公开(公告)号：US20150349203A1

公开(公告)日：2015-12-03

申请号：US14726132

申请日：2015-05-29

Applicant: NICHIA CORPORATION

Inventor： Tomohiro SHIMOOKA ,  Masahiko SANO ,  Naoki AZUMA

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20

Abstract: A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.

Abstract translation: 氮化物半导体元件包括蓝宝石衬底，其包括：在蓝宝石衬底的c面中延伸的主表面和设置在主表面上的多个突起，所述多个突起包括至少一个具有细长形状的突起， 平面图; 以及设置在蓝宝石衬底的主表面上的氮化物半导体层。 所述至少一个突起具有在所述细长形状的纵向方向上延伸的外边缘，所述外边缘在相对于所述细长形状的a平面以-10°至+ 10°的范围内的角度定向的方向上延伸 蓝宝石衬底在平面图中。

公开(公告)号：US20150311388A1

公开(公告)日：2015-10-29

申请号：US14694792

申请日：2015-04-23

Applicant: NICHIA CORPORATION

Inventor： Tomohiro SHIMOOKA

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: A method of manufacturing a nitride semiconductor element includes dry etching a main surface of a sapphire substrate at a c-plane side thereof, using a mask provided on the main surface, to form a plurality of projections, each having a circular bottom surface; wet etching the sapphire substrate to form an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of the projection; and growing a semiconductor layer made of a nitride semiconductor on a dry etched surface and a wet etched surface of the sapphire substrate.

Abstract translation: 制造氮化物半导体元件的方法包括使用设置在主表面上的掩模在其c面侧对蓝宝石衬底的主表面进行干法蚀刻，以形成多个具有圆形底表面的突起; 湿法蚀刻蓝宝石衬底，以形成三角锥形状的每个突起的上部，同时保持凸起的圆形底面; 以及在干蚀刻表面和蓝宝石衬底的湿蚀刻表面上生长由氮化物半导体制成的半导体层。

公开(公告)号：US20180240934A1

公开(公告)日：2018-08-23

申请号：US15957692

申请日：2018-04-19

Applicant: NICHIA CORPORATION

Inventor： Hiroyuki INOUE ,  Tomohiro SHIMOOKA

IPC: H01L33/00 ,  H01L33/20

CPC classification number: H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: A light-emitting element includes: a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.

公开(公告)号：US20180047874A1

公开(公告)日：2018-02-15

申请号：US15714791

申请日：2017-09-25

Applicant: NICHIA CORPORATION

Inventor： Tomohiro SHIMOOKA ,  Masahiko SANO ,  Naoki AZUMA

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/20 ,  H01L33/12 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20

Abstract: A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.

公开(公告)号：US20170062658A1

公开(公告)日：2017-03-02

申请号：US15349584

申请日：2016-11-11

Applicant: NICHIA CORPORATION

Inventor： Tomohiro SHIMOOKA

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: A method of manufacturing a nitride semiconductor element includes dry etching a main surface of a sapphire substrate at a c-plane side thereof, using a mask provided on the main surface, to form a plurality of projections, each having a circular bottom surface; wet etching the sapphire substrate to form an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of the projection; and growing a semiconductor layer made of a nitride semiconductor on a dry etched surface and a wet etched surface of the sapphire substrate.

Abstract translation: 制造氮化物半导体元件的方法包括使用设置在主表面上的掩模在其c面侧对蓝宝石衬底的主表面进行干法蚀刻，以形成多个具有圆形底表面的突起; 湿法蚀刻蓝宝石衬底，以形成三角锥形状的每个突起的上部，同时保持凸起的圆形底面; 以及在干蚀刻表面和蓝宝石衬底的湿蚀刻表面上生长由氮化物半导体制成的半导体层。