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    PATTERN-FORMING METHOD
    1.
    发明申请
    PATTERN-FORMING METHOD 有权
    图案形成方法

    公开(公告)号：US20170052450A1

    公开(公告)日：2017-02-23

    申请号：US15241315

    申请日：2016-08-19

    申请人： OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

    发明人： Hisashi NAKAGAWA ,  Takehiko NARUOKA ,  Tomoki NAGAI ,  Seiichi TAGAWA ,  Akihiro OSHIMA ,  Seiji NAGAHARA

    IPC分类号： G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/16 ,  G03F7/38

    CPC分类号： G03F7/2022 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/2032 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

    摘要： A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

    摘要翻译： 图案形成方法包括在形成在基板上的抗反射膜上施加化学放大的抗蚀剂材料以形成抗蚀剂材料膜。 抗蚀剂材料膜图案地暴露于波长不大于400nm的电离辐射或非离子化辐射。 图案曝光的抗蚀剂材料膜被洪泛地暴露于波长大于用于图案曝光的非离子化辐射的波长的大于200nm的非离子化辐射。 烘烤曝光的抗蚀剂材料膜。 用显影剂溶液显影烘烤的抗蚀剂材料膜。 用于液体曝光的非离子辐射防反射膜的消光系数不小于0.1。 化学放大抗蚀剂材料包括能够在曝光时产生辐射敏感敏化剂和酸的基础成分和生成成分。

    SUBSTRATE TREATMENT SYSTEM
    2.
    发明申请
    SUBSTRATE TREATMENT SYSTEM 有权
    基板处理系统

    公开(公告)号：US20170031245A1

    公开(公告)日：2017-02-02

    申请号：US15106915

    申请日：2014-12-15

    申请人： Tokyo Electron Limited ,  Osaka University

    发明人： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Seiichi TAGAWA ,  Akihiro OSHIMA

    IPC分类号： G03F7/20 ,  H01L21/67

    CPC分类号： G03F7/2004 ,  G03F7/20 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67196 ,  H01L21/67225

    摘要： A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

    摘要翻译： 一种用于处理基板的基板处理系统，包括：设置有多个处理基板的处理装置的处理台; 接口站，其在设置在基板处理系统之外的曝光装置之间直接或间接地传送基板，并且在基板上的抗蚀剂膜上进行图案的曝光;以及基板处理系统; 执行曝光图案之后，使用UV光对基板上的抗蚀剂膜进行后曝光的光照射装置; 以及容纳光照射装置并且可以减压或惰性气体气氛调节的后曝光站，其中后曝光站通过可调节到减压的空间直接或间接连接到曝光装置，或 惰性气体气氛。

    OPTICAL PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
    4.
    发明申请
    OPTICAL PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20180164696A1

    公开(公告)日：2018-06-14

    申请号：US15828906

    申请日：2017-12-01

    申请人： Tokyo Electron Limited

    发明人： Teruhiko MORIYA ,  Masaru TOMONO ,  Ryo SHIMADA ,  Makoto HAYAKAWA ,  Seiji NAGAHARA

    IPC分类号： G03F7/20

    摘要： An optical processing apparatus includes: a housing; a stage; and a light irradiation unit configured to cause a light source unit to emit light so as to form a strip-like irradiation area extending over an area wider than a width of a substrate in a right and left direction. The stage and the light irradiation unit are moved by a moving mechanism relatively to each other in a back and forth direction. Light emitted from the light irradiation unit is deviated by a light-path changing unit from a relative movement area of a substrate. When a substrate is relatively moved below the light irradiation unit without the intension of being subjected to a light irradiation process, a control unit outputs a control signal such that an irradiation area is not formed on a surface of the substrate by the light-path changing unit, while the light source unit emitting light.

    EXPOSURE APPARATUS, RESIST PATTERN FORMING METHOD, AND STORAGE MEDIUM
    5.
    发明申请
    EXPOSURE APPARATUS, RESIST PATTERN FORMING METHOD, AND STORAGE MEDIUM 审中-公开
    曝光装置，电阻图案形成方法和存储介质

    公开(公告)号：US20160327869A1

    公开(公告)日：2016-11-10

    申请号：US15109917

    申请日：2015-01-13

    申请人： TOKYO ELECTRON LIMITED

    发明人： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Yuichi TERASHITA ,  Hironori MIZOGUCHI

    IPC分类号： G03F7/20

    CPC分类号： G03F7/7055 ,  G03F7/2022 ,  G03F7/70558

    摘要： A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

    摘要翻译： 在晶片上形成抗蚀剂图案的技术可以实现图案线宽度的高分辨率和高平面均匀性。 在晶片W上形成抗蚀剂膜，然后通过图案曝光装置进行图案曝光，通过使用淹光曝光装置曝光整个图案曝光区域。 在曝光期间，根据先前从检查装置获得的抗蚀剂图案的线宽的面内分布的信息，根据晶片上的曝光位置来调节曝光量。 用于调节曝光量的方法包括在移动对应于晶片直径的条形照射区域的同时调节曝光量的方法，涉及间歇地移动照射区域的方法，对应于先前图案曝光中的照射区域 ，调整每个芯片的曝光量。