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公开(公告)号:US20110210324A1
公开(公告)日:2011-09-01
申请号:US12869327
申请日:2010-08-26
申请人: Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人: Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
IPC分类号: H01L33/16
CPC分类号: H01L27/1225 , H01L27/322 , H01L27/3262
摘要: It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.
摘要翻译: 本发明的目的是提供一种在一个衬底上形成多种电路的发光器件,并且提供与多种电路的特性对应的多种薄膜晶体管。 将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管,并且将沟道蚀刻薄膜晶体管用于驱动器电路。 像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。
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公开(公告)号:US20120126232A1
公开(公告)日:2012-05-24
申请号:US13363405
申请日:2012-02-01
申请人: Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
发明人: Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
IPC分类号: H01L29/786 , H01L21/336
CPC分类号: H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
摘要翻译: 本发明的目的是提供具有优异显示特性的显示装置,其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管,其中使用金属膜形成栅电极层,源电极层和漏电极层,并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层,源电极层和漏电极层的像素晶体管,并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成,因此可以制造具有较高开口率的显示装置。
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公开(公告)号:US20110058116A1
公开(公告)日:2011-03-10
申请号:US12871162
申请日:2010-08-30
申请人: Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
发明人: Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
CPC分类号: H01L27/1225
摘要: An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.
摘要翻译: 本发明提供一种有源矩阵液晶显示装置,其中在一个基板上形成多种电路,并且根据多种电路的特性设置多种薄膜晶体管。 包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。 使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。 此外,使用透光材料形成像素薄膜晶体管的主要部分,使得开口率增加。
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公开(公告)号:US20110057187A1
公开(公告)日:2011-03-10
申请号:US12871184
申请日:2010-08-30
申请人: Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人: Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
CPC分类号: H01L27/1251 , H01L27/1225 , H01L27/322 , H01L27/3262
摘要: An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译: 本发明的目的是提供一种在同一基板上形成多种电路的发光器件,并且根据多种电路的特性提供多种薄膜晶体管。 作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管,使用反向共面薄膜晶体管,其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管 , 分别。 在用于像素的薄膜晶体管和发光元件之间,设置滤色器层,以与与像素的薄膜晶体管电连接的发光元件重叠。
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公开(公告)号:US20110031496A1
公开(公告)日:2011-02-10
申请号:US12848375
申请日:2010-08-02
申请人: Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
发明人: Shunpei YAMAZAKI , Masayuki SAKAKURA , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Yoshiaki OIKAWA
CPC分类号: H01L27/3262 , H01L27/1225 , H01L27/322 , H01L27/3248 , H01L51/5278 , H01L2251/5323
摘要: A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译: 包括根据多种电路的特性,在一个基板上形成多种电路的多个薄膜晶体管的发光器件。 包括与源极和漏极层重叠的氧化物半导体层的倒共面薄膜晶体管用作像素的薄膜晶体管,通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管, 并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层,以与与像素的薄膜晶体管电连接的发光元件重叠。
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公开(公告)号:US20110210325A1
公开(公告)日:2011-09-01
申请号:US12871148
申请日:2010-08-30
申请人: Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人: Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
IPC分类号: H01L29/786 , H01L21/336
CPC分类号: H01L27/124 , G02F1/134309 , G02F1/13454 , G02F1/1368 , G02F2202/10 , H01L27/1225 , H01L27/1255
摘要: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
摘要翻译: 半导体器件包括驱动器电路部分,其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层,栅极绝缘层,源极电极层和漏极电极层,其各自具有设置在栅极绝缘层上的透光性,覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面,并且在栅电极层之间设置有栅极绝缘层,导电层设置在氧化物半导体层的一部分上,并且具有比源电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。
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公开(公告)号:US20110049510A1
公开(公告)日:2011-03-03
申请号:US12861190
申请日:2010-08-23
申请人: Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
发明人: Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
IPC分类号: H01L33/08 , H01L33/16 , H01L21/336
CPC分类号: H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
摘要翻译: 本发明的目的是提供具有优异显示特性的显示装置,其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管,其中使用金属膜形成栅电极层,源电极层和漏电极层,并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层,源电极层和漏电极层的像素晶体管,并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成,因此可以制造具有较高开口率的显示装置。
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公开(公告)号:US20110024740A1
公开(公告)日:2011-02-03
申请号:US12846572
申请日:2010-07-29
IPC分类号: H01L29/786 , H01L21/44
CPC分类号: H01L29/78696 , H01L27/1225 , H01L29/7869
摘要: A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.
摘要翻译: 提供具有能够充分降低寄生电容的结构的半导体器件。 此外,提高了驱动电路中薄膜晶体管的操作速度。 在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅极薄膜晶体管中,以与栅极薄膜晶体管不重叠的方式形成源电极层和漏电极层, 栅电极层。 因此,栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此,可以减小寄生电容。
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公开(公告)号:US20110032444A1
公开(公告)日:2011-02-10
申请号:US12848404
申请日:2010-08-02
申请人: Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA , Masashi TSUBUKU
发明人: Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA , Masashi TSUBUKU
CPC分类号: H01L27/1225 , G02F1/13306 , G02F1/133345 , G02F1/133528 , G02F1/1337 , G02F1/1339 , G02F1/13394 , G02F1/134336 , G02F1/13439 , G02F1/13454 , G02F1/136204 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/133357 , G02F2201/123 , G11C19/28 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L27/1288 , H01L29/247 , H01L29/78618 , H01L29/78648 , H01L29/78693 , H01L29/78696
摘要: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
摘要翻译: 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分(也称为像素部分)的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层。 在驱动电路部分的薄膜晶体管中,半导体层夹在栅电极层和导电层之间。 第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。
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公开(公告)号:US20120256179A1
公开(公告)日:2012-10-11
申请号:US13528009
申请日:2012-06-20
申请人: Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人: Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号: H01L29/786
CPC分类号: H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译: 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层,可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化,以及寄生通道的产生。 此外,可以减小氧化物半导体层与源极和漏极之间的接触电阻。
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