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    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    2.
    发明授权
    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
    在N位/单元模拟存储单元器件中以M位/单元密度存储，M> N

    公开(公告)号：US08208304B2

    公开(公告)日：2012-06-26

    申请号：US12618732

    申请日：2009-11-15

    申请人： Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

    发明人： Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

    IPC分类号： G11C16/04

    CPC分类号： G06F11/1068 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C27/005 ,  G11C2211/5641

    摘要： A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    摘要翻译： 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据，并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS
    4.
    发明申请
    EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS 有权

    公开(公告)号：US20120272122A1

    公开(公告)日：2012-10-25

    申请号：US13523421

    申请日：2012-06-14

    申请人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

    发明人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

    IPC分类号： H03M13/05 ,  G06F11/10

    CPC分类号： G06F11/10 ,  G06F11/1008 ,  G06F11/1068 ,  G11C2029/0411 ,  H03M13/00 ,  H03M13/3761

    摘要： A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

    Programming of analog memory cells using a single programming pulse per state transition
    6.
    发明授权
    Programming of analog memory cells using a single programming pulse per state transition 有权
    使用每个状态转换的单个编程脉冲对模拟存储器单元进行编程

    公开(公告)号：US07924587B2

    公开(公告)日：2011-04-12

    申请号：US12388528

    申请日：2009-02-19

    申请人： Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

    发明人： Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

    IPC分类号： G11C27/00

    CPC分类号： G11C11/5628 ,  G11C27/005 ,  G11C29/00

    摘要： A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.

    摘要翻译： 一种用于在模拟存储单元中进行数据存储的方法包括定义用于在模拟存储器单元中存储数据的多个编程状态。 编程状态表示多于一个位的相应组合，并且对应于存储在存储器单元中的物理量的相应不同级别。 通过向存储器单元施加编程脉冲将数据存储在存储器单元中，编程脉冲使存储单元中存储的物理量的电平在编程状态之间转变，使得给定的转换仅由单个编程脉冲引起。

    Efficient re-read operations from memory devices
    10.
    发明授权
    Efficient re-read operations from memory devices 有权
    从存储器设备高效重新读取操作

    公开(公告)号：US08225181B2

    公开(公告)日：2012-07-17

    申请号：US12323544

    申请日：2008-11-26

    申请人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

    发明人： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

    IPC分类号： G11C29/00 ,  G08C25/02 ,  H04L1/18 ,  H03M13/00

    CPC分类号： G06F11/10 ,  G06F11/1008 ,  G06F11/1068 ,  G11C2029/0411 ,  H03M13/00 ,  H03M13/3761

    摘要： A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

    摘要翻译： 一种用于数据存储的方法包括通过将相应的第一存储值写入组中的存储器单元来将经错误校正码（ECC）编码的数据存储在一组模拟存储器单元中。 在存储数据之后，从组中的存储器单元读取相应的第二存储值，并且处理读取的第二存储值以便对ECC进行解码。 响应于对ECC的解码失败，可​​能导致故障的一个或多个第二存储值被识别为可疑存储值。 从包含存储可疑存储值的存储单元的存储器单元的子集重新读取相应的第三存储值。 使用第三存储值对ECC进行重新解码，以重建存储的数据。