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    VARIABLE DENSITY STORAGE DEVICE
    1.
    发明公开
    VARIABLE DENSITY STORAGE DEVICE 审中-公开

    公开(公告)号：US20240160386A1

    公开(公告)日：2024-05-16

    申请号：US18492569

    申请日：2023-10-23

    Applicant: Micron Technology, Inc.

    Inventor： Christopher Joseph Bueb ,  Aravind Ramamoorthy ,  Anand Mudlapur ,  Zheng Wang ,  Olivier Duval

    IPC: G06F3/06

    CPC classification number: G06F3/0659 ,  G06F3/0619 ,  G06F3/0632 ,  G06F3/0679

    Abstract: Methods, systems, and devices for variable density storage device are described. A memory system may receive a write command to write data to the memory system. The memory system may write the data to a first set of memory cells of the memory system using a first write operation based on receiving the write command. The first set of memory cells store three or fewer bits of information in a single memory cell. The memory system may identify whether to transfer the data to a second set of memory cells on one or more parameters associated with the data. The second set of memory cells may store more bits of information in a single memory cell than the first set of memory cells. The memory system may transfer the data to the second set of memory cells based on identifying that the data is to be transferred.

    Detecting failure of a thermal sensor in a memory device
    2.
    发明授权
    Detecting failure of a thermal sensor in a memory device 有权

    公开(公告)号：US11282577B1

    公开(公告)日：2022-03-22

    申请号：US17003829

    申请日：2020-08-26

    Applicant: Micron Technology, Inc.

    Inventor： Christopher J. Bueb ,  Aravind Ramamoorthy

    IPC: G11C16/04 ,  G11C16/22 ,  G11C11/56 ,  G11C16/26 ,  G11C16/10

    Abstract: A program operation on a subset of a plurality of memory cells is performed. A sense operation on the subset of the plurality of memory cells is performed to determine respective values stored in the subset of the plurality of memory cells. One or more patterns of pre-programmed memory cells of the memory device are identified. The one or more patterns comprise representations of values of the pre-programmed memory cells when at least one of a first temperature criterion or a second temperature criterion is satisfied. The respective values of the subset of the plurality of memory cells are compared to the values of the pre-programmed memory cells in the one or more patterns. Based on the comparison, a reading from a thermal sensor coupled to the memory device is determined to satisfy an accuracy criterion.

    STORAGE PROVISIONING IN A DATA STORAGE DEVICE
    4.
    发明申请
    STORAGE PROVISIONING IN A DATA STORAGE DEVICE 有权

    公开(公告)号：US20220269423A1

    公开(公告)日：2022-08-25

    申请号：US17180245

    申请日：2021-02-19

    Applicant: Micron Technology, Inc.

    Inventor： Aravind Ramamoorthy

    IPC: G06F3/06 ,  G06F21/64 ,  G06F21/78

    Abstract: Systems and methods for modifying a usage limit of a data storage device include a host interface; integrated circuit memory cells; and a processing device coupled to the host interface to provide commands with addresses to access the integrated circuit memory cells according to the address, and configured to execute firmware to perform: operations requested by commands received via the host interface; and updates to a usage limit of the data storage device.

    MEMORY DEVICE HEATING IN COLD ENVIRONMENTS
    5.
    发明公开
    MEMORY DEVICE HEATING IN COLD ENVIRONMENTS 审中-公开

    公开(公告)号：US20240170029A1

    公开(公告)日：2024-05-23

    申请号：US18516769

    申请日：2023-11-21

    Applicant: Micron Technology, Inc.

    Inventor： Christopher Joseph Bueb ,  Poorna Kale ,  Aravind Ramamoorthy

    IPC: G11C7/04 ,  G11C7/20 ,  H10N70/00

    CPC classification number: G11C7/04 ,  G11C7/20 ,  H10N70/861

    Abstract: Methods, systems, and devices for memory device heating in cold environments are described. A memory system may use system components to accelerate the heating of a non-volatile memory device that stores boot data associated with a boot up procedure at a host system. For example, the memory system may determine that a temperature associated with the memory system fails to satisfy a threshold. Based on the temperature failing to satisfy the threshold, a controller of the memory system may perform a heating procedure that increases a heat of and emitted by the controller (e.g., a heating element coupled with the controller) to accelerate the heating of the non-volatile memory device. The memory system may read the boot data from the non-volatile memory device based on the heating procedure and transmit the boot data to the host system.

    DETECTING FAILURE OF A THERMAL SENSOR IN A MEMORY DEVICE
    8.
    发明申请
    DETECTING FAILURE OF A THERMAL SENSOR IN A MEMORY DEVICE 有权

    公开(公告)号：US20220180935A1

    公开(公告)日：2022-06-09

    申请号：US17677332

    申请日：2022-02-22

    Applicant: Micron Technology, Inc.

    Inventor： Christopher J. Bueb ,  Aravind Ramamoorthy

    IPC: G11C16/22 ,  G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10

    Abstract: Respective values of a subset of the plurality of memory cells of a memory device are compared to a pattern of pre-programmed memory cells. The pattern pre-programmed memory cells comprise representations of values of the pattern of pre-programmed memory cells when a temperature criterion is satisfied. Responsive to determining that at least a threshold number of the respective values of the subset matches the pattern of pre-programmed memory cells, a temperature reading from a thermal sensor coupled to the memory device is identified. Responsive to determining that the temperature reading does not correspond to a temperature criterion, determining that the thermal sensor has failed.

    DETECTING FAILURE OF A THERMAL SENSOR IN A MEMORY DEVICE
    9.
    发明申请
    DETECTING FAILURE OF A THERMAL SENSOR IN A MEMORY DEVICE 有权

    公开(公告)号：US20220068398A1

    公开(公告)日：2022-03-03

    申请号：US17003829

    申请日：2020-08-26

    Applicant: Micron Technology, Inc.

    Inventor： Christopher J. Bueb ,  Aravind Ramamoorthy

    IPC: G11C16/22 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

    Abstract: A program operation on a subset of a plurality of memory cells is performed. A sense operation on the subset of the plurality of memory cells is performed to determine respective values stored in the subset of the plurality of memory cells. One or more patterns of pre-programmed memory cells of the memory device are identified. The one or more patterns comprise representations of values of the pre-programmed memory cells when at least one of a first temperature criterion or a second temperature criterion is satisfied. The respective values of the subset of the plurality of memory cells are compared to the values of the pre-programmed memory cells in the one or more patterns. Based on the comparison, a reading from a thermal sensor coupled to the memory device is determined to satisfy an accuracy criterion.

    Package including an interposer having at least one topological feature
    10.
    发明授权
    Package including an interposer having at least one topological feature 有权
    包括具有至少一个拓扑特征的插入器的封装

    公开(公告)号：US08999763B2

    公开(公告)日：2015-04-07

    申请号：US14300130

    申请日：2014-06-09

    Applicant: Micron Technology, Inc.

    Inventor： Steven Eskildsen ,  Aravind Ramamoorthy

    IPC: H01L21/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

    CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49531 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments include but are not limited to apparatuses and systems including semiconductor packages, e.g. memory packages, having an interposer including at least one topological feature, such as a depression in a surface of the interposer, a die coupled to the surface of the interposer, and an encapsulant material formed over the die and the interposer, and disposed in the at least one depression to resist movement of the encapsulant material relative to the interposer. Other embodiments may be described and claimed.

    Abstract translation: 实施例包括但不限于包括半导体封装的设备和系统。 具有包括至少一个拓扑特征（例如插入件的表面中的凹陷）的插入件的存储器封装，耦合到插入件的表面的管芯，以及形成在管芯和插入件上的密封剂材料，并且设置在 至少一个凹陷以抵抗密封材料相对于插入件的移动。 可以描述和要求保护其他实施例。

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