公开(公告)号：US08183157B2

公开(公告)日：2012-05-22

申请号：US13032492

申请日：2011-02-22

申请人： Naraji B Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

发明人： Naraji B Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

IPC分类号： H01L21/311

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US08026148B2

公开(公告)日：2011-09-27

申请号：US13004967

申请日：2011-01-12

申请人： Niraj B. Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

发明人： Niraj B. Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

IPC分类号： H01L21/20

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US20110111597A1

公开(公告)日：2011-05-12

申请号：US13004967

申请日：2011-01-12

申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/31

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US20100043824A1

公开(公告)日：2010-02-25

申请号：US12195003

申请日：2008-08-20

申请人： Joseph N. Greeley ,  Nishant Sinha ,  Lukasz Hupka ,  Timothy A. Quick ,  Prashant Raghu

发明人： Joseph N. Greeley ,  Nishant Sinha ,  Lukasz Hupka ,  Timothy A. Quick ,  Prashant Raghu

IPC分类号： B08B3/00

CPC分类号： B08B3/08 ,  C11D3/37 ,  C11D7/06 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/67057

摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.

摘要翻译： 本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。 一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液 储存在容器中。 洗涤液包括聚电解质。

公开(公告)号：US20110143543A1

公开(公告)日：2011-06-16

申请号：US13032492

申请日：2011-02-22

申请人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/306

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US07892937B2

公开(公告)日：2011-02-22

申请号：US12252499

申请日：2008-10-16

申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/20

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US08252119B2

公开(公告)日：2012-08-28

申请号：US12195003

申请日：2008-08-20

申请人： Joseph N. Greeley ,  Nishant Sinha ,  Lukasz Hupka ,  Timothy A. Quick ,  Prashant Raghu

发明人： Joseph N. Greeley ,  Nishant Sinha ,  Lukasz Hupka ,  Timothy A. Quick ,  Prashant Raghu

IPC分类号： B08B3/08

CPC分类号： B08B3/08 ,  C11D3/37 ,  C11D7/06 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/67057

摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.

摘要翻译： 本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。 一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液 储存在容器中。 洗涤液包括聚电解质。

公开(公告)号：US20100099232A1

公开(公告)日：2010-04-22

申请号：US12252499

申请日：2008-10-16

申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/02 ,  H01G4/30 ,  H01L21/311

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US20120298158A1

公开(公告)日：2012-11-29

申请号：US13570033

申请日：2012-08-08

申请人： Joseph N. Greeley ,  Nishant Sinha ,  Lukasz Hupka ,  Timothy A. Quick ,  Prashant Raghu

发明人： Joseph N. Greeley ,  Nishant Sinha ,  Lukasz Hupka ,  Timothy A. Quick ,  Prashant Raghu

IPC分类号： B08B3/12 ,  C11D7/60 ,  C11D3/60 ,  B08B3/08

CPC分类号： B08B3/08 ,  C11D3/37 ,  C11D7/06 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/67057

摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.

摘要翻译： 本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。 一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液 储存在容器中。 洗涤液包括聚电解质。

公开(公告)号：US09012318B2

公开(公告)日：2015-04-21

申请号：US13624272

申请日：2012-09-21

申请人： Jerome A. Imonigie ,  Prashant Raghu

发明人： Jerome A. Imonigie ,  Prashant Raghu

IPC分类号： H01L21/336 ,  C09K13/08 ,  H01L21/28 ,  H01L21/3213 ,  H01L27/115

CPC分类号： C09K13/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/28273 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32134 ,  H01L27/11556

摘要： Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.

摘要翻译： 用于蚀刻多晶硅的方法和组合物，包括含有硝酸和氟化铵的含水组合物，以及由此形成的装置。