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公开(公告)号：US06870169B2
公开(公告)日：2005-03-22
申请号：US10735575
申请日：2003-12-11
申请人： Kenji Obara , Yuji Takagi , Hisae Shibuya , Naoki Hosoya
发明人： Kenji Obara , Yuji Takagi , Hisae Shibuya , Naoki Hosoya
IPC分类号： G01N23/225 , G01Q30/02 , G01R31/26 , G06T7/00 , H01J37/147 , H01J37/252 , H01L21/66
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.
摘要翻译： 为了能够检测匹配缺陷位置的电子束的照射位置并且以高精度和高效率进行缺陷的组成分析，在本发明中，当选择组成分析目标缺陷并且 电子束被设置用于EDX分析，使用电子束在与包括缺陷的目标芯片附近的芯片上的该缺陷的位置相对应的缺陷对应位置处采集低分辨率的低分辨率参考图像，并且 接下来在目标芯片的缺陷位置获取相同低分辨率的低分辨率缺陷图像。 然后，通过比较这些低分辨率图像，获取缺陷位置，电子束被倾斜并照射在该缺陷位置以获得缺陷的组成谱。
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公开(公告)号：US06792367B2
公开(公告)日：2004-09-14
申请号：US10115815
申请日：2002-03-28
申请人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
发明人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
IPC分类号： G06F1900
CPC分类号： H01L22/20 , G06T7/0002 , G06T7/0004 , G06T7/41 , G06T2200/24 , G06T2207/30148
摘要： In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.
摘要翻译： 在晶片检查和采样系统中，晶片缺陷被检测并存储在数据存储器中作为缺陷数据。 还提供了信息，代表晶片上的缺陷簇。 进行基于统计学的缺陷采样，以获得一组采样缺陷。 随后对采样缺陷的详细检查和分析会产生额外的数据，有助于了解过程错误。
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公开(公告)号：US06792366B2
公开(公告)日：2004-09-14
申请号：US10015276
申请日：2001-12-11
申请人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
发明人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
IPC分类号： H01L2100
CPC分类号： H01L22/20 , G06T7/0002 , G06T7/0004 , G06T7/41 , G06T2200/24 , G06T2207/30148
摘要： In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.
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公开(公告)号：US06741941B2
公开(公告)日：2004-05-25
申请号：US10449528
申请日：2003-05-29
申请人： Kenji Obara , Yuji Takagi , Hisae Shibuya
发明人： Kenji Obara , Yuji Takagi , Hisae Shibuya
IPC分类号： G06F1900
CPC分类号： H01L21/67253
摘要： To efficiently extract identification of apparatuses causing problems in a thin-film device manufacturing process, candidates for the problem-generating manufacturing apparatus are extracted by evaluating data obtained in relation to produced inspections and data indicating the states of the manufacturing apparatus, with respect to products that enable efficient extraction of problem-generated apparatuses in a thin-film devise manufacturing process. This facilitates inferring the identification of the problem-generating apparatus.
摘要翻译： 为了有效地提取在薄膜器件制造过程中导致问题的装置的识别，通过对与产生的检查获得的数据和指示制造装置的状态的数据相关的产品，提取问题产生制造装置的候选 这能够在薄膜设计制造过程中有效地提取问题产生的装置。 这有助于推断问题产生装置的识别。
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公开(公告)号：US20060078188A1
公开(公告)日：2006-04-13
申请号：US11190829
申请日：2005-07-28
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In an automatic defect classifying method, defects not reviewed are assigned with defect classes having the same definitions as those of reviewed defects in order to effectively use information on defects not reviewed, the defects not reviewed occupying most of defects on a wafer. Defects not reviewed are assigned defect classes having the same definitions, by using defect data of defects detected with an inspection equipment and defect classes of already reviewed defects given by ADC of a review equipment. Since all defects are assigned the defect classes having the same definitions, more detailed analysis is possible in estimating the generation reasons of defects.
摘要翻译： 在自动缺陷分类方法中，未评估的缺陷被分配具有与经检查的缺陷相同的定义的缺陷类，以便有效地使用未被评估的缺陷的信息，未被评估的缺陷占据了晶片上的大多数缺陷。 未审查的缺陷被分配具有相同定义的缺陷类别，通过使用检查设备检测到的缺陷缺陷数据和审查设备的ADC给出的已经评估的缺陷的缺陷类别。 由于所有缺陷都分配有相同定义的缺陷类别，因此可以在估计缺陷的生成原因时进行更详细的分析。
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6.发明授权公开(公告)号：US08086422B2
公开(公告)日：2011-12-27
申请号：US12341657
申请日：2008-12-22
申请人： Hisae Shibuya , Yuji Takagi
发明人： Hisae Shibuya , Yuji Takagi
IPC分类号： G06F11/00
CPC分类号： G01N21/956 , G06T7/0006 , G06T7/001 , G06T2207/30148
摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.
摘要翻译： 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态，将其分类为分布特征类别，或重复缺陷，拥塞缺陷，线性分布缺陷，环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中，基于由检查装置检测出的缺陷数据来分析缺陷分布状态，从而指定装置或处理中的缺陷的原因。
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公开(公告)号：US20110164809A1
公开(公告)日：2011-07-07
申请号：US13049943
申请日：2011-03-17
申请人： Hisae Shibuya , Akira Hamamatsu , Yuji Takagi
发明人： Hisae Shibuya , Akira Hamamatsu , Yuji Takagi
IPC分类号： G06K9/00
CPC分类号： G06K9/6221 , G01N21/9501 , G01N21/95607 , G01N2021/8854 , G01N2021/95676
摘要： With the objective of achieving defect kind training in a short period of time to teach classification conditions of defects detected as a result of inspecting a thin film device, according to one aspect of the present invention, there is provided a visual inspection method, and an apparatus therefor, comprising the steps of: detecting defects based on inspection images acquired by optical or electronic defect detection means, and at the same time calculating features of the defects; and classifying the defects according to classification conditions set beforehand, wherein said classification condition setting step further includes the steps of: collecting defect features over a large number of defects acquired beforehand from the defect detection step; sampling defects based on the distribution of the collected defect features over the large number of defects; and setting defect classification conditions based on the result of reviewing the sampled defects.
摘要翻译： 为了在短时间内实现缺陷种类训练，目的在于教导检查薄膜装置的检测缺陷的分类条件，根据本发明的一个方面，提供一种目视检查方法， 其装置包括以下步骤：基于由光学或电子缺陷检测装置获取的检查图像检测缺陷，同时计算缺陷的特征; 并根据预先设定的分类条件对缺陷进行分类，其中所述分类条件设置步骤还包括以下步骤：从缺陷检测步骤预先获取的大量缺陷中收集缺陷特征; 基于收集的缺陷特征分布在大量缺陷上的采样缺陷; 并根据检查采样缺陷的结果设置缺陷分类条件。
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公开(公告)号：US20060239536A1
公开(公告)日：2006-10-26
申请号：US11472399
申请日：2006-06-22
申请人： Hisae Shibuya , Yuji Takagi
发明人： Hisae Shibuya , Yuji Takagi
CPC分类号： G01N21/956 , G01N21/9501 , G06T7/0006 , G06T7/001 , G06T2207/30148
摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.
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9.发明申请公开(公告)号：US20050168731A1
公开(公告)日：2005-08-04
申请号：US11095614
申请日：2005-04-01
申请人： Hisae Shibuya , Yuji Takagi
发明人： Hisae Shibuya , Yuji Takagi
CPC分类号： G01N21/956 , G06T7/0006 , G06T7/001 , G06T2207/30148
摘要： The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.
摘要翻译： 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态，将其分类为分布特征类别，或重复缺陷，拥塞缺陷，线性分布缺陷，环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中，基于由检查装置检测出的缺陷数据来分析缺陷分布状态，从而指定装置或处理中的缺陷的原因。
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公开(公告)号：US07720275B2
公开(公告)日：2010-05-18
申请号：US11319271
申请日：2005-12-29
申请人： Hisae Shibuya , Akira Hamamatsu , Yuji Takagi
发明人： Hisae Shibuya , Akira Hamamatsu , Yuji Takagi
CPC分类号： G06K9/6221 , G01N21/9501 , G01N21/95607 , G01N2021/8854 , G01N2021/95676
摘要： With the objective of achieving defect kind training in a short period of time to teach classification conditions of defects detected as a result of inspecting a thin film device, according to one aspect of the present invention, there is provided a visual inspection method, and an apparatus therefore, comprising the steps of: detecting defects based on inspection images acquired by optical or electronic defect detection means, and at the same time calculating features of the defects; and classifying the defects according to classification conditions set beforehand, wherein said classification condition setting step further includes the steps of: collecting defect features over a large number of defects acquired beforehand from the defect detection step; sampling defects based on the distribution of the collected defect features over the large number of defects; and setting defect classification conditions based on the result of reviewing the sampled defects.
摘要翻译： 为了在短时间内实现缺陷种类训练，目的在于教导检查薄膜装置的检测缺陷的分类条件，根据本发明的一个方面，提供一种目视检查方法， 因此，包括以下步骤：基于由光学或电子缺陷检测装置获取的检查图像，同时计算缺陷的特征来检测缺陷; 并根据预先设定的分类条件对缺陷进行分类，其中所述分类条件设置步骤还包括以下步骤：从缺陷检测步骤预先获取的大量缺陷中收集缺陷特征; 基于收集的缺陷特征分布在大量缺陷上的采样缺陷; 并根据检查采样缺陷的结果设置缺陷分类条件。
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