公开(公告)号：US20230335200A1

公开(公告)日：2023-10-19

申请号：US18130589

申请日：2023-04-04

Applicant: Micron Technology, Inc.

Inventor： Chengbin Sun ,  Carmine Miccoli ,  Violante Moschiano ,  Srinath Venkatesan ,  Walter Di Francesco

IPC: G11C16/26 ,  G11C16/08 ,  G11C16/34

CPC classification number: G11C16/26 ,  G11C16/08 ,  G11C16/3404 ,  G11C2207/2254

Abstract: A memory device includes a memory array and control logic, operatively coupled to the memory array, to perform operations including causing a read operation to be initiated with respect to a set of target cells, determining whether the read operation has failed, in response to determining that the read operation has failed, obtaining, for each group of adjacent cells, respective cell state information, assigning, based on the cell state information, each target cell of the set of target cells to a respective state information bin of a set of state information bins, determining whether to initiate auto-calibrated corrective read, in response to determining to initiate auto-calibrated corrective read, performing read level offset calibration to determine a set of calibrated read level offsets, and causing the set of target cells to be read using the set of calibrated read level offsets.

公开(公告)号：US11205660B2

公开(公告)日：2021-12-21

申请号：US16705388

申请日：2019-12-06

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Chris M. Carlson ,  Terry H. Kim ,  Kunal Shrotri ,  Srinath Venkatesan

IPC: H01L27/11582 ,  H01L21/3215 ,  H01L21/3115 ,  H01L27/11556

Abstract: A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. The strings of memory cells in the stack comprise channel-material strings and storage-material strings extending through the insulative tiers and the conductive tiers. At least some of the storage material of the storage-material strings in individual of the insulative tiers are intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers. Other aspects, including method, are disclosed.

公开(公告)号：US20210175247A1

公开(公告)日：2021-06-10

申请号：US16705388

申请日：2019-12-06

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Chris M. Carlson ,  Terry H. Kim ,  Kunal Shrotri ,  Srinath Venkatesan

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/3115 ,  H01L21/3215

Abstract: A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. The strings of memory cells in the stack comprise channel-material strings and storage-material strings extending through the insulative tiers and the conductive tiers. At least some of the storage material of the storage-material strings in individual of the insulative tiers are intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers. Other aspects, including method, are disclosed.

公开(公告)号：US11751393B2

公开(公告)日：2023-09-05

申请号：US17524987

申请日：2021-11-12

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Chris M. Carlson ,  Terry H. Kim ,  Kunal Shrotri ,  Srinath Venkatesan

IPC: H01L27/11582 ,  H10B43/27 ,  H01L21/3215 ,  H01L21/3115 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L21/3115 ,  H01L21/3215 ,  H10B41/27

Abstract: A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. The strings of memory cells in the stack comprise channel-material strings and storage-material strings extending through the insulative tiers and the conductive tiers. At least some of the storage material of the storage-material strings in individual of the insulative tiers are intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers. Other aspects, including method, are disclosed.

公开(公告)号：US20220077186A1

公开(公告)日：2022-03-10

申请号：US17524987

申请日：2021-11-12

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Chris M. Carlson ,  Terry H. Kim ,  Kunal Shrotri ,  Srinath Venkatesan

IPC: H01L27/11582 ,  H01L21/3215 ,  H01L21/3115 ,  H01L27/11556

Abstract: A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. The strings of memory cells in the stack comprise channel-material strings and storage-material strings extending through the insulative tiers and the conductive tiers. At least some of the storage material of the storage-material strings in individual of the insulative tiers are intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers. Other aspects, including method, are disclosed.