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    CIGS TYPE COMPOUND SOLAR CELL
    2.
    发明申请
    CIGS TYPE COMPOUND SOLAR CELL 有权
    CIGS型复合太阳能电池

    公开(公告)号：US20160005893A1

    公开(公告)日：2016-01-07

    申请号：US14766167

    申请日：2014-01-24

    Applicant: NITTO DENKO CORPORATION

    Inventor： Seiki Teraji ,  Kazunori Kawamura ,  Yusuke Yamamoto ,  Hiroto Nishii ,  Taichi Watanabe

    IPC: H01L31/0392 ,  H01L31/0749

    CPC classification number: H01L31/03923 ,  C23C14/06 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A CIGS type compound solar cell excellent in both productivity and conversion efficiency is provided. The CIGS type solar cell includes a CIGS light absorbing layer, a buffer layer and a transparent electrode layer provided in this order on a substrate. The buffer layer is made of a mixed crystal compound containing ZnO, MgO and ZnS being present at specific ranges respectively.

    Abstract translation: 提供了优异的生产率和转换效率的CIGS型复合太阳能电池。 CIGS型太阳能电池包括依次设置在基板上的CIGS光吸收层，缓冲层和透明电极层。 缓冲层由分别以特定范围存在的ZnO，MgO和ZnS的混合晶体化合物制成。

    CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD
    3.
    发明申请
    CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD 审中-公开
    CIGS膜生产方法和CIGS太阳能电池生产方法使用CIGS膜生产方法

    公开(公告)号：US20150380596A1

    公开(公告)日：2015-12-31

    申请号：US14766565

    申请日：2014-01-24

    Applicant: NITTO DENKO CORPORATION

    Inventor： Hiroto Nishii ,  Taichi Watanabe ,  Yusuke Yamamoto ,  Seiki Teraji ,  Kazunori Kawamura

    IPC: H01L31/18 ,  H01L31/0392

    CPC classification number: H01L31/18 ,  C23C14/0623 ,  H01L21/02568 ,  H01L21/02667 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

    Abstract: The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium, in this order in a solid phase over a substrate; and a heating step of heating the resulting stack of the layer (A) and the layer (B) to melt the layer (B) into a liquid phase, whereby copper is diffused from the layer (B) into the layer (A) to cause crystal growth; wherein the layer (A) is formed by repeatedly stacking a gallium selenide film (Y) and an indium selenide film (X) in this order and reducing a thickness ratio (Y/X) between the gallium selenide film (Y) and the indium selenide film (X) as the stacking is repeated.

    Abstract translation: CIGS膜制造方法包括：在基板上以固相依次层叠含有铟，镓和硒的层（A）和含有铜和硒的层（B）的叠层工序; 以及加热步骤，将所得到的层（A）和层（B）的叠层加热，使层（B）熔融成液相，由此将铜从层（B）扩散到层（A）至 引起晶体生长; 其中层（A）通过依次重复堆叠硒化镓膜（Y）和硒化铟膜（X）而形成，并且减小硒化镓膜（Y）和铟之间的厚度比（Y / X） 硒化膜（X）作为层叠重复。

    CIGS FILM, AND CIGS SOLAR CELL EMPLOYING THE SAME
    4.
    发明申请
    CIGS FILM, AND CIGS SOLAR CELL EMPLOYING THE SAME 有权
    CIGS薄膜和CIGS太阳能电池

    公开(公告)号：US20150380589A1

    公开(公告)日：2015-12-31

    申请号：US14766552

    申请日：2014-01-24

    Applicant: NITTO DENKO CORPORATION

    Inventor： Seiki Teraji ,  Hiroto Nishii ,  Taichi Watanabe ,  Yusuke Yamamoto ,  Kazunori Kawamura ,  Takashi Minemoto ,  Jakapan Chantana

    IPC: H01L31/065 ,  H01L31/032

    CPC classification number: H01L31/0322 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543

    Abstract: The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

    Abstract translation: 本发明提供了一种基本上不含氧化前表面的CIGS膜和采用CIGS膜的CIGS太阳能电池，并且基本上没有减少和变化的转换效率。 用作CIGS太阳能电池的光吸收层的CIGS膜包括：具有Ga /（In + Ga）比率的第一区域沿着其厚度朝着预定的第一厚度位置逐渐地从 CIGS电影; 具有Ga /（In + Ga）比率的第二区域沿其厚度从第一区域朝向预定的第二厚度位置逐渐增加; 以及设置在所述第二区域上并且其Ga /（In + Ga）比沿其厚度逐渐减小到所述CIGS膜的前表面的第三区域。

    COMPOUND SOLAR CELL AND PRODUCTION METHOD THEREFOR
    5.
    发明申请
    COMPOUND SOLAR CELL AND PRODUCTION METHOD THEREFOR 审中-公开
    化合物太阳能电池及其生产方法

    公开(公告)号：US20150303329A1

    公开(公告)日：2015-10-22

    申请号：US14421580

    申请日：2013-06-18

    Applicant: NITTO DENKO CORPORATION

    Inventor： Seiki Teraji ,  Kazunori Kawamura ,  Hiroto Nishii ,  Taichi Watanabe ,  Yusuke Yamamoto

    IPC: H01L31/032 ,  H01L31/18 ,  H01L31/0749

    CPC classification number: H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A compound solar cell having a higher conversion efficiency and a method for producing the compound solar cell at lower costs are provided. The compound solar cell includes a CIGS light absorbing layer, a buffer layer and a front side electrode layer provided on a substrate. An interface layer made of a mixed crystal compound having a composition represented by the following general formula is provided between the CIGS light absorbing layer and the buffer layer: Zn(Ox,S1-x) . . . (1), wherein X is 0.9

    Abstract translation: 提供了具有较高转换效率的复合太阳能电池以及以较低成本制造复合太阳能电池的方法。 复合太阳能电池包括CIGS光吸收层，缓冲层和设置在基板上的前侧电极层。 在CIGS光吸收层和缓冲层之间设置由具有以下通式表示的组成的混合晶体化合物的界面层：Zn（Ox，S1-x）。 。 。 （1），其中X为0.9

    CIGS COMPOUND SOLAR CELL
    6.
    发明申请
    CIGS COMPOUND SOLAR CELL 有权
    CIGS化合物太阳能电池

    公开(公告)号：US20150027537A1

    公开(公告)日：2015-01-29

    申请号：US14376761

    申请日：2013-02-25

    Applicant: NITTO DENKO CORPORATION

    Inventor： Seiki Teraji ,  Kazunori Kawamura ,  Hiroto Nishii ,  Taichi Watanabe

    IPC: H01L31/0216 ,  H01L31/032 ,  H01L31/0224

    CPC classification number: H01L31/02167 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/0328 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

    Abstract: In order to provide a CIGS compound solar cell with a high conversion efficiency, a CIGS compound solar cell including a rear electrode layer, a CIGS light absorbing layer, a buffer layer, and a transparent electrode layer in this order over a substrate is configured such that the buffer layer comprises a mixed crystal of a Group IIa metal and zinc oxide, and characteristics of the mixed crystal as shown by X-ray diffraction satisfy the following formula (1): 0.5≦A/(A+B+C)

    Abstract translation: 为了提供具有高转换效率的CIGS复合太阳能电池，在衬底上依次包括后电极层，CIGS光吸收层，缓冲层和透明电极层的CIGS复合太阳能电池被配置为 缓冲层包含IIa族金属和氧化锌的混合晶体，X射线衍射所示的混合晶体的特性满足下式（1）：0.5＆nlE; A /（A + B + C） （1）（A，B，C不为0）A：平面处的峰强度（002）B：平面处的峰强度（100）C：平面处的峰强度（101）。

    CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD
    10.
    发明申请
    CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD 审中-公开
    CIGS膜生产方法和CIGS太阳能电池生产方法使用CIGS膜生产方法

    公开(公告)号：US20150357492A1

    公开(公告)日：2015-12-10

    申请号：US14762940

    申请日：2014-01-24

    Applicant: NITTO DENKO CORPORATION

    Inventor： Seiki Teraji ,  Taichi Watanabe ,  Hiroto Nishii ,  Yusuke Yamamoto ,  Kazunori Kawamura ,  Takashi Minemoto ,  Jakapan Chantana

    IPC: H01L31/0392 ,  H01L31/18

    CPC classification number: H01L31/03923 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film.

    Abstract translation: 能够抑制CIGS膜的表面的氧化的CIGS膜制造方法和使用CIGS膜制造方法的CIGS太阳能电池的制造方法包括以下步骤：形成Ga /（In + Ga）比率的第一区域 随着第一区域的厚度从CIGS膜的背面增加到预定的第一厚度位置，逐渐减小; 随着第二区域的厚度从第一区域增加到预定的第二厚度位置，形成具有Ga /（In + Ga）比率的第二区域逐渐增加; 并且通过气相沉积Se和In在第二区域上形成第三区域，具有Ga /（In + Ga）比率的第三区域朝向CIGS膜的前表面逐渐减小。

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