摘要:
This invention belongs to the field of biochemical engineering and relates to a method of cyclic utilization of water during separation of succinic acid made by fermentation. This invention uses water from separation process for aerobic growth of E.coli AFP111 and production of succinic acid by anaerobic fermentation, obtaining final succinic acid concentration of 55 g/L and yield of 91.6%. Compared with results of fermentation using culture medium prepared from tap water, succinic acid concentration and productivity increased by 8.5% and 8.46%, respectively. An outstanding advantage of this invention is recovery and utilization of evaporated water during separation of succinic acid, realizing cyclic use of water during industrial production of succinic acid, which is an environment-friendly process. Also, as evaporated water generated during separation of succinic acid contains small amount of organic acids such as acetic acid and formic acid, if this water is used for aerobic growth of thalli, the small amount of organic acids contained therein can be used as gluconeogenesis carbon source, improving activity of some key enzymes in cell and favoring succinic acid production by anaerobic fermentation of thalli.
摘要:
This invention belongs to the field of biochemical engineering and relates to a method of cyclic utilization of water during separation of succinic acid made by fermentation. This invention uses water from separation process for aerobic growth of E. coli AFP111 and production of succinic acid by anaerobic fermentation, obtaining final succinic acid concentration of 55 g/L and yield of 91.6%. Compared with results of fermentation using culture medium prepared from tap water, succinic acid concentration and productivity increased by 8.5% and 8.46%, respectively. An outstanding advantage of this invention is recovery and utilization of evaporated water during separation of succinic acid, realizing cyclic use of water during industrial production of succinic acid, which is an environment-friendly process. Also, as evaporated water generated during separation of succinic acid contains small amount of organic acids such as acetic acid and formic acid, if this water is used for aerobic growth of thalli, the small amount of organic acids contained therein can be used as gluconeogenesis carbon source, improving activity of some key enzymes in cell and favoring succinic acid production by anaerobic fermentation of thalli.
摘要:
The present invention is generally directed to dermatological devices and methods in which one or more skin characteristics, such as the melanin index, are determined by analyzing radiation backscattered from a skin region illuminated by at least one, and preferably, two or more wavelengths, e.g., in a range of about 600 nm to about 900 nm. In many embodiments, the radiation is coupled to the skin via a waveguide, and an optical sensor is employed to ascertain contact between the waveguide (e.g., a waveguide surface adapted for contact with the skin) and the skin.
摘要:
Non-invasive, optical apparatus and methods for the direct measurement of hemoglobin derivatives and other analyte concentration levels in blood using diffuse reflection and transmission spectroscopy in the wavelength region 400-1350 nm which includes the transparent tissue window from approximately 610 to 1311 nanometers and, using diffuse reflection spectroscopy, the mid-infrared region from 4.3-12 microns in wavelength. Large area light collection techniques are utilized to provide a much larger pulsate signal than can be obtain with current sensor technology. Sensors used in separate or simultaneous precision measurements of both diffuse reflection and transmission, either separately or simultaneously, from pulsate, blood-perfused tissue for the subsequent determination of the blood analytes concentrations such as arterial blood oxygen saturation (SaO2), carboxyhemoglobin (COHb), oxyhemoglobin (OHb), deoxyhemoglobin (dOHb), methemoglobin (metHb), water (H2O), hematocrit (HCT), glucose, cholesterol and proteins such as albumin and other analytes components.
摘要:
A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.
摘要:
A process of fabricating a flexible TFT back-panel on a glass support includes a step of providing a flat glass support member sufficiently thick to prevent bending during the processing. A layer of etch stop material is positioned on the upper surface of the glass support member and an insulating buffer layer is positioned on the layer of etch stop material. A TFT back-panel is positioned on the insulating buffer layer and a flexible plastic carrier is affixed to the TFT back-panel. The glass support member is etched away, whereby a flexible TFT back-panel is provided. The TFT back-panel can include a matrix of either OLED cells or LCD cells.
摘要:
Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.
摘要:
The present invention is generally directed to dermatological devices and methods in which one or more skin characteristics, such as the melanin index, are determined by analyzing radiation backscattered from a skin region illuminated by at least one, and preferably, two or more wavelengths, e.g., in a range of about 600 nm to about 900 nm. In many embodiments, the radiation is coupled to the skin via a waveguide, and an optical sensor is employed to ascertain contact between the waveguide (e.g., a waveguide surface adapted for contact with the skin) and the skin.
摘要:
Devices and methods for treating tissue with radiation, including light and other optical radiation, in a manner that is eye-safe are described. In one embodiment, a photocosmetic treatment device has a cavity into which tissue to be treated is drawn. The device determines whether the tissue is safe to treat and whether the tissue may be tissue associated with the eyes, such as an eyelid. In another embodiment, an eye-safe pulse of radiation is provided at a time interval prior to treatment of the tissue. The pulse is at a wavelength of radiation that the human eye perceives as particularly intense and uncomfortable, even though the pulse is not dangerous or destructive. If the device is oriented to treat eye tissue, directly or through the eyelid, the pulse will cause an aversive reaction in the subject being treated that inhibits the treatment.
摘要:
Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.