公开(公告)号：US09748097B2

公开(公告)日：2017-08-29

申请号：US14780190

申请日：2014-03-26

申请人： Yuki Nakamura ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Yuki Nakamura ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/10 ,  H01L21/02 ,  C09D1/00 ,  H01L29/786 ,  H01L29/66 ,  C09D5/24 ,  H01L29/24

CPC分类号： H01L21/02628 ,  C09D1/00 ,  C09D5/24 ,  H01L21/02565 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.

公开(公告)号：US20150001531A1

公开(公告)日：2015-01-01

申请号：US14312950

申请日：2014-06-24

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。

公开(公告)号：US09112039B2

公开(公告)日：2015-08-18

申请号：US14312950

申请日：2014-06-24

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。

公开(公告)号：US11315961B2

公开(公告)日：2022-04-26

申请号：US16486224

申请日：2018-03-15

申请人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/417

摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

公开(公告)号：US10204799B2

公开(公告)日：2019-02-12

申请号：US15376895

申请日：2016-12-13

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L21/44 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L21/477 ,  H01L29/786

摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

公开(公告)号：US20170162172A1

公开(公告)日：2017-06-08

申请号：US15371500

申请日：2016-12-07

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： G09G5/10 ,  G09G5/00 ,  H01L27/12

CPC分类号： G09G3/3225 ,  G09G5/003 ,  G09G5/10 ,  G09G2300/0426 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3225 ,  H01L29/4908 ,  H01L29/7869

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

公开(公告)号：US10748784B2

公开(公告)日：2020-08-18

申请号：US16047374

申请日：2018-07-27

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L27/12 ,  H01L21/02 ,  H01L21/441 ,  H01L21/4763 ,  H01L29/417 ,  H01L21/3213 ,  H01L29/45 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/32

摘要： A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.

公开(公告)号：US10236304B2

公开(公告)日：2019-03-19

申请号：US15369678

申请日：2016-12-05

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/00 ,  H01L27/12 ,  H01L29/786

摘要： A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

公开(公告)号：US20170170333A1

公开(公告)日：2017-06-15

申请号：US15370253

申请日：2016-12-06

申请人： Shinji MATSUMOTO ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Shinji MATSUMOTO ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L27/12 ,  G09G5/10 ,  H01L29/66

CPC分类号： H01L29/78696 ,  G09G3/3233 ,  G09G3/344 ,  G09G3/3648 ,  G09G3/38 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2251/533

摘要： A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

公开(公告)号：US10818770B2

公开(公告)日：2020-10-27

申请号：US16518265

申请日：2019-07-22

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L27/12 ,  H01L29/51 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  H01L29/786

摘要： Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.