公开(公告)号：US06792367B2

公开(公告)日：2004-09-14

申请号：US10115815

申请日：2002-03-28

申请人： Naoki Hosoya ,  Yuuji Takagi ,  Hisae Shibuya ,  Kenji Obara

发明人： Naoki Hosoya ,  Yuuji Takagi ,  Hisae Shibuya ,  Kenji Obara

IPC分类号： G06F1900

CPC分类号： H01L22/20 ,  G06T7/0002 ,  G06T7/0004 ,  G06T7/41 ,  G06T2200/24 ,  G06T2207/30148

摘要： In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.

摘要翻译： 在晶片检查和采样系统中，晶片缺陷被检测并存储在数据存储器中作为缺陷数据。 还提供了信息，代表晶片上的缺陷簇。 进行基于统计学的缺陷采样，以获得一组采样缺陷。 随后对采样缺陷的详细检查和分析会产生额外的数据，有助于了解过程错误。

公开(公告)号：US06792366B2

公开(公告)日：2004-09-14

申请号：US10015276

申请日：2001-12-11

申请人： Naoki Hosoya ,  Yuuji Takagi ,  Hisae Shibuya ,  Kenji Obara

发明人： Naoki Hosoya ,  Yuuji Takagi ,  Hisae Shibuya ,  Kenji Obara

IPC分类号： H01L2100

CPC分类号： H01L22/20 ,  G06T7/0002 ,  G06T7/0004 ,  G06T7/41 ,  G06T2200/24 ,  G06T2207/30148

摘要： In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.

公开(公告)号：US06870169B2

公开(公告)日：2005-03-22

申请号：US10735575

申请日：2003-12-11

申请人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya ,  Naoki Hosoya

发明人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya ,  Naoki Hosoya

IPC分类号： G01N23/225 ,  G01Q30/02 ,  G01R31/26 ,  G06T7/00 ,  H01J37/147 ,  H01J37/252 ,  H01L21/66

CPC分类号： G06T7/0004 ,  G06T2207/30148

摘要： In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.

摘要翻译： 为了能够检测匹配缺陷位置的电子束的照射位置并且以高精度和高效率进行缺陷的组成分析，在本发明中，当选择组成分析目标缺陷并且 电子束被设置用于EDX分析，使用电子束在与包括缺陷的目标芯片附近的芯片上的该缺陷的位置相对应的缺陷对应位置处采集低分辨率的低分辨率参考图像，并且 接下来在目标芯片的缺陷位置获取相同低分辨率的低分辨率缺陷图像。 然后，通过比较这些低分辨率图像，获取缺陷位置，电子束被倾斜并照射在该缺陷位置以获得缺陷的组成谱。

公开(公告)号：US20060078188A1

公开(公告)日：2006-04-13

申请号：US11190829

申请日：2005-07-28

申请人： Masaki Kurihara ,  Hisae Shibuya ,  Toshifumi Honda ,  Naoki Hosoya ,  Atsushi Miyamoto

发明人： Masaki Kurihara ,  Hisae Shibuya ,  Toshifumi Honda ,  Naoki Hosoya ,  Atsushi Miyamoto

IPC分类号： G06K9/00 ,  G06K9/62

CPC分类号： G06T7/0004 ,  G06T2207/30148

摘要： In an automatic defect classifying method, defects not reviewed are assigned with defect classes having the same definitions as those of reviewed defects in order to effectively use information on defects not reviewed, the defects not reviewed occupying most of defects on a wafer. Defects not reviewed are assigned defect classes having the same definitions, by using defect data of defects detected with an inspection equipment and defect classes of already reviewed defects given by ADC of a review equipment. Since all defects are assigned the defect classes having the same definitions, more detailed analysis is possible in estimating the generation reasons of defects.

摘要翻译： 在自动缺陷分类方法中，未评估的缺陷被分配具有与经检查的缺陷相同的定义的缺陷类，以便有效地使用未被评估的缺陷的信息，未被评估的缺陷占据了晶片上的大多数缺陷。 未审查的缺陷被分配具有相同定义的缺陷类别，通过使用检查设备检测到的缺陷缺陷数据和审查设备的ADC给出的已经评估的缺陷的缺陷类别。 由于所有缺陷都分配有相同定义的缺陷类别，因此可以在估计缺陷的生成原因时进行更详细的分析。

公开(公告)号：US06741941B2

公开(公告)日：2004-05-25

申请号：US10449528

申请日：2003-05-29

申请人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya

发明人： Kenji Obara ,  Yuji Takagi ,  Hisae Shibuya

IPC分类号： G06F1900

CPC分类号： H01L21/67253

摘要： To efficiently extract identification of apparatuses causing problems in a thin-film device manufacturing process, candidates for the problem-generating manufacturing apparatus are extracted by evaluating data obtained in relation to produced inspections and data indicating the states of the manufacturing apparatus, with respect to products that enable efficient extraction of problem-generated apparatuses in a thin-film devise manufacturing process. This facilitates inferring the identification of the problem-generating apparatus.

摘要翻译： 为了有效地提取在薄膜器件制造过程中导致问题的装置的识别，通过对与产生的检查获得的数据和指示制造装置的状态的数据相关的产品，提取问题产生制造装置的候选 这能够在薄膜设计制造过程中有效地提取问题产生的装置。 这有助于推断问题产生装置的识别。

公开(公告)号：US08630962B2

公开(公告)日：2014-01-14

申请号：US13057831

申请日：2009-05-29

申请人： Shunji Maeda ,  Hisae Shibuya

发明人： Shunji Maeda ,  Hisae Shibuya

IPC分类号： G06F15/18

CPC分类号： G05B23/0254 ,  G06K9/00536 ,  G06K9/6252 ,  G06K9/6272 ,  G06K9/6284

摘要： Provided are a method which permits complete training data and data with added errors, and enables the early and accurate discovery of errors in facilities such as a plant, and a system thereof. To achieve the objectives, (1) the behavior of temporal data is observed over time, and the trace is divided into clusters; (2) the divided cluster groups are modeled in sub spaces, and the discrepancy values are calculated as errors candidates; (3) the training data are used (compare, reference, etc.) for reference to determine the state transitions caused by the changes over time, the environmental changes, the maintenance (parts replacement), and the operation states; and (4) the modeling is a sub space method such as regression analysis or projection distance method of every N data removing N data items, (N=0, 1, 2, . . . ) (for example, when N=1, one error data item is considered to have been added, this data is removed, then the modeling is performed), or a local sub space method. Linear fitting in regression analysis is equivalent to the lowest order regression analysis.

摘要翻译： 提供了一种允许完整的训练数据和具有附加错误的数据的方法，并且能够及早准确地发现诸如工厂及其系统之类的设施中的错误。 为了实现目标，（1）随时间观察时间数据的行为，并将踪迹分为簇; （2）划分的群集组在子空间中建模，差异值计算为错误候选; （3）使用训练数据（比较，参考等）作为参考，确定随时间变化，环境变化，维护（部件更换）和操作状态引起的状态转换; （4）建模是N次数据去除N个数据项（N = 0,1,2，...）的回归分析或投影距离法的子空间法（例如，当N = 1时， 一个错误数据项被认为已被添加，该数据被删除，然后进行建模）或本地子空间方法。 回归分析中的线性拟合等价于最低阶回归分析。

公开(公告)号：US08310666B2

公开(公告)日：2012-11-13

申请号：US13116466

申请日：2011-05-26

申请人： Akira Hamamatsu ,  Shunji Maeda ,  Hisae Shibuya

发明人： Akira Hamamatsu ,  Shunji Maeda ,  Hisae Shibuya

IPC分类号： G01N21/88 ,  G01B11/00

CPC分类号： G01N21/956

摘要： When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.

摘要翻译： 当通过现有技术的缺陷检查装置获得越来越小型化的图案的缺陷的尺寸时，不方便地给出不同于SEM的相同缺陷的测量值的值。 因此，需要精确地计算由缺陷检查装置检测到的缺陷的尺寸值，以近似于通过SEM测量的值。 为此，由缺陷检查装置检测到的缺陷的尺寸根据缺陷的特征量或类型进行修正，从而可以精确地计算缺陷尺寸。

公开(公告)号：US20120133927A1

公开(公告)日：2012-05-31

申请号：US13368585

申请日：2012-02-08

申请人： Akira HAMAMATSU ,  Hisae Shibuya ,  Shunji Maeda

发明人： Akira HAMAMATSU ,  Hisae Shibuya ,  Shunji Maeda

IPC分类号： G01N21/55

CPC分类号： G01N21/9501 ,  G01N2021/8822

摘要： A defect inspection apparatus for inspecting defects on an inspecting object includes an illuminator which irradiates a beam of light on the inspecting object, a photo-detector which detects rays of light from the inspecting object due to the irradiation of the light beam by the illuminator, a defect detector which detects a defect by processing a signal obtained through detection by the photo-detector, a characteristic quantity calculator which calculates a characteristic quantity related to a size of the defect, and a defect size calculator which uses a relation between size and characteristic quantity which is calculated by an optical simulation and calculates a size of the detected defect.

摘要翻译： 用于检查检查对象的缺陷的缺陷检查装置包括：在检查对象物上照射光束的照明器，由于照射器照射光束而检测来自被检查物体的光的光检测器， 缺陷检测器，其通过处理通过光检测器的检测获得的信号来检测缺陷;计算与缺陷的尺寸相关的特征量的特征量计算器;以及使用尺寸和特性之间的关系的缺陷尺寸计算器 通过光学模拟计算的量，并计算检测到的缺陷的尺寸。

公开(公告)号：US08144337B2

公开(公告)日：2012-03-27

申请号：US12470505

申请日：2009-05-22

申请人： Akira Hamamatsu ,  Yoshimasa Oshima ,  Shunji Maeda ,  Hisae Shibuya ,  Yuta Urano ,  Toshiyuki Nakao ,  Shigenobu Maruyama

发明人： Akira Hamamatsu ,  Yoshimasa Oshima ,  Shunji Maeda ,  Hisae Shibuya ,  Yuta Urano ,  Toshiyuki Nakao ,  Shigenobu Maruyama

IPC分类号： G01B11/30

CPC分类号： G01B11/303 ,  G01N21/47 ,  G01N21/94 ,  G01N21/9501

摘要： To inspect a substrate such as a semiconductor substrate for surface roughness at high precision.The surface roughness of the substrate is measured in each frequency band of the surface roughness by applying a light to the substrate surface and detecting a scattered light or reflected light at a plurality of azimuth or elevation angles.

摘要翻译： 以高精度检查用于表面粗糙度的半导体基板等基板。 通过向基板表面施加光并以多个方位角或仰角检测散射光或反射光，测量表面粗糙度的每个频带中的基板的表面粗糙度。

公开(公告)号：US08086422B2

公开(公告)日：2011-12-27

申请号：US12341657

申请日：2008-12-22

申请人： Hisae Shibuya ,  Yuji Takagi

发明人： Hisae Shibuya ,  Yuji Takagi

IPC分类号： G06F11/00

CPC分类号： G01N21/956 ,  G06T7/0006 ,  G06T7/001 ,  G06T2207/30148

摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

摘要翻译： 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态，将其分类为分布特征类别，或重复缺陷，拥塞缺陷，线性分布缺陷，环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中，基于由检查装置检测出的缺陷数据来分析缺陷分布状态，从而指定装置或处理中的缺陷的原因。