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    RESIST PATTERNING METHOD AND RESIST MATERIAL
    1.
    发明申请
    RESIST PATTERNING METHOD AND RESIST MATERIAL 审中-公开

    公开(公告)号：US20180356731A1

    公开(公告)日：2018-12-13

    申请号：US15779013

    申请日：2016-11-25

    Applicant: OSAKA UNIVERSITY

    Inventor： Seiichi TAGAWA

    IPC: G03F7/11 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  G03F7/09

    CPC classification number: G03F7/11 ,  G03F7/004 ,  G03F7/075 ,  G03F7/094 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40

    Abstract: A resist patterning method includes a resist layer forming step, a patterned exposure step, a flood exposure step, and a developing step. In the resist layer forming step, a resist layer is formed on a substrate. In the patterned exposure step, a sensitizer is produced from a sensitizer precursor in the resist layer. In the flood exposure step, flood exposure is performed on the resist layer in which the sensitizer has been produced to produce an acid from a strong acid generator. In the developing step, the resist layer is developed. The patterned exposure step includes: producing a strong acid from the strong acid generator; producing the sensitizer through a reaction between the strong acid and the sensitizer precursor; producing a weak acid through a reaction between the strong acid and a base; and producing the sensitizer through a reaction between the weak acid and the sensitizer precursor.

    SUBSTRATE TREATMENT SYSTEM
    2.
    发明申请
    SUBSTRATE TREATMENT SYSTEM 有权
    基板处理系统

    公开(公告)号：US20170031245A1

    公开(公告)日：2017-02-02

    申请号：US15106915

    申请日：2014-12-15

    Applicant: Tokyo Electron Limited ,  Osaka University

    Inventor： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Seiichi TAGAWA ,  Akihiro OSHIMA

    IPC: G03F7/20 ,  H01L21/67

    CPC classification number: G03F7/2004 ,  G03F7/20 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67196 ,  H01L21/67225

    Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

    Abstract translation: 一种用于处理基板的基板处理系统，包括：设置有多个处理基板的处理装置的处理台; 接口站，其在设置在基板处理系统之外的曝光装置之间直接或间接地传送基板，并且在基板上的抗蚀剂膜上进行图案的曝光;以及基板处理系统; 执行曝光图案之后，使用UV光对基板上的抗蚀剂膜进行后曝光的光照射装置; 以及容纳光照射装置并且可以减压或惰性气体气氛调节的后曝光站，其中后曝光站通过可调节到减压的空间直接或间接连接到曝光装置，或 惰性气体气氛。

    RESIST PATTERN FORMATION METHOD
    3.
    发明申请
    RESIST PATTERN FORMATION METHOD 有权

    公开(公告)号：US20210216016A1

    公开(公告)日：2021-07-15

    申请号：US17251722

    申请日：2019-06-14

    Applicant: OSAKA UNIVERSITY

    Inventor： Seiichi TAGAWA

    IPC: G03F7/38

    Abstract: A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1

    RESIST PATTERNING METHOD, LATENT RESIST IMAGE FORMING DEVICE, RESIST PATTERNING DEVICE, AND RESIST MATERIAL
    5.
    发明申请
    RESIST PATTERNING METHOD, LATENT RESIST IMAGE FORMING DEVICE, RESIST PATTERNING DEVICE, AND RESIST MATERIAL 有权
    电阻图案形成装置，电阻图案装置和电阻材料

    公开(公告)号：US20160004160A1

    公开(公告)日：2016-01-07

    申请号：US14769410

    申请日：2014-02-20

    Applicant: OSAKA UNIVERSITY

    Inventor： Seiichi TAGAWA ,  Akihiro OSHIMA

    IPC: G03F7/20 ,  G03F7/32

    CPC classification number: G03F7/2022 ,  G03F7/203 ,  G03F7/2032 ,  G03F7/32 ,  G03F7/38

    Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer 12 on a substrate 11; an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.

    Abstract translation: 根据本发明的抗蚀剂图案化方法包括：在基板11上形成抗蚀剂层12的抗蚀剂层形成步骤S101; 激活步骤S103，通过激活能量束的照射激活抗蚀剂层; 衰减抑制步骤S105，其抑制抗蚀剂层的活性的衰减; 通过照射潜像形成能量束在活性抗蚀剂层中形成潜像图形图像的潜像图形形成步骤S107; 以及显影步骤S110，使抗蚀剂层显影。

    PATTERN-FORMING METHOD
    7.
    发明申请
    PATTERN-FORMING METHOD 有权
    图案形成方法

    公开(公告)号：US20170052450A1

    公开(公告)日：2017-02-23

    申请号：US15241315

    申请日：2016-08-19

    Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

    Inventor： Hisashi NAKAGAWA ,  Takehiko NARUOKA ,  Tomoki NAGAI ,  Seiichi TAGAWA ,  Akihiro OSHIMA ,  Seiji NAGAHARA

    IPC: G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/16 ,  G03F7/38

    CPC classification number: G03F7/2022 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/2032 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

    Abstract: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

    Abstract translation: 图案形成方法包括在形成在基板上的抗反射膜上施加化学放大的抗蚀剂材料以形成抗蚀剂材料膜。 抗蚀剂材料膜图案地暴露于波长不大于400nm的电离辐射或非离子化辐射。 图案曝光的抗蚀剂材料膜被洪泛地暴露于波长大于用于图案曝光的非离子化辐射的波长的大于200nm的非离子化辐射。 烘烤曝光的抗蚀剂材料膜。 用显影剂溶液显影烘烤的抗蚀剂材料膜。 用于液体曝光的非离子辐射防反射膜的消光系数不小于0.1。 化学放大抗蚀剂材料包括能够在曝光时产生辐射敏感敏化剂和酸的基础成分和生成成分。

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