公开(公告)号：US11889691B2

公开(公告)日：2024-01-30

申请号：US17211580

申请日：2021-03-24

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Dong Wang ,  Rui Zhang ,  Da Xing ,  Xiao Li ,  Pei Qiong Cheung ,  Xiao Zeng

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/40 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/40 ,  H10B43/40

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

公开(公告)号：US20230395150A1

公开(公告)日：2023-12-07

申请号：US18327846

申请日：2023-06-01

Applicant: Micron Technology, Inc.

Inventor： Rui Zhang ,  Shuangqiang Luo ,  Mohad Baboli ,  Rajasekhar Venigalla

IPC: G11C16/04 ,  H10B41/35 ,  H10B41/27 ,  H10B43/27 ,  H10B43/35 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC classification number: G11C16/0483 ,  H10B41/35 ,  H10B41/27 ,  H10B43/27 ,  H10B43/35 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/76831

Abstract: A microelectronic device includes a stack structure including blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. The blocks including a stadium structure including opposing staircase structures each having steps comprising edges of the tiers. The blocks further include a filled trench vertically overlying and within horizontal boundaries of the stadium structure. The filled trench includes dielectric liner structures and additional dielectric liner structures having a different material composition than that of the dielectric liner structures and alternating with the dielectric liner structures. The filled trench also includes dielectric fill material overlying an alternating sequence of the dielectric liner structures and additional dielectric liner structures.

公开(公告)号：US20230328857A1

公开(公告)日：2023-10-12

申请号：US18335885

申请日：2023-06-15

Applicant: Micron Technology, Inc.

Inventor： Anil Tipirneni ,  Rui Zhang

IPC: H05B45/20

CPC classification number: H05B45/20

Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.

公开(公告)号：US10555394B2

公开(公告)日：2020-02-04

申请号：US16276443

申请日：2019-02-14

Applicant: Micron Technology, Inc.

Inventor： Anil Tipirneni ,  Rui Zhang

IPC: H05B33/08

Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.

公开(公告)号：US20190182916A1

公开(公告)日：2019-06-13

申请号：US16276443

申请日：2019-02-14

Applicant: Micron Technology, Inc.

Inventor： Anil Tipirneni ,  Rui Zhang

IPC: H05B33/08

CPC classification number: H05B33/086

Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.

公开(公告)号：US20240049468A1

公开(公告)日：2024-02-08

申请号：US18381791

申请日：2023-10-19

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Dong Wang ,  Rui Zhang ,  Da Xing ,  Xiao Li ,  Pei Qiong Cheung ,  Xiao Zeng

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/40 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/40 ,  H10B43/40

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

公开(公告)号：US20230209824A1

公开(公告)日：2023-06-29

申请号：US17575939

申请日：2022-01-14

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Christopher Larsen ,  Rui Zhang

IPC: H01L27/11582 ,  G11C16/04 ,  H01L23/48 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L23/481 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

Abstract: Memory circuitry comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers of the laterally-spaced memory blocks extend from the memory-array region into a stair-step region. Individual stairs in the stair-step region comprise one of the conductive tiers. Conductive vias are individually directly against conducting material that is in the one conductive tier in one of the individual stairs. Insulator material in the stair-step region is directly above the stairs. An insulative-material lining is circumferentially around and extends elevationally along individual of the conductive vias between the individual conductive vias and the insulator material. Individual of the insulative-material linings and the insulator material comprise an interface there-between. Other embodiments, including methods, are disclosed.

公开(公告)号：US20250056802A1

公开(公告)日：2025-02-13

申请号：US18930589

申请日：2024-10-29

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Dong Wang ,  Rui Zhang ,  Da Xing ,  Xiao Li ,  Pei Qiong Cheung ,  Xiao Zeng

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/40 ,  H10B43/40

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

公开(公告)号：US12167604B2

公开(公告)日：2024-12-10

申请号：US18381791

申请日：2023-10-19

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Dong Wang ,  Rui Zhang ,  Da Xing ,  Xiao Li ,  Pei Qiong Cheung ,  Xiao Zeng

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/40 ,  H10B43/40

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

公开(公告)号：US20240365447A1

公开(公告)日：2024-10-31

申请号：US18767682

申请日：2024-07-09

Applicant: Micron Technology, Inc.

Inventor： Anil Tipirneni ,  Rui Zhang

IPC: H05B45/20

CPC classification number: H05B45/20

Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.