公开(公告)号：US5929723A

公开(公告)日：1999-07-27

申请号：US836437

申请日：1997-05-07

申请人： Noritoshi Kimura ,  Masahiro Nakano ,  Michiyuki Nakazawa ,  Katsuo Sato

发明人： Noritoshi Kimura ,  Masahiro Nakano ,  Michiyuki Nakazawa ,  Katsuo Sato

IPC分类号： H03H3/08 ,  H03H9/145 ,  H03H9/64

CPC分类号： H03H3/08

摘要： In the electrode of a surface acoustic wave apparatus, the element concentration of copper in the aluminum alloy film is higher in the neighbors of grain boundary than the concentration within the crystal grain, and segregates to the neighbors of crystal grain boundary. In the electrode of this surface acoustic wave apparatus, the concentration of copper existing in the form of copper element, rather than in the form of intermetallic compound of copper and aluminum precipitated to the crystal grain boundary, is higher in the crystal grain boundary than the concentration within the crystal grain, and is in the segregation state. A ratio of a copper concentration in the neighbors of grain boundary to a copper concentration within the crystal grain in an aluminum alloy film forming an electrode of a surface acoustic wave apparatus is greater than 1.6. It is preferable that an electrode formed on a surface of the piezoelectric substrate is made of an aluminum alloy film doped with a copper in a range from 0.5 wt % to 2 wt %.

摘要翻译： PCT No.PCT / JP96 / 02623 Sec。 371日期1997年5月7日 102（e）日期1997年5月7日PCT提交1996年9月13日PCT公布。 公开号WO97 / 11526 日期1997年3月27日在表面声波装置的电极中，铝合金膜中的铜元素浓度在晶界的相邻位置比晶粒内的浓度高，并且分离成晶界的邻近 。 在该声表面波装置的电极中，以铜元素形式存在的铜的浓度，而不是沉淀在晶界的铜和铝的金属间化合物的形式，在晶界上比在 并且处于分离状态。 在形成声表面波装置的电极的铝合金膜中，晶界相邻的铜浓度与晶粒内的铜浓度的比例大于1.6。 形成在压电基板的表面上的电极优选由掺杂有0.5重量％〜2重量％的铜的铝合金膜构成。

公开(公告)号：US06580198B2

公开(公告)日：2003-06-17

申请号：US09871814

申请日：2001-06-04

申请人： Masahiro Nakano ,  Michiyuki Nakazawa ,  Katsuo Sato

发明人： Masahiro Nakano ,  Michiyuki Nakazawa ,  Katsuo Sato

IPC分类号： H01L41083

CPC分类号： B82Y30/00 ,  H03H3/08 ,  H03H9/02622 ,  H03H9/02937

摘要： A surface acoustic wave device includes a piezoelectric substrate having Al or Al alloy electrodes formed on a surface of the substrate, a metal oxide film provided on the substrate and the electrodes. The metal oxide film is formed by a process including depositing a metal thin film having a thickness sufficiently thin so that the deposited metal thin film is discontinuous including voids, and oxidizing the discontinuous metal thin film, and the metal oxide film includes a continuous portion without voids covering the electrodes.

摘要翻译： 声表面波装置包括：在基板的表面上形成有Al或Al合金电极的压电基板，设置在基板上的金属氧化物膜和电极。 金属氧化物膜通过以下工序形成，该方法包括沉积厚度足够薄的金属薄膜，使得沉积的金属薄膜不连续地包括空隙，并且氧化不连续的金属薄膜，并且金属氧化物膜包括没有 覆盖电极的空隙。

公开(公告)号：US06316860B1

公开(公告)日：2001-11-13

申请号：US09317199

申请日：1999-05-24

申请人： Noritoshi Kimura ,  Masahiro Nakano ,  Katsuo Sato

发明人： Noritoshi Kimura ,  Masahiro Nakano ,  Katsuo Sato

IPC分类号： H01L4108

CPC分类号： H03H9/02559

摘要： The surface acoustic wave device of the invention comprises a piezoelectric substrate made up of 64° rotated Y-cut lithium niobate (64LN) or 36° rotated Y-cut lithium tantalate (36LT) and an interdigital electrode formed thereon. The interdigital electrode comprises a titanium buffer metal film and an aluminum film formed thereon. On the 64LN substrate, both the titanium buffer metal film and the aluminum film are converted into a single-crystal film that manifests itself in a spot form alone upon selected-area electron diffraction. By forming the aluminum film on the 36LT substrate with the titanium buffer metal film located therebetween, it is possible to obtain a high-orientation, polycrystalline aluminum film oriented in the (111) direction. The aluminum film is made up of a single-crystal film or a high-orientation polycrystalline film oriented in the (111) direction, whereby migration of aluminum atoms is inhibited, resulting in a power-durability improvement.

摘要翻译： 本发明的声表面波装置包括由64°旋转的Y形铌酸锂（64LN）或36°旋转的Y形切割的钽酸锂（36LT）构成的压电基板和形成在其上的叉指电极。 叉指电极包括钛缓冲金属膜和在其上形成的铝膜。 在64LN衬底上，钛缓冲金属膜和铝膜都被转换为单晶膜，其在选择的面积电子衍射下单独以斑点形式表现出来。 通过在其上设置有钛缓冲金属膜的36LT基板上形成铝膜，可以得到沿（111）方向取向的高取向多晶铝膜。 铝膜由沿（111）方向取向的单晶膜或高取向多晶膜构成，因此铝原子的迁移被抑制，从而提高了电力耐久性。

公开(公告)号：US06407486B1

公开(公告)日：2002-06-18

申请号：US09696281

申请日：2000-10-26

申请人： Noritoshi Kimura ,  Masahiro Nakano ,  Katsuo Sato

发明人： Noritoshi Kimura ,  Masahiro Nakano ,  Katsuo Sato

IPC分类号： H03H925

CPC分类号： H03H3/08 ,  H03H9/02543 ,  H03H9/02559 ,  H03H9/145

摘要： An object of the invention is to provide a SAW device having an electrode film on a lithium tantalate substrate having a cut angle approximate to 36 degree rotated Y cut, the electrode film including an aluminum single crystal film having improved power durability. The SAW device has interdigital electrodes on a substrate. The substrate is constructed of a 38 to 44 degree rotated Y cut lithium tantalate single crystal, each interdigital electrode includes a titanium film and an aluminum film formed thereon, and the aluminum film is a single crystal film which develops only spots on selected area electron diffraction analysis.

摘要翻译： 本发明的目的是提供一种具有在钽酸锂基片上的电极膜的SAW器件，其具有大约36度旋转Y切割的切割角度，该电极膜包括具有改善的功率耐久性的铝单晶膜.SMA器件具有 叉指电极在基底上。 基板由38至44度旋转的Y切割钽酸锂单晶构成，每个叉指电极包括钛膜和形成在其上的铝膜，并且铝膜是仅在所选择的面积电子衍射上形成斑点的单晶膜 分析。

公开(公告)号：US07102461B2

公开(公告)日：2006-09-05

申请号：US10895911

申请日：2004-07-22

申请人： Masahiro Nakano ,  Akira Mashimo ,  Katsuo Sato

发明人： Masahiro Nakano ,  Akira Mashimo ,  Katsuo Sato

IPC分类号： H03H9/72 ,  H03H9/64 ,  H03H3/08

CPC分类号： H03H9/02992 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/16225 ,  H03H3/08 ,  H03H9/02929 ,  H03H9/02984 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1071 ,  H03H9/72 ,  H03H9/725 ,  Y10T29/42 ,  H01L2924/00014

摘要： In a surface acoustic wave element according to an embodiment of this invention, raised electrodes 20 formed on thin film electrodes 18 are provided with throughholes 31. Additionally, bumps 26 arranged on the raised electrodes 20 reach the thin film electrode 18 by going through an oxide film 18a of the thin film electrodes 18 after part of the bumps enters the throughholes 31 of the raised electrodes 20. By doing this, conduction is achieved between the thin film electrodes 18 and the bumps 26 formed on a piezoelectric monocrystal substrate 28. Thus, a solid oxide film 18a is formed on the surface of the thin film electrodes 18 formed from monocrystal aluminum, but part of the bumps 26 which enters the throughholes 31 of the raised electrodes 20 goes through this oxide film 18a, so conduction between the thin film electrode 18 and the bump 26 is achieved with higher accuracy.

摘要翻译： 在根据本发明的实施例的表面声波元件中，形成在薄膜电极18上的凸起电极20设置有通孔31。 此外，在凸起电极20上布置的凸点26通过穿过薄膜电极18的氧化膜18a而到达薄膜电极18，一部分凸块进入凸起电极20的通孔31。 通过这样做，在薄膜电极18和形成在压电单晶基板28上的凸点26之间实现导通。 因此，在由单晶铝形成的薄膜电极18的表面上形成固体氧化物膜18a，但是进入凸起电极20的通孔31的凸块26的一部分穿过该氧化膜18a，因此导通 以更高的精度实现薄膜电极18和凸块26之间的连接。

公开(公告)号：US20060134834A1

公开(公告)日：2006-06-22

申请号：US11333316

申请日：2006-01-18

申请人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

发明人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

IPC分类号： H01L21/48

CPC分类号： H03H9/1071 ,  H01L2224/16225 ,  H01L2224/45144 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/08 ,  H01L2924/00

摘要： A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23. are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 μmRMS Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

摘要翻译： 衬底电极12a的基本部分层21，其在陶瓷的衬底构件上电连接到突出电极13。 对其上形成有碱性部分层21的基材进行烧结。 研磨烧结基板部件中的基体部分层21的表面。 在抛光的基底层21上，形成镀层22,23，使得基板电极12a的表面粗糙度例如可以不大于0.1μm。因此，集成电路元件的结合强度 可以提高通过倒装芯片方法的封装衬底。

公开(公告)号：US07132310B2

公开(公告)日：2006-11-07

申请号：US11333316

申请日：2006-01-18

申请人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

发明人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H03H9/1071 ,  H01L2224/16225 ,  H01L2224/45144 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/08 ,  H01L2924/00

摘要： A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 μmRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

摘要翻译： 衬底电极12a的基本部分层21，其在陶瓷的衬底构件上电连接到突出电极13。 对其上形成有碱性部分层21的基材进行烧结。 研磨烧结基板部件中的基体部分层21的表面。 在抛光的基底层21上形成镀层22,23，使得基板电极12a的表面粗糙度例如可以不大于0.1μmumRMS。 因此，可以提高通过倒装芯片方法安装在封装基板上的集成电路元件的结合强度。

公开(公告)号：US07015556B2

公开(公告)日：2006-03-21

申请号：US10813393

申请日：2004-03-31

申请人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

发明人： Masahiro Nakano ,  Katsuhiko Gunji ,  Yasunobu Oikawa ,  Katsuo Sato

IPC分类号： H01L29/84 ,  H01L22/48

CPC分类号： H03H9/1071 ,  H01L2224/16225 ,  H01L2224/45144 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/08 ,  H01L2924/00

摘要： A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23 are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 μmRMS. Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.

摘要翻译： 衬底电极12a的基本部分层21，其在陶瓷的衬底构件上电连接到突出电极13。 对其上形成有碱性部分层21的基材进行烧结。 研磨烧结基板部件中的基体部分层21的表面。 在抛光的基底层21上形成镀层22,23，使得基板电极12a的表面粗糙度例如可以不大于0.1μmumRMS。 因此，可以提高通过倒装芯片方法安装在封装基板上的集成电路元件的结合强度。

公开(公告)号：US20050030125A1

公开(公告)日：2005-02-10

申请号：US10895911

申请日：2004-07-22

申请人： Masahiro Nakano ,  Akira Mashimo ,  Katsuo Sato

发明人： Masahiro Nakano ,  Akira Mashimo ,  Katsuo Sato

IPC分类号： H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

CPC分类号： H03H9/02992 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/16225 ,  H03H3/08 ,  H03H9/02929 ,  H03H9/02984 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1071 ,  H03H9/72 ,  H03H9/725 ,  Y10T29/42 ,  H01L2924/00014

摘要： In a surface acoustic wave element according to an embodiment of this invention, raised electrodes 20 formed on thin film electrodes 18 are provided with throughholes 31. Additionally, bumps 26 arranged on the raised electrodes 20 reach the thin film electrode 18 by going through an oxide film 18a of the thin film electrodes 18 after part of the bumps enters the throughholes 31 of the raised electrodes 20. By doing this, conduction is achieved between the thin film electrodes 18 and the bumps 26 formed on a piezoelectric monocrystal substrate 28. Thus, a solid oxide film 18a is formed on the surface of the thin film electrodes 18 formed from monocrystal aluminum, but part of the bumps 26 which enters the throughholes 31 of the raised electrodes 20 goes through this oxide film 18a, so conduction between the thin film electrode 18 and the bump 26 is achieved with higher accuracy.

摘要翻译： 在根据本发明的实施例的表面声波元件中，形成在薄膜电极18上的凸起电极20设置有通孔31.另外，布置在凸起电极20上的凸块26通过氧化物到达薄膜电极18 一部分凸块之后的薄膜电极18的薄膜18a进入凸起电极20的通孔31.由此，在薄膜电极18和形成在压电单晶基板28上的凸点26之间实现导通。因此， 在由单晶铝形成的薄膜电极18的表面上形成固体氧化物膜18a，但是进入凸起电极20的通孔31的凸块26的一部分穿过该氧化膜18a，因此薄膜 电极18和凸块26以更高的精度实现。

公开(公告)号：US06946772B2

公开(公告)日：2005-09-20

申请号：US10436438

申请日：2003-05-13

申请人： Kenji Inoue ,  Masahiro Nakano ,  Katsuo Sato

发明人： Kenji Inoue ,  Masahiro Nakano ,  Katsuo Sato

IPC分类号： H03H9/10 ,  H03H9/64 ,  H03H9/72 ,  H03H9/25

CPC分类号： H03H9/6483

摘要： An SAW element 11 comprises a first wiring section 20 formed between an input terminal 18 and an output terminal 19, a plurality of first SAW resonators 15 which are located in serial to the first wiring section 20, a plurality of second SAW resonators 16 which are located in serial to the first wiring section 20 at the side of the input terminal 18 or at the side of the output terminal 19 with respect to the first SAW resonators 15, a plurality of second wiring section 22 which are formed between an intermediate point of the second SAW resonators 16 each other in the first wiring section 20 and a reference voltage electrode 21, and a plurality of third SAW resonators 17 which are located in the second wiring section 22, respectively, and which have anti-resonant frequencies corresponding with resonant frequencies of the second SAW resonators 16.

摘要翻译： SAW元件11包括形成在输入端子18和输出端子19之间的第一布线部分20，与第一布线部分20串联连接的多个第一SAW谐振器15，多个第二SAW谐振器16 位于输入端子18一侧的第一布线部分20处，或者相对于第一SAW谐振器15与输出端子19的一侧串联连接，多个第二布线部分22形成在第一布线部分20的中间点 在第一配线部分20中的第二SAW谐振器16彼此相对的第二SAW谐振器16和参考电压电极21以及分别位于第二配线部分22中的多个第三SAW谐振器17，并且具有对应于共振的反谐振频率 第二SAW谐振器16的频率。