  G21K2201/067

摘要： A reflective lens with at least one curved surface formed of polycrystalline material. In one embodiment, a lens structure includes a substrate having a surface of predetermined curvature and a film formed along a surface of the substrate with multiple individual members each having at least one similar orientation relative to the portion of the substrate surface adjacent the member such that collectively the members provide predictable angles for diffraction of x-rays generated from a common source. A system is also provided for performing an operation with x-rays. In one embodiment, a system includes a source for generating the x-rays, a polycrystalline surface region having crystal spacing suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, and transmitting the reflected x-rays to a reference position. An associated method includes providing x-rays to polycrystalline surface region having crystal spacings suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, transmitting the reflected x-rays to a reference position and positioning a sample between the surface region and the reference position so that the x-rays are transmitted through the sample.

摘要翻译： 具有由多晶材料形成的至少一个曲面的反射透镜。 在一个实施例中，透镜结构包括具有预定曲率的表面的基底和沿着基底的表面形成的膜，多个单独的构件各自具有相对于邻近构件的基底表面的部分的至少一个相似的取向，使得 共同地，这些构件为从公共源产生的x射线的衍射提供可预测的角度。 还提供了一种用于使用X射线进行操作的系统。 在一个实施例中，系统包括用于产生x射线的源，具有适合于沿着该区域以相同的布拉格角反射多个x射线的晶体间距的多晶表面区域，以及将反射的x射线透射到 参考位置。 相关联的方法包括向具有晶体间距的多晶表面区域提供x射线，该晶体间距适于沿着该区域以相同的布拉格角反射多个x射线，将反射的x射线透射到参考位置，并将样品定位在表面 区域和参考位置，使得x射线透射通过样品。

公开(公告)号：US06899596B2

公开(公告)日：2005-05-31

申请号：US10121370

申请日：2002-04-12

申请人： Michael Antonell ,  Jennifer A. Antonell ,  Erik Cho Houge ,  Ryan Keith Maynard ,  Darrell L. Simpson

发明人： Michael Antonell ,  Jennifer A. Antonell ,  Erik Cho Houge ,  Ryan Keith Maynard ,  Darrell L. Simpson

IPC分类号： B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/304 ,  H01L21/306 ,  B24B1/00

CPC分类号： C09G1/02 ,  B24B37/044

摘要： A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.

摘要翻译： 使用具有极性的化学活性浆料的化学机械抛光（CMP）方法，其选择为影响被抛光的多晶表面的各个晶面的相对氧化速率。 控制浆料极性以在CMP过程期间平衡来自相应结晶平面的材料去除速率。 可以将极性溶质加入到碱性溶剂中以获得所需的极性。 用于钨膜的CMP方法可以使用含有研磨剂，氧化剂和极性小于水的极性溶质的水基浆料。 研磨剂可以是胶体二氧化硅，氧化剂可以是过氧化氢，溶质可以是苯。