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    Sensor for measuring large mechanical strains with fine adjustment device
    2.
    发明授权
    Sensor for measuring large mechanical strains with fine adjustment device 有权
    用于测量具有精细调节装置的大型机械应变的传感器

    公开(公告)号：US08627727B2

    公开(公告)日：2014-01-14

    申请号：US12839401

    申请日：2010-07-19

    Applicant: Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

    Inventor： Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

    IPC: G01B7/16 ,  G01L1/00 ,  B64C25/00

    CPC classification number: G01L1/142 ,  B64D2045/008 ,  G01B7/22 ,  G01L5/0052

    Abstract: A capacitive strain sensor for sensing strain of a structure. The sensor includes a first section attached to the structure at a first location and a second section attached to the structure at a second location. The first section includes a capacitor plate electrically isolated from the structure and the second section includes two electrically isolated capacitive plates, both of the plates being electrically isolated from the structure. A flexible connector connects the first section to the second section. The capacitor plate of the first section is separated from the two capacitive plates of the second section by at least one capacitive gap. When strain is experienced by the structure, a change occurs in the capacitive gap due to relative motion between the first and second sections.

    Abstract translation: 一种用于感测结构应变的电容式应变传感器。 传感器包括在第一位置处附接到结构的第一部分和在第二位置附接到结构的第二部分。 第一部分包括与该结构电隔离的电容器板，并且第二部分包括两个电隔离的电容板，两个板与结构电隔离。 柔性连接器将第一部分连接到第二部分。 第一部分的电容器板通过至少一个电容间隙与第二部分的两个电容板分开。 当结构经受应变时，由于第一和第二部分之间的相对运动，在电容间隙中发生变化。

    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    3.
    发明申请
    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR 有权
    耐高温固体压力传感器

    公开(公告)号：US20100155866A1

    公开(公告)日：2010-06-24

    申请号：US12579123

    申请日：2009-10-14

    Applicant: Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    Inventor： Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    IPC: H01L29/84 ,  H01L21/30

    CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

    Abstract translation: 一种恶劣环境换能器，包括具有第一表面和第二表面的基底，其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底，使得衬底的第一表面基本上与环境隔离，并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线，使得传感器装置的输出可以被传送。 导线的外表面基本上是铂，并且输出触点和连接部件中的至少一个的外表面基本上是铂。

    Method of manufacture of a semiconductor structure
    5.
    发明授权
    Method of manufacture of a semiconductor structure 失效
    半导体结构的制造方法

    公开(公告)号：US06773951B2

    公开(公告)日：2004-08-10

    申请号：US10278611

    申请日：2002-10-23

    Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo

    Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo

    IPC: H01L2100

    CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

    Abstract: A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.

    Abstract translation: 制备半导体结构的方法包括：（a）提供第一材料，其包括（i）包含硅的第一晶片，（ii）通过将硅的一部分转化为SiC而获得的至少一个SiC转换层，（iii） 至少一层非原生SiC施加到转化层，和（iv）施加到非本征SiC层的至少一个氧化物层;（b）在非本征SiC层的区域中注入离子，从而建立 其中限定非本地SiC层的第一部分和非本征SiC层的第二部分的植入区域;（c）提供至少一种附加材料，其包括（i）包含硅的第二晶片和（ii） ）施加到所述第二晶片的表面的氧化物层;（d）将所述第一材料的氧化物层和所述材料的氧化物层粘合以提供所述第一材料和第二材料的组合; 和（e）在植入区域处分离非本地SiC层的第二部分与非本征SiC层的第一部分以提供。 所得的半导体结构包括可以是Si晶片的基底晶片，可以与基底晶片相邻的SiO 2的绝缘氧化物层和非本征SiC的有源顶层。 半导体结构可用于制造集成的电子设备，压力传感器，温度传感器或其他可用于诸如飞机发动机的高温环境中的仪器。

    Method of preparing a semiconductor using ion implantation in a SiC layer
    6.
    发明授权
    Method of preparing a semiconductor using ion implantation in a SiC layer 失效
    在SiC层中使用离子注入制备半导体的方法

    公开(公告)号：US06566158B2

    公开(公告)日：2003-05-20

    申请号：US09932001

    申请日：2001-08-17

    Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo

    Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo

    IPC: H01L2100

    CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

    Abstract: A method of preparing a semiconductor using ion implantation comprises: (a) providing a first material comprising (i) a first Si wafer, (ii) at least one indigenous SiC layer, (iii) at least one non-indigenous SiC layer applied to the indigenous SiC layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in the non-indigenous SiC layer, thereby establishing an implant region which defines first and second portions of the non-indigenous SiC layer; (c) providing another material comprising (i) a second Si wafer, and (ii) an oxide layer applied to a face of the second wafer; (d) providing an assembly by bonding the oxide layers of the first material and the other material; and (e) separating the first and second portions of the non-indigenous SiC layer at the implant region.

    Abstract translation: 使用离子注入制备半导体的方法包括：（a）提供第一材料，其包括（i）第一Si晶片，（ii）至少一个本征SiC层，（iii）至少一个非本征SiC层施加到 本地SiC层，和（iv）施加到非本征SiC层的至少一个氧化物层;（b）在非本征SiC层中注入离子，由此建立植入区域，其限定非本征SiC层的第一和第二部分， - 本土SiC层;（c）提供另外的材料，其包括（i）第二硅晶片，和（ii）施加到所述第二晶片的表面的氧化物层;（d）通过将所述第一晶片的氧化物层 材料和其他材料; 和（e）在植入区域处分离非本征SiC层的第一和第二部分。

    METHOD FOR MAKING A TRANSDUCER
    9.
    发明申请
    METHOD FOR MAKING A TRANSDUCER 有权
    制造传感器的方法

    公开(公告)号：US20090203163A1

    公开(公告)日：2009-08-13

    申请号：US12426310

    申请日：2009-04-20

    Applicant: Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

    Inventor： Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

    IPC: H01L21/50 ,  H01L29/84

    CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.

    Abstract translation: 一种用于形成换能器的方法，包括提供绝缘体上半导体晶片的步骤，该晶片包括由电绝缘层分隔的第一和第二半导体层。 该方法还包括在晶片上沉积或生长压电薄膜或压阻薄膜，在压电或压阻薄膜上沉积或生长导电材料以形成至少一个电极，以及沉积或生长包括电连接部分的粘合层， 位于电极上或与电极电耦合。 该方法还包括提供具有位于其上的结合层的陶瓷基板的步骤，所述接合层包括电连接部分并且以通常匹配绝缘体上半导体晶片的结合层的方式被图案化。 该方法还包括使绝缘体上半导体晶片的接合层和衬底的接合层接合在一起，从而机械地和电耦合绝缘体上半导体晶片和衬底以形成换能器，其中电气 绝缘体上半导体晶片和衬底的结合层的连接部分通过结合层与周围环境流体隔离。

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