公开(公告)号：US20140349356A1

公开(公告)日：2014-11-27

申请号：US14344608

申请日：2012-09-13

申请人： Min Jiang ,  Min Zhang ,  Jiangfeng Ma ,  Hao Wu ,  Liya Liang ,  Rongming Liu ,  Guangming Wang ,  Ping Wei

发明人： Min Jiang ,  Min Zhang ,  Jiangfeng Ma ,  Hao Wu ,  Liya Liang ,  Rongming Liu ,  Guangming Wang ,  Ping Wei

IPC分类号： C12P7/46

CPC分类号： C12P7/46 ,  C07C51/412 ,  C07C51/43 ,  C07C51/44 ,  C07C55/10

摘要： This invention belongs to the field of biochemical engineering and relates to a method of cyclic utilization of water during separation of succinic acid made by fermentation. This invention uses water from separation process for aerobic growth of E.coli AFP111 and production of succinic acid by anaerobic fermentation, obtaining final succinic acid concentration of 55 g/L and yield of 91.6%. Compared with results of fermentation using culture medium prepared from tap water, succinic acid concentration and productivity increased by 8.5% and 8.46%, respectively. An outstanding advantage of this invention is recovery and utilization of evaporated water during separation of succinic acid, realizing cyclic use of water during industrial production of succinic acid, which is an environment-friendly process. Also, as evaporated water generated during separation of succinic acid contains small amount of organic acids such as acetic acid and formic acid, if this water is used for aerobic growth of thalli, the small amount of organic acids contained therein can be used as gluconeogenesis carbon source, improving activity of some key enzymes in cell and favoring succinic acid production by anaerobic fermentation of thalli.

摘要翻译： 本发明属于生物化学工程领域，涉及通过发酵制备的琥珀酸分离期间循环利用水的方法。 本发明利用分离过程中的水分进行大肠杆菌AFP111的有氧生长，通过厌氧发酵生产琥珀酸，得到最终琥珀酸浓度为55g / L，产率为91.6％。 与使用自来水制备的培养基的发酵结果相比，琥珀酸浓度和产率分别提高了8.5％和8.46％。 本发明的突出优点是分离琥珀酸期间蒸发水的回收利用，在工业生产琥珀酸期间循环使用水，这是一个环保的工艺。 另外，由于琥珀酸分离过程中产生的蒸发水含有少量的有机酸如乙酸和甲酸，所以如果这种水用于铊的有氧生长，其中所含的少量有机酸可用作糖异生碳 来源，改善细胞中一些关键酶的活性，并通过thalli的厌氧发酵有利于琥珀酸生产。

公开(公告)号：US08805556B2

公开(公告)日：2014-08-12

申请号：US12495915

申请日：2009-07-01

申请人： Kazuaki Saiki ,  Ping-Wei Chang

发明人： Kazuaki Saiki ,  Ping-Wei Chang

IPC分类号： G05B19/18

CPC分类号： H01L21/67092 ,  G03F7/70775 ,  G03F7/7085 ,  G03F7/709 ,  H01L21/68785

摘要： A damping apparatus that supports and dampens a stage apparatus that positions and drives a stage to a target position is provided herein. The damping apparatus including a support plate part, a support force generating means, and a first controlling means. The support plate part supports the stage apparatus. The support force generating means exerts a damping action by applying a support force to the support plate part in the vertical directions. The first controlling means uses the acceleration of the stage, which is derived from a target track, to the target position, to control the support force generated by the support force generating means so as to compensate for forces that both occur as a result of the acceleration of the stage and cause the support plate part to tilt. The present invention controls vibration and the tilt of a base plate with high precision.

摘要翻译： 本文提供了一种阻尼装置，其支撑和阻尼将台架定位和驱动到目标位置的平台装置。 该阻尼装置包括支撑板部分，支撑力产生装置和第一控制装置。 支撑板部件支撑平台装置。 支撑力产生装置通过在垂直方向上向支撑板部分施加支撑力来施加阻尼作用。 第一控制装置使用从目标轨道导出的平台的加速度到目标位置，以控制由支撑力产生装置产生的支撑力，以便补偿由于 加速阶段并使支撑板部分倾斜。 本发明以高精度控制基板的振动和倾斜。

公开(公告)号：US08790970B2

公开(公告)日：2014-07-29

申请号：US11446697

申请日：2006-06-05

申请人： Yee-Chia Yeo ,  Ping-Wei Wang ,  Hao-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Ping-Wei Wang ,  Hao-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

IPC分类号： H01L21/84

CPC分类号： H01L29/785 ,  H01L21/26586 ,  H01L29/66803

摘要： A semiconductor structure includes of a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a second sidewall surface. Dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the first sidewall surface and the top surface. Further dopant ions are implanted with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surface.

摘要翻译： 半导体结构包括覆盖绝缘体层的多个半导体鳍片，覆盖所述半导体鳍片的一部分的栅极电介质和覆盖栅极电介质的栅电极。 每个半导体翅片具有顶表面，第一侧壁表面和第二侧壁表面。 掺杂离子相对于半导体鳍片的顶表面的法线以第一角度（例如，大于约7°）注入，以掺杂第一侧壁表面和顶表面。 相对于半导体鳍片的顶表面的法线注入另外的掺杂剂离子以掺杂第二侧壁表面和顶表面。

公开(公告)号：US08569303B2

公开(公告)日：2013-10-29

申请号：US12771659

申请日：2010-04-30

申请人： Damian O Arnaiz ,  Greg Brown ,  Emmanuel Claret ,  Arwed Cleve ,  David Davey ,  William Guilford ,  Seock-Kyu Khim ,  Thomas Kirkland ,  Monica J Kochanny ,  Amy Liang ,  David Light ,  John Parkinson ,  David Vogel ,  Guo Ping Wei ,  Bin Ye

发明人： Damian O Arnaiz ,  Greg Brown ,  Emmanuel Claret ,  Arwed Cleve ,  David Davey ,  William Guilford ,  Seock-Kyu Khim ,  Thomas Kirkland ,  Monica J Kochanny ,  Amy Liang ,  David Light ,  John Parkinson ,  David Vogel ,  Guo Ping Wei ,  Bin Ye

IPC分类号： A61K31/495 ,  C07D241/36

CPC分类号： C07D487/08 ,  C07B2200/07 ,  C07C217/58 ,  C07C229/08 ,  C07C229/38 ,  C07C233/78 ,  C07C255/57 ,  C07C271/20 ,  C07C2601/14 ,  C07D207/04 ,  C07D207/09 ,  C07D207/16 ,  C07D211/26 ,  C07D211/34 ,  C07D211/58 ,  C07D243/08 ,  C07D263/14 ,  C07D263/32 ,  C07D277/22 ,  C07D277/68 ,  C07D295/04 ,  C07D295/096 ,  C07D295/16 ,  C07D401/10 ,  C07D401/12 ,  C07D403/12 ,  C07D405/12 ,  C07D409/12 ,  C07D413/12 ,  C07D451/02 ,  C07D451/04

摘要： This invention is directed to compounds of formula (I): where r, q, R, R2, R3, R4, R5a, R5b, R5c, R6a, R6b, R6c, R7, R8, and R9 are described herein, as single stereoisomers or as mixtures of stereoisomers, or pharmaceutically acceptable salts, solvates, clathrates, polymorphs, ammonium ions, N-oxides or prodrugs thereof; which are leukotriene A4 hydrolase inhibitors and therefore useful in treating inflammatory disorders. Pharmaceutical compositions comprising the compounds of the invention and methods of preparing the compounds of the invention are also disclosed.

摘要翻译： 本发明涉及式（I）化合物：其中r，q，R，R2，R3，R4，R5a，R5b，R5c，R6a，R6b，R6c，R7，R8和R9在本文中描述为单立体异构体 或作为立体异构体或其药学上可接受的盐，溶剂合物，包合物，多晶型物，铵离子，N-氧化物或前药的混合物; 其是白三烯A4水解酶抑制剂，因此可用于治疗炎症性疾病。 还公开了包含本发明化合物的药物组合物和制备本发明化合物的方法。

公开(公告)号：US20130217085A1

公开(公告)日：2013-08-22

申请号：US13812496

申请日：2011-01-13

申请人： He Huang ,  Qianqian Tong ,  Lujing Ren ,  Xiaojun Ji ,  Aihua Xiao ,  Ping Wei ,  Jiangying You ,  Liang Qu ,  Dongping Gong ,  Jiangyao Zhu

发明人： He Huang ,  Qianqian Tong ,  Lujing Ren ,  Xiaojun Ji ,  Aihua Xiao ,  Ping Wei ,  Jiangying You ,  Liang Qu ,  Dongping Gong ,  Jiangyao Zhu

IPC分类号： C12P7/64

CPC分类号： C12P7/6427

摘要： The present invention discloses a method of improving the fermentation yield of polyunsaturated fatty acids, in which Schizochytrium limacinum is used as production strain to produce polyunsaturated fatty acids (PUFA), and glycine betaine or trehalose is added to the fermentation medium. In the present invention, after Schizochytrium limacinum fermentation system is treated with exogenous glycine betaine, the yield of PUFA produced by fermentation with Schizochytrium limacinum can be greatly improved. The present invention significantly improves the yield of PUFA produced by microorganism, reduces the cost without harming the environment, and saves manpower and material resources by simple and effective regulation of fermentation, and thus the method is simple, convenient and cost-effective.

摘要翻译： 本发明公开了一种提高多不饱和脂肪酸的发酵产量的方法，其中使用裂殖壶菌作为生产菌株生产多不饱和脂肪酸（PUFA），将甘氨酸甜菜碱或海藻糖加入到发酵培养基中。 在本发明中，利用外源甘氨酸甜菜碱处理裂殖壶菌发酵系统后，可以大大提高利用裂殖壶菌发酵产生的PUFA产率。 本发明显着提高了微生物生产的PUFA的产量，降低了成本而不损害环境，通过简单有效的发酵调节节省了人力物力资源，方法简便，成本效益好。

公开(公告)号：US08461634B2

公开(公告)日：2013-06-11

申请号：US13087016

申请日：2011-04-14

申请人： Lie-Yong Yang ,  Sheng Chiang Hung ,  Kian-Long Lim ,  Ping-Wei Wang

发明人： Lie-Yong Yang ,  Sheng Chiang Hung ,  Kian-Long Lim ,  Ping-Wei Wang

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： H01L21/28123 ,  H01L21/76229 ,  H01L21/76232 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

摘要： An integrated circuit device and method for manufacturing the same are disclosed. An exemplary device includes a semiconductor substrate having a substrate surface; a trench isolation structure disposed in the semiconductor substrate, the trench isolation structure having a trench isolation structure surface that is substantially planar to the substrate surface; and a gate feature disposed over the semiconductor substrate, wherein the gate feature includes a portion that extends from the substrate surface to a depth in the trench isolation structure, the portion being defined by a trench isolation structure sidewall and a semiconductor substrate sidewall, such that the portion tapers from a first width at the substrate surface to a second width at the depth, the first width being greater than the second width.

摘要翻译： 公开了一种集成电路器件及其制造方法。 示例性器件包括具有衬底表面的半导体衬底; 设置在所述半导体衬底中的沟槽隔离结构，所述沟槽隔离结构具有与所述衬底表面基本平坦的沟槽隔离结构表面; 以及设置在所述半导体衬底上的栅极特征，其中所述栅极特征包括从所述衬底表面延伸到所述沟槽隔离结构中的深度的部分，所述部分由沟槽隔离结构侧壁和半导体衬底侧壁限定，使得 该部分从衬底表面的第一宽度到深度处的第二宽度逐渐变细，第一宽度大于第二宽度。

公开(公告)号：US20130016133A1

公开(公告)日：2013-01-17

申请号：US13467991

申请日：2012-05-09

申请人： Chia-Hsin Chen ,  Tsung-Ping Wei ,  Chiu-Yuan Lin

发明人： Chia-Hsin Chen ,  Tsung-Ping Wei ,  Chiu-Yuan Lin

IPC分类号： G09G3/36 ,  G09G5/10 ,  F21V13/04 ,  G02F1/13357 ,  F21V8/00 ,  F21V13/02

CPC分类号： G09G3/3426 ,  G02B6/0031 ,  G02B6/0073 ,  G02B6/0075 ,  G02B6/0083 ,  G09G3/3413 ,  G09G2320/0238

摘要： A backlight module and a liquid crystal display (LCD) device using the same are provided. The backlight module includes a light-guide plate and a light source module. The light-guide plate has a first side surface and a second side surface, wherein the second side surface is tangent with the first side surface. The light source module is disposed beside the first side surface and the second side surface of the light-guide plate, and a plurality of first light emitting diode (LED) units and a plurality of second LED units are respectively disposed at portions of the light source module that face the first side surface and the second side surface of the light-guide plate. Thereby, the backlight module has the advantages of high image contrast and low power consumption offered by a direct type backlight module and maintains the thickness of a side-edge backlight module.

摘要翻译： 提供了使用其的背光模块和液晶显示（LCD）装置。 背光模块包括导光板和光源模块。 导光板具有第一侧表面和第二侧表面，其中第二侧表面与第一侧表面相切。 光源模块设置在导光板的第一侧表面和第二侧表面旁边，并且多个第一发光二极管（LED）单元和多个第二LED单元分别设置在光的部分 源模块，其面对导光板的第一侧面和第二侧面。 因此，背光模块具有由直接型背光模块提供的高图像对比度和低功耗的优点，并且保持侧边背光模块的厚度。

公开(公告)号：US08193639B2

公开(公告)日：2012-06-05

申请号：US12750468

申请日：2010-03-30

申请人： Tzuan-Horng Liu ,  Shang-Yun Hou ,  Shin-Puu Jeng ,  Wei-Cheng Wu ,  Hsiu-Ping Wei ,  Chih-Hua Chen ,  Chen-Cheng Kuo ,  Chen-Shien Chen ,  Ming Hung Tseng

发明人： Tzuan-Horng Liu ,  Shang-Yun Hou ,  Shin-Puu Jeng ,  Wei-Cheng Wu ,  Hsiu-Ping Wei ,  Chih-Hua Chen ,  Chen-Cheng Kuo ,  Chen-Shien Chen ,  Ming Hung Tseng

IPC分类号： H01L23/485

CPC分类号： H01L23/585 ,  H01L23/552 ,  H01L23/562 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/11912 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2224/13655 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

摘要： An integrated circuit structure includes a semiconductor chip, a metal pad at a major surface of the semiconductor chip, and an under-bump metallurgy (UBM) over and contacting the metal pad. A metal bump is formed over and electrically connected to the UBM. A dummy pattern is formed at a same level, and formed of a same metallic material, as the metal pad.

摘要翻译： 集成电路结构包括半导体芯片，在半导体芯片的主表面处的金属焊盘和在凸块下金属（UBM）上并与金属焊盘接触的集成电路结构。 金属凸块形成在UBM上并与UBM电连接。 在同一水平上形成虚拟图案，并由与金属垫相同的金属材料形成。

公开(公告)号：US20120115308A1

公开(公告)日：2012-05-10

申请号：US13079306

申请日：2011-04-04

申请人： Chang-Huang HUA ,  Ping Wei CHEN ,  Kevin HUANG ,  Benny HO ,  Chen-Che CHIN

发明人： Chang-Huang HUA ,  Ping Wei CHEN ,  Kevin HUANG ,  Benny HO ,  Chen-Che CHIN

IPC分类号： H01L21/78

CPC分类号： H01L21/02076 ,  H01L21/78

摘要： A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by laser and separating the die units from each other; removing the laser cutting residues on the devices on the die units by wet etching; removing the protection layer and cleaning the devices on the die units. The selection of materials for the protection layer must consider the following factors: where (1) the materials for the protection layer must have relatively good properties for adhering and covering on the wafer; (2) and the materials for the protection layer must be corrosion-resistant to the acidic or basic solution for etching residues.

摘要翻译： 使用激光切割技术对半导体晶片进行切割的制造方法包括以下步骤：利用保护层覆盖晶片表面，该半导体晶片可以有效地防止半导体晶片上的器件受到激光切割之后的顺序步骤引起的蚀刻现象的影响。 通过激光切割晶片并将模具单元彼此分离; 通过湿蚀刻去除模具单元上的器件上的激光切割残留物; 去除保护层并清洁模具单元上的装置。 保护层的材料选择必须考虑以下因素：（1）保护层的材料必须具有相对较好的粘附和覆盖在晶片上的性能; （2），保护层的材料必须对腐蚀残留物的酸性或碱性溶液具有耐腐蚀性。

公开(公告)号：US08017473B2

公开(公告)日：2011-09-13

申请号：US12791656

申请日：2010-06-01

申请人： Chun-Yi Lee ,  Harry Chuang ,  Ping-Wei Wang ,  Kong-Beng Thei

发明人： Chun-Yi Lee ,  Harry Chuang ,  Ping-Wei Wang ,  Kong-Beng Thei

IPC分类号： H01L21/8238

CPC分类号： H01L27/0883 ,  G11C11/412 ,  H01L27/092 ,  H01L27/105 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848 ,  Y10S438/919

摘要： A semiconductor structure comprising an SRAM/inverter cell and a method for forming the same are provided, wherein the SRAM/inverter cell has an improved write margin. The SRAM/inverter cell includes a pull-up PMOS device comprising a gate dielectric over the semiconductor substrate, a gate electrode on the gate dielectric wherein the gate electrode comprises a p-type impurity and an n-type impurity, and a stressor formed in a source/drain region. The device drive current of the pull-up PMOS device is reduced due to the counter-doping of the gate electrode.

摘要翻译： 提供了包括SRAM /反相器单元的半导体结构及其形成方法，其中SRAM /反相器单元具有改善的写入裕度。 SRAM /反相器单元包括上拉PMOS器件，其包括半导体衬底上的栅极电介质，栅极电介质上的栅电极，其中栅电极包括p型杂质和n型杂质，以及形成在 源极/漏极区域。 上拉PMOS器件的器件驱动电流由于栅电极的反掺杂而降低。