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公开(公告)号：US06324250B1
公开(公告)日：2001-11-27
申请号：US09425224
申请日：1999-10-22
IPC分类号： H01L2130
CPC分类号： G03F7/70425 , G03F1/22 , G03F1/50 , G03F7/2022
摘要： An exposure method for transferring a pattern of a mask onto a workpiece in a proximity exposure system, includes a first exposure step for exposing a predetermined portion of the workpiece, while maintaining a first spacing between the mask and the workpiece, and a second exposure step for exposing the predetermined portion of the workpiece, while maintaining a second spacing, different from the first spacing, between the mask and the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
摘要翻译： 一种用于在接近曝光系统中将掩模图案转印到工件上的曝光方法包括：第一曝光步骤，用于在保持掩模和工件之间的第一间隔的同时保持工件的预定部分，以及第二曝光步骤 用于在所述掩模和所述工件之间保持与所述第一间隔不同的第二间隔的情况下暴露所述工件的预定部分，其中在显影处理之前，重叠地执行所述第一和第二曝光步骤中的曝光。
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公开(公告)号：US06645707B2
公开(公告)日：2003-11-11
申请号：US09534334
申请日：2000-03-24
申请人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
发明人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
IPC分类号： G03C556
CPC分类号： G03F7/70466 , G03F7/2022
摘要： A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.
摘要翻译： 一种器件制造方法包括：第一曝光步骤，用于通过使用多个第一掩模来执行衬底的第一层的多次曝光;显影步骤，用于显影衬底的第一层;以及第二曝光步骤，在显影步骤之后执行 ，用于通过使用多个第二掩模来执行所述基板的第二层的多次曝光。 第一掩模中的至少一个的一部分具有与形成在至少一个第二掩模的部分中的图案相同的图案。
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公开(公告)号：US06272202B1
公开(公告)日：2001-08-07
申请号：US09426945
申请日：1999-10-26
申请人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
发明人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
IPC分类号： G21K500
CPC分类号： G03F7/70325 , G03F1/22 , G03F1/50 , G03F7/001 , G03F7/2022 , G03F7/7035 , G03F7/70466
摘要： An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.
摘要翻译： 一种用于将图案印刷到要曝光的工件上的曝光方法包括：第一曝光步骤，用于在工件上形成并且通过曝光形成在掩模上形成并且不具有周期性结构的第一吸收材料图案的转印图像，以及 第二曝光步骤，用于在工件上和通过曝光印刷由于在掩模上形成的具有周期性结构的第二吸收材料图案而通过菲涅耳衍射产生的衍射图案，衍射图案具有对应于1 / n的周期 其中n是不小于2的整数，并且其中同时执行第一和第二曝光步骤。
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公开(公告)号：US5159621A
公开(公告)日：1992-10-27
申请号：US739259
申请日：1991-08-01
申请人： Yutaka Watanabe , Shunichi Uzawa , Yasuaki Fukuda , Nobutoshi Mizusawa , Ryuichi Ebinuma , Mitsuaki Amemiya
发明人： Yutaka Watanabe , Shunichi Uzawa , Yasuaki Fukuda , Nobutoshi Mizusawa , Ryuichi Ebinuma , Mitsuaki Amemiya
CPC分类号： G21K5/04 , H01J2235/18
摘要： An X-ray transmitting window for use in X-ray lithography, for allowing transmission therethrough of X-rays from a vacuum ambience to a different ambience, includes an X-ray transmitting film, and a gasket material gas-tightly provided on at least one of opposite surfaces in a peripheral portion of the X-ray transmitting film. The gasket material has a Brinell hardness smaller than that of the X-ray transmitting film. The formed X-ray transmitting window is able to be sandwiched and fastened between a pair of flanges in a gas-tight manner.
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公开(公告)号：US06647087B2
公开(公告)日：2003-11-11
申请号：US09981080
申请日：2001-10-18
申请人： Mitsuaki Amemiya , Shunichi Uzawa
发明人： Mitsuaki Amemiya , Shunichi Uzawa
IPC分类号： G21K500
CPC分类号： G03F7/7035 , G03F1/70 , G03F7/001 , G03F7/2022 , G03F7/70466
摘要： An exposure method for exposing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
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公开(公告)号：US06327332B1
公开(公告)日：2001-12-04
申请号：US09425223
申请日：1999-10-22
申请人： Mitsuaki Amemiya , Shunichi Uzawa
发明人： Mitsuaki Amemiya , Shunichi Uzawa
IPC分类号： H01L2130
CPC分类号： G03F7/7035 , G03F1/70 , G03F7/001 , G03F7/2022 , G03F7/70466
摘要： An exposure method for posing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
摘要翻译： 一种用于在接近曝光系统中曝光工件的曝光方法包括：第一曝光步骤，用于通过曝光打印在工件的预定部分上的第一掩模图案的图像;以及第二曝光步骤，用于通过曝光打印， 在工件的预定部分上的与第一掩模图案不同的第二掩模图案的图像，其中在显影处理之前，重叠地执行第一和第二曝光步骤中的曝光。
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公开(公告)号：US5680428A
公开(公告)日：1997-10-21
申请号：US519755
申请日：1995-08-28
申请人： Mitsuaki Amemiya , Shunichi Uzawa
发明人： Mitsuaki Amemiya , Shunichi Uzawa
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30 , H01L21/683 , B32B31/04
CPC分类号： G03F7/70716 , G03F7/70783 , G03F7/70866 , G03F7/70875 , Y10T279/11
摘要： Disclosed are an object holding process and and an apparatus therefor in which a process strain of the object can be accurately compensated for. When the exposure operation is started, the bottom surface of the object is held by a holding unit. If the object has a strain, the process strain is calculated. Here, if the process strain is larger than a tolerance, the temperature of the object is set to an object setting temperature in a position other than an exposure position in order to contract or expand the object by a predetermined amount for a magnification correction. The bottom surface of the object is then held by the holding unit again, and the exposure of the object is performed in the exposure position.
摘要翻译： 公开了一种物体保持过程及其装置，其中可以精确地补偿物体的过程应变。 当曝光操作开始时，物体的底面由保持单元保持。 如果物体有应变，则计算过程应变。 这里，如果过程应变大于公差，则将物体的温度设定为除曝光位置以外的位置的物体设定温度，以使物体收缩或扩大预定量用于倍率校正。 然后，物体的底面再次被保持单元保持，并且在曝光位置进行物体的曝光。
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公开(公告)号：US06455203B1
公开(公告)日：2002-09-24
申请号：US09545464
申请日：2000-04-07
申请人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba
发明人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba
IPC分类号： G03F900
CPC分类号： G03F9/00 , G03F1/22 , G03F7/2022
摘要： A mask manufacturing method includes performing a multiple exposure process to a substrate so that a number of latent images are formed on the substrate, and processing the exposed substrate to produce actual mask patterns, wherein the multiple exposure process includes a first exposure step for forming a latent image of relatively-fine periodic patterns on the substrate by use of a first master mask having absorptive periodic patterns, and a second exposure step for forming a latent image of relatively-rough patterns on the substrate by use of a second master mask having absorptive patterns.
摘要翻译： 掩模制造方法包括对基板进行多次曝光处理，使得在基板上形成多个潜像，并处理曝光的基板以产生实际的掩模图案，其中多次曝光处理包括第一曝光步骤，用于形成 通过使用具有吸收性周期性图案的第一主掩模在基板上的相对精细的周期性图案的潜像，以及第二曝光步骤，用于通过使用具有吸收性的第二主掩模在基板上形成相对粗糙的图案的潜像 模式。
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公开(公告)号：US5138643A
公开(公告)日：1992-08-11
申请号：US591252
申请日：1990-10-01
申请人： Eiji Sakamoto , Ryuichi Ebinuma , Mitsuaki Amemiya , Shunichi Uzawa , Koji Uda
发明人： Eiji Sakamoto , Ryuichi Ebinuma , Mitsuaki Amemiya , Shunichi Uzawa , Koji Uda
IPC分类号： G03F7/20
CPC分类号： G03F7/70875 , G03F7/70008 , G03F7/70691 , G03F7/70858 , G03F7/70866
摘要： An exposure apparatus includes a chamber for placing an article in a predetermined ambience; a holding device for holding the article in the chamber; a fluid supplying device for supplying a temperature adjusting fluid into the holding device through a flow passageway; a detecting device for detecting leakage of the fluid from the flow passageway; and a flow rate controlling device for controlling the flow rate of the fluid to be supplied to the holding device on the basis of the detection by the detecting device.
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公开(公告)号：US5131022A
公开(公告)日：1992-07-14
申请号：US769493
申请日：1991-10-01
IPC分类号： G03F7/20
CPC分类号： G03F7/70558 , G03F7/2008 , G03F7/70875
摘要： An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.
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