公开(公告)号：US20200075768A1

公开(公告)日：2020-03-05

申请号：US16495361

申请日：2018-03-22

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/861 ,  H01L21/02 ,  C23C22/06 ,  C23C22/82

摘要： A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

公开(公告)号：US20190027608A1

公开(公告)日：2019-01-24

申请号：US16131760

申请日：2018-09-14

申请人： Shinji MATSUMOTO ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Shinji MATSUMOTO ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L27/12 ,  H01L21/02 ,  H01L51/00

摘要： A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solvent; and then removing the solvent to form the second-precursor-layer which is the precursor of the second-oxide-layer.

公开(公告)号：US20170200606A1

公开(公告)日：2017-07-13

申请号：US15401157

申请日：2017-01-09

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L21/02 ,  H01L29/861 ,  G09G5/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24 ,  H01L29/786

CPC分类号： H01L21/02565 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/861 ,  H01L2251/533

摘要： An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO) (ZO)mi(BO) (ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

公开(公告)号：US20170162172A1

公开(公告)日：2017-06-08

申请号：US15371500

申请日：2016-12-07

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： G09G5/10 ,  G09G5/00 ,  H01L27/12

CPC分类号： G09G3/3225 ,  G09G5/003 ,  G09G5/10 ,  G09G2300/0426 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3225 ,  H01L29/4908 ,  H01L29/7869

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

公开(公告)号：US20160279939A1

公开(公告)日：2016-09-29

申请号：US15081307

申请日：2016-03-25

申请人： Sadanori ARAE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Minehide KUSAYANAGI

发明人： Sadanori ARAE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Minehide KUSAYANAGI

IPC分类号： B41J2/14

CPC分类号： B41J2/1433 ,  B41J2/06 ,  B41J2002/14491

摘要： A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

摘要翻译： 一种用于液滴喷射头喷射带电液滴的喷嘴板，包括设置在喷嘴面上的排出口; 填充有从排出口排出的液体的排出室; 喷嘴孔，其从所述排出口沿所述喷嘴板的厚度方向延伸并与所述排出室连通; 设置在所述排出室或所述喷嘴孔中的第一电极并接触所述液滴的一部分; 以及设置在喷嘴面上并且既不连接到第一电极也不与液滴接触的第二电极。

公开(公告)号：US20190288076A1

公开(公告)日：2019-09-19

申请号：US16353872

申请日：2019-03-14

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuichi ANDO ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuichi ANDO ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L29/24 ,  H01L21/02 ,  H01L29/66

摘要： A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.

公开(公告)号：US20190088796A1

公开(公告)日：2019-03-21

申请号：US16183223

申请日：2018-11-07

申请人： Shinji MATSUMOTO ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Shinji MATSUMOTO ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  G09G3/38 ,  G09G3/36 ,  G09G3/34 ,  G09G3/3233 ,  H01L27/32

摘要： A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

公开(公告)号：US20170018650A1

公开(公告)日：2017-01-19

申请号：US15205355

申请日：2016-07-08

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L29/786 ,  H01L29/51 ,  H01L27/12

CPC分类号： H01L29/78606 ,  C23C18/1216 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/7869

摘要： A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer formed between the substrate and the passivation layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first complex oxide containing an alkaline earth metal and a rare-earth element, and wherein the gate insulating layer contains a second complex oxide containing an alkaline earth metal and a rare-earth element.

摘要翻译： 一种场效应晶体管，包括：衬底; 钝化层; 形成在所述基板和所述钝化层之间的栅极绝缘层; 源极电极和漏极电极，其形成为与栅极绝缘层接触; 至少形成在所述源电极和所述漏电极之间并且与所述栅极绝缘层，所述源极电极和所述漏极电极接触的半导体层; 以及与所述栅极绝缘层接触并且经由所述栅极绝缘层面对所述半导体层的栅电极，其中所述钝化层包含含有碱土金属和稀土元素的第一复合氧化物，并且其中所述栅极 绝缘层包含含有碱土金属和稀土元素的第二复合氧化物。

公开(公告)号：US20190280098A1

公开(公告)日：2019-09-12

申请号：US16425446

申请日：2019-05-29

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

IPC分类号： H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  C09D1/00 ,  C09D5/00

摘要： A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.

公开(公告)号：US20190245090A1

公开(公告)日：2019-08-08

申请号：US16318597

申请日：2017-07-14

申请人： Minehide KUSAYANAGI ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE

发明人： Minehide KUSAYANAGI ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.