Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    4.
    发明授权
    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
    在N位/单元模拟存储单元器件中以M位/单元密度存储,M> N

    公开(公告)号:US08208304B2

    公开(公告)日:2012-06-26

    申请号:US12618732

    申请日:2009-11-15

    IPC分类号: G11C16/04

    摘要: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    摘要翻译: 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据,并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    Efficient re-read operations from memory devices
    7.
    发明授权
    Efficient re-read operations from memory devices 有权
    从存储器设备高效重新读取操作

    公开(公告)号:US08225181B2

    公开(公告)日:2012-07-17

    申请号:US12323544

    申请日:2008-11-26

    摘要: A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

    摘要翻译: 一种用于数据存储的方法包括通过将相应的第一存储值写入组中的存储器单元来将经错误校正码(ECC)编码的数据存储在一组模拟存储器单元中。 在存储数据之后,从组中的存储器单元读取相应的第二存储值,并且处理读取的第二存储值以便对ECC进行解码。 响应于对ECC的解码失败,可​​能导致故障的一个或多个第二存储值被识别为可疑存储值。 从包含存储可疑存储值的存储单元的存储器单元的子集重新读取相应的第三存储值。 使用第三存储值对ECC进行重新解码,以重建存储的数据。

    MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS
    8.
    发明申请
    MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS 有权
    具有多个精度读取命令的存储器件

    公开(公告)号:US20090240872A1

    公开(公告)日:2009-09-24

    申请号:US12405275

    申请日:2009-03-17

    IPC分类号: G06F12/00 G06F12/02 G11C11/34

    摘要: A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.

    摘要翻译: 一种用于数据存储的方法包括至少定义用于从模拟存储器单元读取存储值的第一和第二读取命令。 第一读取命令以第一精度读取存储值,并且第二读取命令以比第一精度更精细的第二精度读取存储值。 针对要在特定组的存储单元上执行的读取操作来评估条件。 响应于评估条件选择第一和第二读取命令中的一个。 使用所选择的读取命令从存储器单元的给定组中读取存储值。

    EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS
    9.
    发明申请
    EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS 有权
    在模拟存储器单元阵列中有效地重新读取操作

    公开(公告)号:US20120254696A1

    公开(公告)日:2012-10-04

    申请号:US13523352

    申请日:2012-06-14

    IPC分类号: H03M13/05 G06F11/10

    摘要: A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

    摘要翻译: 一种用于数据存储的方法包括通过将相应的第一存储值写入组中的存储器单元来将经错误校正码(ECC)编码的数据存储在一组模拟存储器单元中。 在存储数据之后,从组中的存储器单元读取相应的第二存储值,并且处理读取的第二存储值以便对ECC进行解码。 响应于对ECC的解码失败,可​​能导致故障的一个或多个第二存储值被识别为可疑存储值。 从包含存储可疑存储值的存储单元的存储器单元的子集重新读取相应的第三存储值。 使用第三存储值对ECC进行重新解码,以重建存储的数据。

    Selective activation of programming schemes in analog memory cell arrays
    10.
    发明授权
    Selective activation of programming schemes in analog memory cell arrays 有权
    在模拟存储单元阵列中选择性地激活编程方案

    公开(公告)号:US08228701B2

    公开(公告)日:2012-07-24

    申请号:US12714501

    申请日:2010-02-28

    IPC分类号: G11C27/00

    摘要: A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

    摘要翻译: 一种用于数据存储的方法包括:定义第一编程方案,其编程一组模拟存储器单元,同时减少由与该组相邻的至少一个存储器单元引起的干扰;以及第二编程方案,其对该组模拟存储器单元进行编程 不能减少第一编程方案减少的所有干扰。 基于针对模拟存储器单元定义的标准来选择第一和第二编程方案之一。 使用所选择的编程方案将数据存储在模拟存储器单元的组中。