Miniature RF and Microwave Components and Methods for Fabricating Such Components
    8.
    发明申请
    Miniature RF and Microwave Components and Methods for Fabricating Such Components 有权
    微型射频和微波元件及其制造方法

    公开(公告)号:US20150311575A1

    公开(公告)日:2015-10-29

    申请号:US14675147

    申请日:2015-03-31

    CPC classification number: H01P3/06 C25D1/003 C25D5/022 C25D5/10

    Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

    Abstract translation: 提供RF和微波辐射引导或控制部件,其可以是单片的,其可以由多个电沉积操作和/或从多个沉积的材料层形成,其可以包括开关,电感器,天线,传输线,滤波器 ,混合耦合器,天线阵列和/或其他主动或无源部件。 部件可以包括用于将牺牲材料与结构材料分离的非辐射入口和非辐射出口通道。 优选的形成方法使用电化学制造技术(例如包括选择性沉积,体积沉积,蚀刻操作和平坦化操作)和后沉积工艺(例如选择性蚀刻操作和/或反向填充操作)。

    Method for Fabricating Miniature Structures or Devices such as RF and Microwave Components
    9.
    发明申请
    Method for Fabricating Miniature Structures or Devices such as RF and Microwave Components 有权
    用于制造微型结构或诸如RF和微波组件的设备的方法

    公开(公告)号:US20140197904A1

    公开(公告)日:2014-07-17

    申请号:US14194592

    申请日:2014-02-28

    Abstract: Multi-layer, multi-material fabrication methods include depositing at least one structural material and at least one sacrificial material during the formation of each of a plurality of layers wherein deposited materials for each layer are planarized to set a boundary level for the respective layer and wherein during formation of at least one layer at least three materials are deposited with a planarization operation occurring before deposition of the last material to set a planarization level above the layer boundary level and wherein a planarization occurs after deposition of the last material level above the layer boundary level and wherein a planarization occurs after deposition of the last material whereby the boundary level for the layer is set. Some formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

    Abstract translation: 多层多材料制造方法包括在形成多个层期间沉积至少一种结构材料和至少一种牺牲材料,其中每层的沉积材料被平坦化以设定各层的边界水平, 其中在形成至少一个层期间,沉积至少三种材料,其中在沉积最终材料之前发生的平坦化操作,以将平坦化水平设置在层边界水平之上,并且其中在沉积层上方的最后材料层之后发生平坦化 并且其中在沉积最后的材料之后发生平坦化,由此设置该层的边界水平。 一些形成方法使用电化学制造技术(例如包括选择性沉积,体积沉积,蚀刻操作和平面化操作)和后沉积工艺(例如选择性蚀刻操作和/或反向填充操作)。

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