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    REVERSED FLEXIBLE TFT BACK-PANEL BY GLASS SUBSTRATE REMOVAL
    3.
    发明申请
    REVERSED FLEXIBLE TFT BACK-PANEL BY GLASS SUBSTRATE REMOVAL 有权
    通过玻璃基板去除反向柔性TFT背板

    公开(公告)号：US20160260752A1

    公开(公告)日：2016-09-08

    申请号：US14635865

    申请日：2015-03-02

    申请人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

    发明人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

    IPC分类号： H01L27/12 ,  H01L51/05 ,  H01L51/56 ,  H01L29/786

    CPC分类号： H01L27/1266 ,  H01L27/1222 ,  H01L27/1225 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

    摘要： The process of fabricating a flexible TFT back-panel includes depositing etch stop material on a glass support. A matrix of contact pads, gate electrodes and gate dielectric are deposited overlying the etch stop material. Vias are formed through the dielectric in communication with each pad. A matrix of TFTs is formed by depositing and patterning metal oxide semiconductor material to form an active layer of each TFT overlying the gate electrode. Source/drain metal is deposited on the active layer and in the vias in contact with the pads, the source/drain metal defining source/drain terminals of each TFT. Passivation material is deposited in overlying relationship to the TFTs. A color filter layer is formed on the passivation material and a flexible plastic carrier is affixed to the color filter. The glass support member and the etch stop material are then etched away to expose a surface of each of the pads.

    摘要翻译： 制造柔性TFT后面板的过程包括在玻璃支架上沉积蚀刻停止材料。 接触焊盘，栅极电极和栅极电介质的矩阵沉积在蚀刻停止材料上。 通过与每个焊盘连通的电介质形成通孔。 通过沉积和图案化金属氧化物半导体材料形成TFT的矩阵，以形成覆盖栅电极的每个TFT的有源层。 源极/漏极金属沉积在有源层上，并且在与焊盘接触的通孔中，源极/漏极金属限定每个TFT的源极/漏极端子。 钝化材料以与TFT相重叠的关系沉积。 在钝化材料上形成滤色器层，并将柔性塑料载体固定在滤色器上。 然后将玻璃支撑构件和蚀刻停止材料蚀刻掉以暴露每个焊盘的表面。

    FLEXIBLE TFT BACKPANEL BY GLASS SUBSTRATE REMOVAL
    4.
    发明申请
    FLEXIBLE TFT BACKPANEL BY GLASS SUBSTRATE REMOVAL 有权
    透明玻璃底板去除柔性TFT背板

    公开(公告)号：US20150263078A1

    公开(公告)日：2015-09-17

    申请号：US14216920

    申请日：2014-03-17

    申请人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

    发明人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

    IPC分类号： H01L27/32 ,  H01L51/52 ,  H01L29/786 ,  H01L51/56 ,  H01L51/00 ,  H01L27/12

    CPC分类号： H01L27/3244 ,  H01L27/1259 ,  H01L27/322 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5246 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

    摘要： A process of fabricating a flexible TFT back-panel on a glass support includes a step of providing a flat glass support member sufficiently thick to prevent bending during the processing. A layer of etch stop material is positioned on the upper surface of the glass support member and an insulating buffer layer is positioned on the layer of etch stop material. A TFT back-panel is positioned on the insulating buffer layer and a flexible plastic carrier is affixed to the TFT back-panel. The glass support member is etched away, whereby a flexible TFT back-panel is provided. The TFT back-panel can include a matrix of either OLED cells or LCD cells.

    摘要翻译： 在玻璃支架上制造柔性TFT背板的工艺包括提供足够厚的平板玻璃支撑件以防止加工过程中弯曲的步骤。 一层蚀刻停止材料定位在玻璃支撑构件的上表面上，并且绝缘缓冲层位于蚀刻停止材料层上。 TFT背板位于绝缘缓冲层上，柔性塑料载体固定在TFT后面板上。 蚀刻玻璃支撑构件，由此提供柔性TFT背面板。 TFT背面板可以包括OLED单元或LCD单元的矩阵。

    HIGH MOBILITY STABILE METAL OXIDE TFT
    8.
    发明申请
    HIGH MOBILITY STABILE METAL OXIDE TFT 有权
    高移动性稳定的金属氧化物薄膜

    公开(公告)号：US20140001462A1

    公开(公告)日：2014-01-02

    申请号：US13536641

    申请日：2012-06-28

    申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

    发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L21/467 ,  H01L21/4763 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

    摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

    摘要翻译： 一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。 包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。 蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。 在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

    Self-aligned metal oxide TFT with reduced number of masks
    9.
    发明授权
    Self-aligned metal oxide TFT with reduced number of masks 有权
    具有减少掩模数量的自对准金属氧化物TFT

    公开(公告)号：US08273600B2

    公开(公告)日：2012-09-25

    申请号：US13195882

    申请日：2011-08-02

    申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

    发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565

    摘要： A method of fabricating MOTFTs on transparent substrates by positioning opaque gate metal on the substrate front surface and depositing gate dielectric material overlying the gate metal and a surrounding area and metal oxide semiconductor material on the dielectric material. Depositing selectively removable etch stop material on the semiconductor material and photoresist on the etch stop material to define an isolation area in the semiconductor material. Removing uncovered portions of the etch stop. Exposing the photoresist from the substrate rear surface using the gate metal as a mask and removing exposed portions leaving the etch stop material overlying the gate metal covered. Etching the semiconductor material to isolate the TFT. Selectively etching the etch stop layer to leave a portion overlying the gate metal defining a channel area. Depositing and patterning conductive material to form source and drain areas on opposed sides of the channel area.

    摘要翻译： 一种在透明基板上制造MOTFT的方法，该方法是将不透明栅极金属定位在衬底前表面上，并沉积覆盖在栅极金属上的栅介质材料以及介电材料上的周围区域和金属氧化物半导体材料。 在半导体材料和蚀刻停止材料上的光致抗蚀剂上沉积选择性可移除的蚀刻停止材料以限定半导体材料中的隔离区域。 去除蚀刻停止件的未覆盖部分。 使用栅极金属作为掩模从基板后表面露出光致抗蚀剂，并去除暴露部分，留下覆盖栅极金属的蚀刻停止材料。 蚀刻半导体材料以隔离TFT。 选择性地蚀刻蚀刻停止层以留下覆盖栅极金属的部分限定沟道区域。 沉积和图案化导电材料以在通道区域的相对侧上形成源区和漏区。

    METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY
    10.
    发明申请
    METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY 有权
    具有改进的源/漏联系和可靠性的金属氧化物薄膜

    公开(公告)号：US20170033227A1

    公开(公告)日：2017-02-02

    申请号：US15225592

    申请日：2016-08-01

    申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

    发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

    IPC分类号： H01L29/786 ,  H01L23/00 ,  H01L23/31 ,  H01L29/49

    CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

    摘要翻译： 一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热 在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。 随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触，并将阈值电压调节到期望的水平。 在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。