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    Optical waveguide substrate, optical waveguide device, second harmonic generation device, and process of producing optical waveguide substrate
    4.
    发明授权
    Optical waveguide substrate, optical waveguide device, second harmonic generation device, and process of producing optical waveguide substrate 失效
    光波导基板，光波导装置，二次谐波发生装置以及光波导基板的制造工序

    公开(公告)号：US5991067A

    公开(公告)日：1999-11-23

    申请号：US922565

    申请日：1997-09-03

    申请人： Makoto Minakata ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    发明人： Makoto Minakata ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02F1/035 ,  G02F1/37 ,  G02F1/377

    CPC分类号： G02F1/035 ,  G02B6/122 ,  G02F1/3775 ,  G02B2006/12097

    摘要： An optical waveguide substrate having a substrate made of ferroelectric optical single crystal and a ridge portion projected from a main plane of the substrate, has a construction such that the ridge portion has a base portion made of ferroelectric optical single crystal and an optical waveguide formed on the base portion. The optical waveguide substrate is formed by forming at least one optical waveguide layer on a main plane of a substrate made of ferroelectric optical single crystal, and mechanically working main planes of the optical waveguide layer and the substrate to form a ridge portion projected from the main plane of the substrate. The optical waveguide substrate can reduce a light transmission loss, increase an extinction ratio, and improve an electric field applying efficiency.

    摘要翻译： 具有由铁电光学单晶构成的基板和从基板的主面突出的脊部的光波导基板具有这样的结构，使得该脊部具有由铁电光学单晶构成的基部和形成在 基部。 光波导基板通过在由铁电光学单晶制成的基板的主平面上形成至少一个光波导层，以及在光波导层和基板的机械加工主平面上形成从主体突出的脊部 基板的平面。 光波导基板可以减少光传输损耗，提高消光比，提高电场施加效率。

    Optical single crystal film process for producing the same and optical element comprising the same
    6.
    发明授权
    Optical single crystal film process for producing the same and optical element comprising the same 失效
    用于制造其的光学单晶膜工艺和包括该光学单晶膜的光学元件

    公开(公告)号：US06203728B1

    公开(公告)日：2001-03-20

    申请号：US09495578

    申请日：2000-02-01

    申请人： Tatsuo Kawaguchi ,  Minoru Imaeda

    发明人： Tatsuo Kawaguchi ,  Minoru Imaeda

    IPC分类号： G02B520

    CPC分类号： C30B29/30 ,  C30B19/02 ,  C30B33/02 ,  Y10S117/906 ,  Y10S117/918

    摘要： In producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method, this process contains the steps of: annealing the film at a predetermined temperature in an ozonic atmosphere; and temperature-increasing and -decreasing to and from the predetermined temperature, wherein at least one of temperature-increasing and -decreasing steps, the film is exposed to a substantially ozone-free atmosphere.

    摘要翻译： 在通过液相外延法在单晶衬底上由含有过渡金属的熔体制造光学单晶外延膜的过程中，包括以下步骤：在臭氧气氛中以预定温度对膜进行退火; 并且在预定温度下升温和降温，其中升温和降温步骤中的至少一个，使该膜暴露于基本上无臭氧的气氛中。

    Process and an apparatus for producing a composite oxide single crystal body
    7.
    发明授权
    Process and an apparatus for producing a composite oxide single crystal body 失效
    复合氧化物单晶体的制造方法和装置

    公开(公告)号：US6074477A

    公开(公告)日：2000-06-13

    申请号：US41479

    申请日：1998-03-12

    申请人： Minoru Imaeda ,  Tsuguo Fukuda ,  Kiyoshi Shimamura ,  Tatsuo Kawaguchi

    发明人： Minoru Imaeda ,  Tsuguo Fukuda ,  Kiyoshi Shimamura ,  Tatsuo Kawaguchi

    IPC分类号： G02B6/00 ,  C30B15/00 ,  C30B15/08 ,  C30B29/28 ,  C30B29/30 ,  G02B6/02 ,  G02F1/35 ,  G02F1/355 ,  H01S3/06 ,  H01S3/16 ,  C30B15/34

    CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/28 ,  C30B29/30 ,  C30B29/32 ,  G02B6/02 ,  Y10S117/91 ,  Y10T117/1032

    摘要： A process is disclosed for producing an integrated composite oxide single crystal body composed of a core portion made of an oxide single crystal and a clad portion integrated with the core portion and made of another oxide single crystal having a composition different from that of the oxide single crystal constituting the core portion, the process comprising the steps of: (1) preparing a first melt in a first crucible by melting a first material for a first oxide single crystal to constitute the core portion inside the first crucible, (2) preparing a second melt inside a second crucible by melting a second material for a second oxide single crystal to constitute the clad portion inside the second crucible, (3) contacting a seed crystal to the first and second melts, (4) pulling down the first melt through a pull-out opening of the first crucible, (5) pulling down the second melt through a pull-out opening of the second crucible and contacting the pulled-down second melt with a pulled-down portion of the first melt, and (6) integrally pulling down the first and second melts.

    摘要翻译： 公开了一种制造由由氧化物单晶构成的芯部和与芯部形成一体的包层部组成的集成复合氧化物单晶体的方法，该复合氧化物单晶体由具有不同于氧化物单体的组成的另一氧化物单晶制成 构成芯部的晶体，该方法包括以下步骤：（1）通过熔化第一氧化物单晶的第一材料在第一坩埚中制备第一熔体以构成第一坩埚内的芯部，（2）制备 通过熔化用于第二氧化物单晶的第二材料以在第二坩埚内部构成包层部分，在第二坩埚内熔化第二坩埚，（3）将晶种接触第一和第二熔体，（4）将第一熔体通过 第一坩埚的拉出开口，（5）通过第二坩埚的拉出口拉下第二熔体并将下拉的第二熔体与拉出的第二熔体接触， 第一熔体的下降部分，以及（6）一体地拉下第一和第二熔体。