摘要:
An exposure method using X-rays from a synchrotron radiation source includes determining a relationship between an X-ray intensity distribution and an exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.
摘要:
An X-ray transmitting window for use in X-ray lithography, for allowing transmission therethrough of X-rays from a vacuum ambience to a different ambience, includes an X-ray transmitting film, and a gasket material gas-tightly provided on at least one of opposite surfaces in a peripheral portion of the X-ray transmitting film. The gasket material has a Brinell hardness smaller than that of the X-ray transmitting film. The formed X-ray transmitting window is able to be sandwiched and fastened between a pair of flanges in a gas-tight manner.
摘要:
Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device. In another preferred from, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, a gas filter disposed in a portion of a light path of the EUV light and being filled with a predetermined gas, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of the reception of EUV light by the light receiving device.
摘要:
Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device. In another preferred from, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, a gas filter disposed in a portion of a light path of the EUV light and being filled with a predetermined gas, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of the reception of EUV light by the light receiving device.
摘要:
Disclosed is a device for determining an angle of incident light or a shift in incident light based on the output value of a detector. In a predetermined angle detection range, a beam of light incident on a detector for detecting the intensity of light incident thereon is restricted such that the amount of light continuously increases or decreases in accordance with the angle between an optical axis of the incident light and a referential axis of an exposure apparatus. Outside of the predetermined angle detection range, the amount of light is restricted depending on the direction in which the optical axis of the light is shifted from the angle detection range. The amount of light incident on the detector continuously increases or decreases in accordance with the angle between the optical axis of the incident light and the referential axis when the light is made incident within the angle detection range by means of the light restriction means. It is therefore possible to determine the angle of the incident light from the output value of the detector. When the light is made incident outside of the angle detection range, and since the amount of incident light is restricted in accordance with the direction in which the light is shifted, it is possible to determine the direction in which the light is shifted.
摘要:
A beam position detecting device wherein the intensity of a radiation beam from a synchrotron ring is measured on the basis of electric currents flowing through two wires, while accumulated electric current in the synchrotron ring is measured by using a current transformer. The beam position can be determined accurately on the basis of these measured values.
摘要:
A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.
摘要:
An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.
摘要:
A transfer magnification correcting method suited for use in scanning exposure by use of synchrotron radiation or the like. In proximity exposure according to the scanning exposure method by use of synchrotron radiation, the magnification in the scanning direction is corrected by relatively moving a wafer and a mask simultaneously with the scanning. Also, the overall correction of the magnification is performed by changing a proximity gap or adjusting the temperature of the mask or the wafer. As a result, it is possible to correct the transfer magnification separately in the vertical and horizontal directions.
摘要:
An exposure method for transferring a pattern of a mask onto a workpiece in a proximity exposure system, includes a first exposure step for exposing a predetermined portion of the workpiece, while maintaining a first spacing between the mask and the workpiece, and a second exposure step for exposing the predetermined portion of the workpiece, while maintaining a second spacing, different from the first spacing, between the mask and the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.