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公开(公告)号：US20110124153A1
公开(公告)日：2011-05-26
申请号：US12948222
申请日：2010-11-17
IPC分类号： H01L21/20
CPC分类号： H01L29/78696 , G02F1/133528 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/133302 , G02F2001/133531 , G02F2201/121 , G02F2201/123 , G09G3/3677 , G09G2310/0286 , G09G2310/08 , H01L21/02107 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02672 , H01L21/324 , H01L21/477 , H01L21/67115 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
摘要翻译： 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。
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公开(公告)号：US20110008931A1
公开(公告)日：2011-01-13
申请号：US12832329
申请日：2010-07-08
申请人： Shunpei YAMAZAKI , Miyuki HOSOBA , Kosei NODA , Hiroki OHARA , Toshinari SASAKI , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Miyuki HOSOBA , Kosei NODA , Hiroki OHARA , Toshinari SASAKI , Junichiro SAKATA
IPC分类号： H01L21/36
CPC分类号： H01L29/66969 , H01L21/477 , H01L27/1225 , H01L29/7869
摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.
摘要翻译： 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的杂质如氧化物半导体层和与氧化物半导体层接触的薄膜 减少了
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公开(公告)号：US20110006301A1
公开(公告)日：2011-01-13
申请号：US12832333
申请日：2010-07-08
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译： 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如水分的杂质（脱水或脱氢热处理）的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。
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公开(公告)号：US20120220078A1
公开(公告)日：2012-08-30
申请号：US13467408
申请日：2012-05-09
IPC分类号： H01L21/363
CPC分类号： H01L29/78696 , G02F1/133528 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/133302 , G02F2001/133531 , G02F2201/121 , G02F2201/123 , G09G3/3677 , G09G2310/0286 , G09G2310/08 , H01L21/02107 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02672 , H01L21/324 , H01L21/477 , H01L21/67115 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
摘要翻译： 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。
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公开(公告)号：US20120319106A1
公开(公告)日：2012-12-20
申请号：US13596527
申请日：2012-08-28
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译： 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如湿度的杂质（脱水或脱氢热处理）的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。
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公开(公告)号：US20110031492A1
公开(公告)日：2011-02-10
申请号：US12848389
申请日：2010-08-02
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/3262 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/32 , H01L27/3248 , H01L29/45
摘要： The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.
摘要翻译： 半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。 第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层 并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。 第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。
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公开(公告)号：US20110024740A1
公开(公告)日：2011-02-03
申请号：US12846572
申请日：2010-07-29
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78696 , H01L27/1225 , H01L29/7869
摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.
摘要翻译： 提供具有能够充分降低寄生电容的结构的半导体器件。 此外，提高了驱动电路中薄膜晶体管的操作速度。 在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅极薄膜晶体管中，以与栅极薄膜晶体管不重叠的方式形成源电极层和漏电极层， 栅电极层。 因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。
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公开(公告)号：US20110210324A1
公开(公告)日：2011-09-01
申请号：US12869327
申请日：2010-08-26
申请人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
IPC分类号： H01L33/16
CPC分类号： H01L27/1225 , H01L27/322 , H01L27/3262
摘要： It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.
摘要翻译： 本发明的目的是提供一种在一个衬底上形成多种电路的发光器件，并且提供与多种电路的特性对应的多种薄膜晶体管。 将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管，并且将沟道蚀刻薄膜晶体管用于驱动器电路。 像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。
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公开(公告)号：US20110031497A1
公开(公告)日：2011-02-10
申请号：US12848397
申请日：2010-08-02
IPC分类号： H01L27/12 , H01L21/84 , H01L29/786
CPC分类号： H01L29/45 , H01L27/1214 , H01L27/1225 , H01L27/124
摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.
摘要翻译： 本发明的一个目的是增加半导体器件的开口率。 像素部分和驱动电路设置在一个基板上。 像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。 像素部分具有透光性。 此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。
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公开(公告)号：US20120126232A1
公开(公告)日：2012-05-24
申请号：US13363405
申请日：2012-02-01
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
摘要翻译： 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。
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